PHILIPS PESD5V2S18U

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D574
PESD5V2S18U
ESD protection array
Product data sheet
2003 Apr 28
NXP Semiconductors
Product data sheet
ESD protection array
FEATURES
PESD5V2S18U
PINNING
• Uni-directional ESD protection of
up to 18 lines
PIN
DESCRIPTION
1 to 5
cathode (k1 to k5)
• Maximum peak reverse power:
PPP = 100 W at tp = 8/20 µs
6 and 16
• Low clamping voltage:
VCL = 12 V max. at IZSM = 10 A
7 to 15
cathode (k6 to k14)
17 to 20
cathode (k15 to k18)
common anode (a1; a2)
• Low leakage current:
IR = 100 nA typ. at VRWM = 5.2 V
• IEC 61000-4-2, level 4 (ESD);
15 kV (air) and 8 kV (contact).
handbook, 4 columns
1
20
2
19
APPLICATIONS
3
18
• Printer parallel ports
4
17
• Computers and peripherals
5
16
• Communication systems.
6
15
7
14
8
13
9
12
10
11
1
20
DESCRIPTION
Monolithic ESD protection device
designed to protect up to
18 transmission or data lines from the
damage caused by electrostatic
discharge (ESD) and surge pulses.
10
11
MHC510
Fig.1 Simplified outline (SSOP20; SOT339-1) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IPP
non-repetitive peak reverse current
tp = 8/20 µs
−
10
A
PPP
non-repetitive peak reverse power
dissipation
tp = 8/20 µs
−
100
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
electrostatic discharge voltage
+150
°C
IEC 61000-4-2 (contact discharge) 30
−
kV
HBM MIL-Std 883
−
kV
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3
>4 kV
2003 Apr 28
2
10
NXP Semiconductors
Product data sheet
ESD protection array
PESD5V2S18U
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
VALUE
UNIT
135
K/W
one or more diodes loaded
Note
1. Refer to SOT339-1 standard mounting conditions.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VRWM
crest working reverse
voltage
IR
reverse current
VCL
clamping voltage
VBR
breakdown voltage
rdiff
differential resistance
Cd
diode capacitance
2003 Apr 28
CONDITIONS
MIN.
TYP.
MAX.
UNIT
−
−
5.2
V
VRWM = 5.2 V
−
0.1
1
µA
IZSM = 3 A; tp = 8/20 µs; see Fig.5
−
−
8
V
IZSM = 10 A; tp = 8/20 µs; see Fig.5 −
−
12
V
IZ = 5 mA
6.4
6.8
7.2
V
IZ = 1 mA
−
−
40
Ω
IZ = 5 mA
−
−
8
Ω
VR = 0; f = 1 MHz; see Fig.4
−
100
−
pF
3
NXP Semiconductors
Product data sheet
ESD protection array
PESD5V2S18U
MHC485
103
handbook, halfpage
MHC486
102
handbook, halfpage
PZSM
(W)
IZSM
(A)
102
10
10
10−2
Fig.2
10−1
1
tp (ms)
1
10−2
10
Maximum non-repetitive peak reverse
power as a function of pulse duration.
Fig.3
MHC487
110
10−1
1
tp (ms)
10
Maximum non-repetitive peak reverse
current as a function of pulse duration.
MHC488
11
handbook, halfpage
handbook,
Cd halfpage
VCL
(V)
(pF)
100
10
90
80
9
70
60
8
50
7
40
0
1
2
3
4
5
3
6
4
VR (V)
f = 1 MHz; Tamb = 25 °C
tp = 8/20 µs
Fig.4
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2003 Apr 28
4
5
6
7
8
9
10
IPP(A)
Clamping voltage as a function of peak
reverse pulse current; typical values.
NXP Semiconductors
Product data sheet
ESD protection array
PESD5V2S18U
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
CZ
DIGITIZING
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
note 1
Note 1: attenuator is only used for open
socket high voltage measurements
IEC 1000-4-2 network
CZ = 150 pF; RZ = 330 Ω
1/18 PESD5V2S18U
vertical scale = 200 V/Div
horizontal scale = 50 ns/Div
vertical scale = 5 V/Div
horizontal scale = 50 ns/Div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 1000−4−2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000−4−2 network)
GND
GND
vertical scale = 200 V/Div
horizontal scale = 50 ns/Div
unclamped −1 kV ESD voltage waveform
(IEC 1000−4−2 network)
vertical scale = 5 V/Div
horizontal scale = 50 ns/Div
clamped −1 kV ESD voltage waveform
(IEC 1000−4−2 network)
Fig.6 ESD clamping test set-up and waveforms.
2003 Apr 28
5
MHC489
NXP Semiconductors
Product data sheet
ESD protection array
PESD5V2S18U
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm
D
SOT339-1
E
A
X
c
HE
y
v M A
Z
20
11
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
bp
e
detail X
w M
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
2
0.21
0.05
1.80
1.65
0.25
0.38
0.25
0.20
0.09
7.4
7.0
5.4
5.2
0.65
7.9
7.6
1.25
1.03
0.63
0.9
0.7
0.2
0.13
0.1
0.9
0.5
8
0o
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
OUTLINE
VERSION
SOT339-1
2003 Apr 28
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-150
6
o
NXP Semiconductors
Product data sheet
ESD protection array
PESD5V2S18U
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Apr 28
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2003 Apr 28
Document order number: 9397 750 10889