PHILIPS BLV857

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV857
UHF linear push-pull power
transistor
Product specification
Supersedes data of 1995 Oct 04
1997 Jan 16
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES
BLV857
PINNING SOT324B
• Internal input matching for an optimum wideband
capability and high gain
• Polysilicon emitter ballasting resistors for an optimum
temperature profile
• Gold metallization ensures excellent reliability.
PIN
SYMBOL
1
2
3
4
c1
c2
b1
b2
collector 1
collector 2
base 1
base 2
DESCRIPTION
5
e
common emitters
APPLICATION
• Common emitter class-A operation in linear
transposers/transmitters (television) in the
470 to 860 MHz frequency band.
c1
handbook, halfpage
1
2
b1
DESCRIPTION
e
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap. The
common emitters are connected to the flange.
5
3
b2
4
c2
Top view
MAM217
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common emitter push-pull test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
CW class-A
860
25
2 × 1.1
≥10(1)
≥10(1)
Note
1. Three-tone test signal (−8, −16 and −10 dB); dim = −54 dB.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Jan 16
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
collector-base voltage
collector-emitter voltage
emitter-base voltage
VCEO
VEBO
IC
open emitter
open base
open collector
collector current (DC)
average collector current
IC(AV)
Ptot
Tmb = 70 °C; note 1; see Fig.2
total power dissipation
Tstg
storage temperature
operating junction temperature
Tj
MIN.
MAX.
UNIT
−
−
−
60
28
2.5
V
V
V
−
−
7.4
7.4
A
A
−
80
W
−65
−
+150
200
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to mounting-base Ptot = 80 W; Tmb = 70 °C note 1
thermal resistance from mounting-base to heatsink note 1
Rth j-mb
Rth mb-h
Note to Limiting values and Thermal characteristics
1. Total device; both sections equally loaded.
MBH754
200
handbook, halfpage
Ptot
(W)
160
120
(1)
80
(2)
40
0
0
40
80
120
160
Tmb (°C)
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 Power derating curve.
1997 Jan 16
3
VALUE
UNIT
1.6
0.4
K/W
K/W
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
CHARACTERISTICS
Values apply to either transistor section; Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
Cc
CONDITIONS
TYP.
MAX.
UNIT
collector-base breakdown voltage
IC = 15 mA; IE = 0
60
−
−
V
collector-emitter breakdown voltage
emitter-base breakdown voltage
IC = 30 mA; IB = 0
IE = 0.6 mA; IC = 0
28
2.5
−
−
−
−
V
V
collector-base leakage current
VCB = 27 V; VBE = 0
−
−
1.5
mA
collector-emitter leakage current
DC current gain
VCE = 20 V
VCE = 25 V; IC = 1.1 A; see Fig.3
−
30
−
−
3
140
mA
collector capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz;
see Fig.4
VCE = 25 V; IC = 0; f = 1 MHz
−
18
−
pF
−
11
−
pF
feedback capacitance
Cre
MIN.
MBH756
160
MBH755
40
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
120
30
80
20
40
10
0
0
0
1
2
Ic (A)
3
0
10
VCE = 25 V; tp = 500 µs; δ = <1 %.
IE = ie = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
1997 Jan 16
4
20
30
VCB (V)
40
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter push-pull class-A test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(A)
Po sync
(W)
Gp
(dB)
dim
(dB)
CW class-A
860
25
2 × 1.1
≥10(1)
≥10(1)
≤−54(1)
2 × 1.1
≥10(2)
≥10(2)
≤−51(2)
CW class-A
860
25
Notes
1. Three-tone test method: fvision = 855.25 MHz (vision carrier −8 dB); fsound = 860.75 MHz (sound carrier −10 dB);
fsideband = 859.68 MHz (sideband signal −16 dB); 0 dB corresponds to peak sync level.
2. Three-tone test method: fvision = 855.25 MHz (vision carrier −8 dB); fsound = 860.75 MHz (sound carrier −7 dB);
fsideband = 859.68 MHz (sideband signal −16 dB); 0 dB corresponds to peak sync level.
Ruggedness in class-A operation
The BLV857 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
conditions: VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; Th = 25 °C; Po sync = 10 W.
MBH757
50
MBH758
14
handbook, halfpage
handbook, halfpage
Po sync
(W)
Gp
(dB)
40
(1)
12
(2)
(1)
30
(2)
10
20
8
10
6
0
0
2
4
Pi sync (W)
6
0
20
40
Po sync (W)
60
VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 25 °C.
(2) Th = 70 °C.
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.5
Fig.6
Output power as a function of input power;
typical values.
1997 Jan 16
5
Power gain as a function of output power;
typical values.
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
MBH759
−30
dim
MBH760
−40
dim
(dB)
handbook, halfpage
handbook, halfpage
(dB)
−40
(1)
−45
(2)
−50
−50
−60
(1)
−55
−70
−80
(2)
0
20
40
Po sync (W)
−60
1.4
60
1.8
2.2
2.6
VCE = 25 V; ICQ = 2 × 1.1 A; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 70 °C.
(2) Th = 25 °C.
VCE = 25 V; f = 860 MHz; (3-tone; −8/−16/−10 dB).
(1) Th = 70 °C.
(2) Th = 25 °C.
Fig.7
Fig.8
Intermodulation distortion as a function of
output power; typical values.
1997 Jan 16
6
IC (A) 3
Intermodulation distortion as a function of
collector current; typical values.
