PIN Photodiodes PNZ330CL (PN330CL) Silicon planar type Unit: mm +0.2 φ5.35 -0.1 +0.1 For optical control systems 12.7 min. • TO-18 standard type package • High coupling capabillity suitable for plastic fiber • High quantum efficiency • High-speed response 0.2±0.05 ■ Features 2.0±0.1 3.0±0.3 φ4.2 -0.2 2-φ0.45±0.05 15 0± 1. Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 3° Symbol 0. Ta = 25°C ± 45° Parameter 5 .1 +0 0.1 01. ■ Absolute Maximum Ratings 2 1 1: Anode 2: Cathode MTRLR102-001 Package 2.54±0.2 ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Dark current ID VR = 10 V Photocurrent *1 IL VR = 10 V, L = 1 000 lx Peak emission wavelength λp VR = 10 V Rise time *2 tr VR = 10 V, RL = 50 Ω Min 7 Typ Max 0.1 10.0 Unit nA 10 µA 850 nm 2 ns *2 tf 2 ns Terminal capacitance Ct VR = 0 V, f = 1 MHz 7 pF Half-power angle θ The angle from which photocurrent becomes 50% 70 ° Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VR (Input pulse) 90% 10% Sig. out 50 Ω RL (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00039BED 1 PNZ330CL IL L IL V R 103 Ta = 25°C 102 12 10 1 VR = 10 V L = 1 000 lx 12 Photocurrent IL (µA) Photocurrent IL (µA) Photocurrent IL (µA) IL Ta 16 16 VR = 10 V Ta = 25°C L = 1 000 lx 8 L = 500 lx 8 4 4 10−1 1 10 102 103 0 104 0 Illuminance L (lx) 10 20 10−1 10−2 0 40 100 10 1 Ambient temperature Ta (°C) 60 40 20 10−1 1 60 40 20 0 200 10 70° 80° 90° 1 000 800 Z = 0 mm 1 1 2 3 Fiber Y 4 0 0.4 0.8 1.2 Distance Z (mm) SHE00039BED Z = 0.3 mm 2 3 X 1.6 Fiber Y 4 Z φ1 mm X 5 1 200 0 X, Y = 0 mm 50° 60° 600 Coupling loss characteristics 0 40° 400 Wavelength λ (nm) Coupling loss characteristics 30° Coupling loss LZ (dB) 80 Relative sensitivity ∆S (%) 100 20° 100 VR = 10 V Ta = 25°C Load resistance RL (kΩ) Directivity characteristics 0° 10° 60 80 102 10−1 −2 10 80 20 Spectral sensitivity characteristics Relative sensitivity ∆S (%) Rise time tr , Fall time tf (ns) Dark current ID (nA) 1 −20 Ambient temperature Ta (°C) tr , tf RL 10 2 0 −60 50 103 VR = 10 V 10−3 −40 40 Reverse voltage VR (V) ID T a 102 30 Coupling loss LX , LY (dB) 10−2 5 − 0.8 − 0.4 0 Z φ1 mm 0.4 Distance X, Y (mm) 0.8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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