DISCRETE SEMICONDUCTORS DATA SHEET BLF544B UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF544B PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability lfpage 2 4 d2 • Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. g2 1 3 Top view DESCRIPTION 1 gate 1 2 drain 1 3 gate 2 4 drain 2 5 source d1 MBB930 MBB157 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING PINNING - SOT268 PIN s g1 5 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B October 1992 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 28 20 > 12 > 50 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 2 A Ptot total power dissipation − 48 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C; total device; both sections equally loaded THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE CONDITIONS Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 3.7 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.25 K/W MRA993 10 MDA515 80 handbook, halfpage handbook, halfpage Ptot ID (A) (W) 60 (1) (2) (1) 1 40 (2) 20 10−1 1 10 VDS (V) 0 102 0 80 120 Th ( °C) 160 (1) Short-time operation during mismatch. (2) Continuous operation. Total device; both sections equally loaded. (1) Current in this area may be limited by RDS(on). (2) Tmb = 25 °C. Total device; both sections equally loaded. Fig.2 DC SOAR. October 1992 40 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B CHARACTERISTICS (per section) Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ID = 5 mA; VGS = 0 MIN. TYP. MAX. UNIT 65 − − V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 0.5 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 20 mA; VDS = 10 V 1 − 4 V gfs forward transconductance ID = 0.6 A; VDS = 10 V 300 450 − mS RDS(on) drain-source on-state resistance ID = 0.6 A; VGS = 10 V − 0.7 2.5 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 2.4 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 16 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 12 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 3.2 − pF MDA491 4 V MDA495 3 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 2 2 0 1 −2 −4 10−2 10−1 0 ID (A) 1 0 VDS = 10 V. Fig.4 10 15 VGS (V) 20 VDS = 10 V. Temperature coefficient of gate-source voltage as a function of drain current, typical values per section. October 1992 5 Fig.5 4 Drain current as a function of gate-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B MDA496 4 MDA497 50 C (pF) handbook, halfpage handbook, halfpage RDSon (Ω) 40 3 30 2 20 Cis Cos 1 10 0 0 0 50 100 Tj ( °C) 150 0 10 ID = 0.6 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values per section. MDA498 20 Crs (pF) 16 handbook, halfpage 12 8 4 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values per section. October 1992 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage, typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified. RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 500 28 2 × 20 20 > 12 typ. 15 > 50 typ. 60 Ruggedness in class-B operation The BLF544B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VDS = 28 V, f = 500 MHz at rated output power. MDA517 25 Gp handbook, halfpage (dB) 20 handbook, halfpage PL (W) (%) Gp MDA516 30 80 ηD 70 20 15 60 ηD 10 50 10 5 40 0 0 10 20 PL (W) 0 30 30 0 0.4 0.8 1.2 2 1.6 PIN (W) Class-B operation; VDS = 28 V; IDQ = 2 × 20 mA; ZL = 8.4 + j14.3 Ω; f = 500 MHz. Class-B operation; VDS = 28 V; IDQ = 2 × 20 mA; ZL = 8.4 + j14.3 Ω; f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of output power, typical values. October 1992 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B +VD handbook, full pagewidth VBIAS R2 R3 C10 R4 C18 R7 C11 L20 C8 C15 ,, ,,,,, ,,,,,, ,, ,, ,,,,, ,,,,,,,, ,, ,,,,, ,,,,,,,, R5 L16 D.U.T. L1 50 Ω input C14 L2 C3 L4 L6 L8 L10 L12 L14 L18 L22 L24 C1 R1 C6 C7 C20 C21 C22 C2 C4 C24 L5 L7 L9 L11 L13 R6 L15 BLF544B L19 L23 L25 L17 C16 C9 C12 R11 R7 C13 L21 MBK460 C19 C17 VBIAS