DISCRETE SEMICONDUCTORS DATA SHEET M3D848 CGD923 870 MHz, 20 dB gain power doubler amplifier Product specification 2002 Oct 08 Philips Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier FEATURES CGD923 PINNING - SOT115AE • High output capability PIN • Excellent linearity DESCRIPTION 1 • Extremely low noise input 2 and 3 common 4 IDC adjust • Excellent return loss properties • Rugged construction 5 • Gold metallization ensures excellent reliability +VB 7 and 8 • Adjustable supply current. common 9 output APPLICATIONS • CATV systems operating in the 40 to 870 MHz frequency range. 1 2 3 4 5 7 8 9 DESCRIPTION Side view Hybrid amplifier module in a SOT115AE package operating at a voltage supply of 24 V (DC), employing both GaAs and Si dies. MGU820 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 45 MHz 19.25 19.75 dB f = 870 MHz 19.5 20.5 dB VB = 24 V − − pin 4 not connected 460 490 mA pin 4 connected to ground 385 415 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VB supply voltage Vi RF input voltage MIN. single tone MAX. UNIT − 30 V − 70 dBmV − 45 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C IDC adjust DC current adjust −10 0 mA 132 channels flat 2002 Oct 08 2 Philips Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier CGD923 CHARACTERISTICS Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 19.25 19.5 19.75 dB f = 870 MHz 19.5 20.0 20.5 dB SL slope straight line f = 45 to 870 MHz 0.0 0.5 1.0 dB FL flatness straight line f = 45 to 100 MHz −0.2 − +0.2 dB f = 100 to 800 MHz −0.6 − +0.4 dB f = 800 to 870 MHz −0.45 − +0.2 dB s11 s22 input return losses output return losses f = 40 to 80 MHz 20 − − dB f = 80 to 160 MHz 19 − − dB f = 160 to 320 MHz 18 − − dB f = 320 to 550 MHz 17 − − dB f = 550 to 870 MHz 16 − − dB f = 40 to 80 MHz 20 − − dB f = 80 to 160 MHz 19 − − dB f = 160 to 320 MHz 18 − − dB f = 320 to 550 MHz 17 − − dB f = 550 to 870 MHz 16 − − dB s21 phase response f = 50 MHz −45 − +45 deg s12 reverse isolation RFout to RFin − − 22 dB NF noise figure f = 50 MHz − − 5 dB f = 870 MHz − − 5.5 dB Pin 4 not connected Itot total current consumption (DC) note 2 460 475 490 mA CTB composite triple beat 79 chs; fm = 445.25 MHz; note 1 − − −64 dB 79 chs flat; Vo = 50 dBmV; fm = 547.25 MHz − − −64 dB 132 chs flat; Vo = 48 dBmV; fm = 745.25 MHz − − −56 dB Xmod CSOsum CSOdiff 2002 Oct 08 cross modulation composite second order distortion (sum) composite second order distortion (diff) 79 chs; fm = 55.25 MHz; note 1 − − −57 dB 79 chs flat; Vo = 50 dBmV; fm = 55.25 MHz − − −57 dB 132 chs flat; Vo = 48 dBmV; fm = 55.25 MHz − − −57 dB 79 chs; fm = 446.5 MHz; note 1 − − −60 dB 79 chs flat; Vo = 50 dBmV; fm = 548.5 MHz − − −60 dB 132 chs flat; Vo = 48 dBmV; fm = 860.5 MHz − − −54 dB 79 chs; fm = 150 MHz; note 1 − − −60 dB 79 chs flat; Vo = 50 dBmV; fm = 150 MHz − − −60 dB 132 chs flat; Vo = 48 dBmV; fm = 150 MHz − − −56 dB 3 Philips Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier SYMBOL PARAMETER CONDITIONS CGD923 MIN. TYP. MAX. UNIT Pin 4 connected to ground Itot total current consumption (DC) note 3 395 400 415 mA CTB composite triple beat 79 chs; fm = 445.25 MHz; notes 1 and 3 − − −62 dB 79 chs flat; Vo = 50 dBmV; fm = 547.25 MHz − − −62 dB Xmod cross modulation CSO Sum composite second order distortion (sum) CSO Diff composite second order distortion (diff) 132 chs flat; Vo = 48 dBmV; fm = 745.25 MHz − − −54 dB 79 chs; fm = 55.25 MHz; notes 1 and 3 − − −55 dB 79 chs flat; Vo = 50 dBmV; fm = 55.25 MHz − − −55 dB 132 chs flat; Vo = 48 dBmV; fm = 55.25 MHz − − −55 dB 79 chs; fm = 446.5 MHz; notes 1 and 3 − − −60 dB 79 chs flat; Vo = 50 dBmV; fm = 548.5 MHz − − −60 dB 132 chs flat; Vo = 48 dBmV; fm = 860.5 MHz − − −54 dB 79 chs; fm = 150 MHz; notes 1 and 3 − − −60 dB 79 chs flat; Vo = 50 dBmV; fm = 150 MHz − − −60 dB 132 chs flat; Vo = 48 dBmV; fm = 150 MHz − − −56 dB Notes 1. Vo = 58 dBmV at 870 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz. 2. Pin 4 is not connected. 3. Pin 4 connected to ground. 2002 Oct 08 4 Philips Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier CGD923 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 8 gold-plated in-line leads SOT115AE D E Z p A2 1 2 3 4 5 7 8 9 A L F S W c b e d w M e1 U2 Q q2 y M B B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c D d E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC JEITA SOT115AE 2002 Oct 08 q q1 q2 38.1 25.4 10.2 S U1 max. 4.2 44.75 U2 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 12 ISSUE DATE 02-08-28 5 Philips Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier CGD923 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Oct 08 6 Philips Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier CGD923 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 2002 Oct 08 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/01/pp8 Date of release: 2002 Oct 08 Document order number: 9397 750 10106