Transistors SMD Type NPN Silicon Epitaxia 2SC4332-Z TO-252 Features 6.50 +0.2 5.30-0.2 Low collector saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High DC current gain. +0.15 5.55 -0.15 Fast switching speed. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 5 A Collector current (pulse) * ICP 10 A Base current IB 2.5 A Total power dissipation PT 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10 ms, duty cycle 50% www.kexin.com.cn 1 Transistors SMD Type 2SC4332-Z Electrical Characteristics Ta = 25 Parameter Symbol Collector to Emitter Voltage Collector to Emitter Voltage Collector Cut-off Current Testconditons Typ Max Unit VCEO(SUS) IC = 3.0 A, IB = 0.3 A, L = 1 mH 60 V VCEX(SUS) IC = 3.0 A, IB1 = -IB2 = 0.3 A,VBE(OFF) = -1.5 V, L = 180 ìH, 60 V ICBO VCE = 60 V, IE = 0 10 ìA Collector Cut-off Current ICER VCE = 60 V, RBE = 51Ù, TA = 125°C 1.0 mA Collector Cut-off Current ICEX1 VCE = 60 V, VBE(OFF) = -1.5 V 10 ìA Collector Cut-off Current ICEX2 VCE = 60 V, VBE(OFF) = -1.5 V,TA = 125 1.0 mA Emitter Cut-off Current IEBO VEB = 5.0 V, IC = 0 10 ìA DC Current Gain hFE1 VCE = 2.0 V, IC = 0.5 A 100 DC Current Gain hFE2 VCE = 2.0 V, IC = 1.0 A 100 60 DC Current Gain 400 hFE3 VCE = 2.0 V, IC = 3.0 A Collector Saturation Voltage VCE(sat)1 IC = 3.0 A, IB = 0.15 A 0.3 V Collector Saturation Voltage VCE(sat)2 IC = 4.0 A, IB = 0.2 A 0.5 V Base Saturation Voltage VBE(sat)1 IC = 3.0 A, IB = 0.15 A 1.2 V Base Saturation Voltage VBE(sat)2 IC = 4.0 A, IB = 0.2 A 1.5 V Collector Capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 130 150 pF Gain Bandwidth Product fT VCE = 10 V, IE = -0.5 A Turn-on Time ton IC = 3.0 A, RL = 16.7Ù, 0.3 ìs Storage Time tstg IB1 = -IB2 = 0.15 A, VCC =50 V 1.5 ìs 0.3 ìs Fall Time tf hFE Classification 2 Min Marking M L hFE 100 200 150 300 www.kexin.com.cn K 200 400 MHz