R8 R9 +VD f = 500 MHz. Fig.11 Test circuit for class-B operation. October 1992 L26 L27 C5 L3 C23 7 L28 50 Ω output Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2 multilayer ceramic chip capacitor (note 1) 9.1 pF, 500 V C3, C4, C6 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V C5 film dielectric trimmer 2 to 9 pF 2222 809 09005 C7, C21, C22 film dielectric trimmer 2 to 18 pF 2222 809 09006 C8, C9, C15, C16 multilayer ceramic chip capacitor (note 1) 390 pF, 500 V C10, C13 multilayer ceramic chip capacitor 2 × 100 nF in parallel, 50 V 2222 852 47104 C11, C12, C14, C17 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104 C18, C19 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C20 multilayer ceramic chip capacitor (note 1) 6.8 pF, 500 V C23, C24 multilayer ceramic chip capacitor (note 1) 16 pF, 500 V L1, L3, L26, L28 stripline (note 2) 50 Ω 56 × 2.4 mm L2 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm ext. conductor length 56 mm L4, L5 stripline (note 2) 56 Ω 8 × 2 mm L6, L7 stripline (note 2) 56 Ω 15.5 × 2 mm L8, L9 stripline (note 2) 42 Ω 10 × 3 mm L10, L11 stripline (note 2) 42 Ω 5 × 3 mm L12, L13, L14, L15 stripline (note 2) 42 Ω 6 × 3 mm L16, L17 6 turns enamelled 1 mm copper wire 124 nH length 8.5 mm int. dia. 5.4 mm leads 2 × 5 mm L18, L19 stripline (note 2) 56 Ω 22 × 2 mm L20, L21 grade 3B Ferroxcube RF choke 4312 020 36642 L22, L23 stripline (note 2) 56 Ω 18 × 2 mm L24, L25 stripline (note 2) 56 Ω 16 × 2 mm L27 semi-rigid cable (note 3) 50 Ω ext. dia. 2.2 mm ext. conductor length 56 mm R1 0.4 W metal film resistor 5.62 Ω 2322 151 75628 R2, R8 0.4 W metal film resistor 11.5 kΩ 2322 151 71159 R3, R9 10 turns potentiometer 5 kΩ R4, R7 0.4 W metal film resistor 590 Ω 2322 151 75901 R5, R6 0.4 W metal film resistor 46.4 Ω 2322 151 74649 R10, R11 1 W metal film resistor 10 Ω 2322 153 51009 October 1992 8 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (εr = 2.2), thickness 1⁄32 inch. 3. Semi-rigid cables L2 and L27 are soldered on to striplines L1 and L26. 200 handbook, full pagewidth mounting screw rivet strap 85 mounting screw straps +Vds R3 C14 R10 C18 C10 R4 L1 + L2 C11 C1 C3 L4 R1 L5 C2 C4 C5 L6 L7 L20 C15 L26 + L27 C8 R5 L8 L10 L12 C6 C7 L13 L9 L11 R6 C12 L16 L14 L18 C20 L19 C21 L15 C23 L24 L22 L23 C22 L25 C24 L17 C9 L3 R7 C16 L28 L21 C13 C19 R11 C17 +Vds R9 The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets. Dimensions in mm. Fig.12 Component layout for 500 MHz test circuit. October 1992 9 MDA514 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B MDA492 10 MDA494 40 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 0 RL 30 −10 20 XL xi −20 −30 10 0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 20 mA; PL = 20 W. Class-B operation; VDS = 28 V; IDQ = 2 × 20 mA; PL = 20 W. Fig.13 Input impedance as a function of frequency (series components), typical values per section. Fig.14 Load impedance as a function of frequency (series components), typical values per section. MDA493 30 handbook, halfpage Gp (dB) 20 10 0 0 200 400 f (MHz) 600 Class-B operation; VDS = 28 V; IDQ = 2 × 20 mA; PL = 20 W. Fig.15 Power gain as a function of frequency, typical values per section. October 1992 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT268A D A F 5 U1 B q C w2 M C H1 1 H c 4 P U2 E w1 M A B A 2 3 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D E e F H H1 p Q q U1 U2 w1 w2 w3 mm 4.91 4.19 1.66 1.39 0.13 0.07 12.96 12.44 6.48 6.22 6.45 2.04 1.77 17.02 16.00 8.23 7.72 3.43 3.17 2.67 2.41 18.42 24.90 24.63 6.61 6.35 0.51 1.02 0.26 inches 0.193 0.165 0.065 0.005 0.055 0.003 0.510 0.490 0.255 0.080 0.670 0.254 0.245 0.070 0.630 0.105 0.725 0.095 0.980 0.970 0.260 0.250 0.02 0.04 0.01 OUTLINE VERSION 0.324 0.135 0.304 0.125 REFERENCES IEC JEDEC EIAJ SOT268A October 1992 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF544B DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 12