VISHAY LS4151_12

LS4151
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon epitaxial planar diode
• Electrical data identical with the device
1N4151
• QuadroMELF package
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
9612009
Applications
• Extreme fast switches
Mechanical Data
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
LS4151
Ordering code
Type marking
Remarks
LS4151-GS18 or LS4151-GS08
-
Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward continuous current
VR = 0
Average forward current
Power dissipation
Symbol
Value
Unit
VRRM
75
V
VR
50
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
Ptot
500
mW
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Tj
175
°C
Tstg
- 65 to + 175
°C
Junction temperature
Storage temperature range
Document Number 85563
Rev. 1.7, 20-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
LS4151
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
IF = 50 mA
VF
VR = 50 V
IR
50
nA
VR = 50 V, Tj = 150 °C
IR
50
μA
Breakdown voltage
IR = 5 μA, tp/T = 0.01, tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
2
pF
IF = IR = 10 mA, iR = 1 mA
trr
4
ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
2
ns
Forward voltage
Reverse voltage
Reverse recovery time
Min.
Typ.
Max.
Unit
880
1000
mV
75
V
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
3.0
Scattering Limit
C D - Diode Capacitance (pF)
I R - Reverse Current (µA)
100
10
1
0.1
2.5
2.0
1.5
1.0
0.5
V R = 50 V
0.01
0
40
80
120
160
0
200
Tj - Junction Temperature (°C)
94 9151
f = 1 MHz
Tj = 25 °C
0.1
94 9153
Figure 1. Reverse Current vs. Junction Temperature
1
10
100
V R - Reverse Voltage (V)
Figure 3. Diode Capacitance vs. Reverse Voltage
I F - Forward Current (mA)
1000
Tj = 100 °C
100
10
Tj = 25 °C
1
0.1
0
94 9152
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85563
[email protected], [email protected], [email protected]
Rev. 1.7, 20-Aug-10
LS4151
Vishay Semiconductors
Package Dimensions in millimeters (inches): QuadroMELF SOD-80
1.6 (0.063)
1.4 (0.055)
1.
7
(0
.0
gl
as 67)
s
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
2 (0.079) min.
1.25 (0.049) min.
5 (0.197) ref.
96 12071
Document Number 85563
Rev. 1.7, 20-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
Legal Disclaimer Notice
www.vishay.com
Vishay
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Material Category Policy
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
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Revision: 12-Mar-12
1
Document Number: 91000