PIN Photodiodes PNZ312D Dual Division Silicon PIN Photodiode Unit : mm 1.0±0.2 ø3.2 Dep. 0.1(typ.) 10˚ 1.0±0.1 For optical information systems Features 1.8±0.3 5.0±0.1 2.54±0.1 4 3 Low dark current : ID = 20 nA (max.) Small size plastic package (flat type) B A 1.0 Good photo current linearity 10˚ 13.5±1.0 4.0±0.1 1.0±0.3 Fast response : tr, tf = 10 ns (typ.) 1.0 4-0.6 +0.1 –0.2 0.2 +0.1 –0.05 Adoption of visible light cutoff resin 4-0.5±0.1 1 10˚ 0.6 2 10˚ 0.2 Applications 5˚ Auto focus sensor for still cameras and video cameras etc. 5˚ 1: Anode A 2: Common Cathode 3: Anode B 4: Common Cathode Distance measuring systems Position sensor for automatic assembly lines Note) The PNZ312D package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Eye sensor for industrial robots Dimensions of detection area Parameter Reverse voltage (DC) Symbol Ratings Unit VR 30 V Power dissipation PD 30 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Unit : mm 3.5 1.6 1.6 0.04 A B 1.35 1.0 Absolute Maximum Ratings (Ta = 25˚C) Electro-Optical Characteristics (Ta = 25˚C) Parameter Reverse voltage (DC) Symbol Conditions VR IR = 10µA Dark current ID VR = 10V Photo current IL*3 VR = 10V, L = 1000 lx*1 λP Peak sensitivity wavelength min typ max Unit 30 V 20 8 nA 12 µA VR = 10V 940 nm tr, tf*2 VR = 10V, RL = 1kΩ 10 ns Capacitance between pins Ct VR = 10V, f = 1MHz 5 pF Acceptance half angle θ Measured from the optical axis to the half power point 65 deg. Response time Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values corresponding to individual elements. *1 Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source. *2 Semiconductor laser light source ( λ = 800 nm ) *3 Photo current measurement circuit +10V R1 = R2 R2 ,, ,,, R1 1 PNZ312D PIN Photodiodes IL — L 20 10 IL — Ta 160 VR = 10V Ta = 25˚C T = 2856K VR = 10V L = 1000 lx T = 2856K IL (%) 140 Relative photo current 30 10 2 IL (µA) 10 3 Photo current Power dissipation PD (mW) PD — Ta 40 10 1 120 100 80 60 40 20 0 – 25 0 20 40 60 Ambient temperature 80 10 –1 10 100 10 2 Ta (˚C ) 10 –1 20 40 60 80 100 Ta (˚C ) Spectral sensitivity characteristics 100 VR = 10V 1 Relative sensitivity Dark current ID (nA) Ta = 25˚C 0 Ambient temperature S (%) 10 ID (nA) Dark current 0 – 40 – 20 10 4 L (lx) ID — Ta ID — VR 1 10 3 Illuminance 10 –1 VR = 10V Ta = 25˚C 80 60 40 20 4 8 12 16 Reverse voltage 20 24 28 10 –2 – 40 – 20 32 VR (V) 60 60 40 20 80 40 0 40 Angle θ (deg.) 80 0 200 100 400 800 10 4 f = 1MHz Ta = 25˚C Sig.IN 10 1 1 Reverse voltage 1000 1200 tr , tf — RL 10 2 10 –1 10 –1 600 Wavelength λ (nm) VR=10V Sig. OUT RL ,, , Ct (pF) 80 80 Ta (˚C ) 10 3 Capacitance between pins S (%) Relative sensitivity 40 Ct — VR Directivity characteristics 2 20 Ambient temperature 100 0 0 tr , tf (ns) 0 Rise time, Fall time 10 –2 10 VR (V) 10 2 10 3 50Ω tr 90% 10% td tf 10 2 10 1 10 –1 Ta = 25˚C 1 10 External load resistance 10 2 RL (kΩ)