UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54Ω Features Description • RDS(on) = 0.42Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 30nC) • Low Crss ( Typ. 14.5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G D S TO-220 FDP Series GD S TO-220F FDPF Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) FDP13N50F FDPF13N50FT 500 Units V ±30 V 12 12* 7.2 7.2* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC 48* A 684 (Note 3) (TC = 25oC) PD TL 48 A mJ 4.5 V/ns 195 42 W 1.53 0.33 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP13N50F FDPF13N50FT RθJC Thermal Resistance, Junction to Case 0.65 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2007 Fairchild Semiconductor Corporation FDP13N50F / FDPF13N50FT Rev. A 1 Units o C/W www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET September 2007 Device Marking FDP13N50F Device FDP13N50F Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF13N50FT FDPF13N50FT TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V ID = 250µA, Referenced to 25oC - 0.7 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±20V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.42 0.54 Ω - 13.3 - S µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 6A gFS Forward Transconductance VDS = 20V, ID = 6A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 13A VGS = 10V (Note 4, 5) - 1450 1930 pF - 198 265 pF - 14.5 22 pF - 30 39 nC - 8 - nC - 12 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 13A RG = 25Ω (Note 4, 5) - 28 65 ns - 54 120 ns - 75 160 ns - 47 105 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 12 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 12A - - 1.5 V trr Reverse Recovery Time - 154 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 12A dIF/dt = 100A/µs - 0.45 - µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP13N50F / FDPF13N50FT Rev. 2 www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 50 *Notes: 1. VDS = 20V 2. 250µs Pulse Test 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] 30 V = 15.0 V GS 10 o 150 C o 25 C *Notes: 1. 250µs Pulse Test o 1 2. TC = 25 C 1 10 VDS,Drain-Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS,Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.8 0.7 0.6 VGS = 10V 0.5 VGS = 20V 0.4 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.3 *Note: TJ = 25 C 0 10 20 30 ID, Drain Current [A] 1 0.0 40 Figure 5. Capacitance Characteristics Ciss *Note: 1. VGS = 0V 2. f = 1MHz 1500 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] FDP13N50F / FDPF13N50FT Rev. 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V] 2.5 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Coss 2. 250µs Pulse Test Figure 6. Gate Charge Characteristics 3000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.9 RDS(ON) [Ω], Drain-Source On-Resistance 3 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V 8 *Note: ID = 13A 0 5 10 15 20 25 Qg, Total Gate Charge [nC] 30 www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDPF13N50FT 100 30µs 100µs ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] DC 1. TC = 25 C o 0.01 200 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current vs. Case Temperature 14 ID, Drain Current [A] 12 10 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDPF13N50FT Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 0.1 t1 0.02 t2 *Notes: 0.01 o 1. ZθJC(t) = 3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -4 10 FDP13N50F / FDPF13N50FT Rev. PDM 0.05 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 4 2 10 3 10 www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP13N50F / FDPF13N50FT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP13N50F / FDPF13N50FT Rev. 5 www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP13N50F / FDPF13N50FT Rev. 6 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 FDP13N50F / FDPF13N50FT Rev. 7 www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET Mechanical Dimensions FDP13N50F / FDPF13N50FT N-Channel MOSFET Mechanical Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP13N50F / FDPF13N50FT Rev. 8 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDP13N50F / FDPF13N50FT Rev. 9 www.fairchildsemi.com FDP13N50F / FDPF13N50FT N-Channel MOSFET TRADEMARKS