1997 Jan 16
7
input
50 Ω
C4
+VBB
L1
C21
L3
C9
C10
R6
C20
R5
L2
B1
DUT
L6
C24
L8
C30
C2
T1
C31
L10
L12
C25
L11
L9
L13
C28
L15
C11
C12
C27
L14
C26
L16
B2
C29
C13
C14
,,,,,,,,,
,,,,,
,,,,,
,,,,,,,,,
,,,,
,,,,,
,,,,,
R1
R2
T2
L17
MBH764
output
50 Ω
C15
+VCC
UHF linear push-pull power transistor
Fig.9 Class-A test circuit at f = 860 MHz.
L4
C22
C23
L5
L7
C1
C6
C5
,,
,,
,,,,,
,,,,,,,,,
,,,,,
,,,,
,,,,,
,,,,,,,,,
,,,,,
C7
C8
R3
P1
T2
C3
R4
handbook, full pagewidth
Vsupply
Philips Semiconductors
Product specification
BLV857
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
115
handbook, full pagewidth
55
E C B
T1
C4
R3
P1
T2
C5
B1
C3
C6
R1 R2 C2
B2
L7
C8
L1 & L2
C7
50 Ω
input
R5
C20
R6
C9
C10
C30
L9
L11
C21 & C22
L5
L3
C15
C25 & C26
C11
L13
C12
50 Ω
output
C29
BLV857
L12
L10
C31
L4
L6
C23 & C24
VCC
L17
R4
C1
L14
C27 & C28
L8
L15
&
L16
C14
C13
MBH765
wire jumper
inner lead and outer lead are shorted (each balun).
Dimensions in mm.
The components are situated on one side of the copper-clad epoxy fibre-glass board, the other side is unetched and serves
as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Printed-circuit board and component lay-out for 860 MHz class-A test circuit.
1997 Jan 16
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
List of components
COMPONENT
DESCRIPTION
VALUE
C1, C2, C3, C5, C6, multilayer ceramic chip capacitor
C7, C8, C9, C10
C4
solid aluminium capacitor
10 nF
DIMENSIONS CATALOGUE No.
805
47 µF; 25 V
100 nF
2222 590 16627
2222 030 36479
C11, C12, C13,
C14, C30, C31
multilayer ceramic chip capacitor
1206
2222 591 16641
C15
C20
solid aluminium capacitor
10 µF; 63 V
multilayer ceramic chip capacitor; note 1 18 pF
C21
C22, C24, C26, C28
C23
C25
multilayer ceramic chip capacitor; note 1
Tekelec Giga trim 37271; note 3
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor;
notes 1 and 3
3 pF
0.6 to 4.5 pF
7.5 pF
11 pF
C27
9.1 pF
C29
L1, L2, L15, L16
L3, L4
L5, L6
L7, L8
L9, L10
L11, L12
L13, L14
L17
B1, B2
R1
multilayer ceramic chip capacitor;
notes 1 and 3
multilayer ceramic chip capacitor; note 1
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; notes 2 and 4
Semi rigid coax balun UT70-25
SMD resistor
100 pF
50 Ω
50 Ω
26.5 Ω
15 Ω
104 Ω
38.8 Ω
50 Ω
76.2 Ω
Z = 25 Ω ±1.5 Ω
220 Ω
30.6 × 2 mm
10 × 2 mm
3 × 5 mm
3 × 10 mm
6 × 0.5 mm
3 × 3 mm
22.5 × 2 mm
120 × 1 mm
70 mm
805
2322 734 22201
R2
R3
R4
SMD resistor
SMD resistor
SMD resistor
1.8 Ω
4.3 kΩ
33 Ω
805
805
805
2322 734 21808
2322 734 24302
2322 734 23309
R5, R6
P1
SMD resistor
potentiometer
3.3 Ω
2 kΩ
805
2322 734 23308
T1
T2
NPN transistor
double PNP transistor
BD139
BCV62
2222 030 38109
9330 912 20112
5322 130 60505
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board: Rogers ULTRALAM 2000 (B0300M1046QB)
(εr = 2.55); thickness 0.76 mm.
3. Position of C25 and C26: distance of centre capacitor to transistor BLV857 = 7.5 mm.
Position of C27 and C28: distance of centre capacitor to balun B2 = 1.5 mm.
4. The sense resistor on the bias unit is implemented as a stripline L17, in this way we obtain a small sense resistor
(approximately 80 mΩ) which can handle the dissipated power.
1997 Jan 16
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
MBH761
5
BLV857
MBH762
10
ZL
(Ω)
handbook, halfpage
handbook, halfpage
Zi
(Ω)
4
8
xi
RL
3
6
2
4
0
400
XL
ri
1
600
2
800
f (MHz)
0
400
1000
600
800
f (MHz)
1000
VCE = 25 V; ICQ = 2 × 1.1 A; Po sync = 10 W (total device); Th = 25 °C.
VCE = 25 V; ICQ = 2 × 1.1 A; Po sync = 10 W (total device); Th = 25 °C.
Fig.11 Input impedance (per section) as a function
of frequency (series components);
typical values.
Fig.12 Load impedance (per section) as a function
of frequency (series components);
typical values.
MBH763
20
Gp
handbook, halfpage
(dB)
16
handbook, halfpage
12
8
Zi
ZL
MBA451
4
0
400
600
800
f (MHz)
1000
VCE = 25 V; ICQ = 2 × 1.1 A; Po sync = 10 W (total device); Th = 25 °C.
Fig.13 Gain as a function of frequency;
typical values.
1997 Jan 16
Fig.14 Definition of transistor impedance.
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
PACKAGE OUTLINE
19.03
18.77
handbook, full pagewidth
8.26
8.0
1.66
1.39
0.1
5.0
max
2.32
2.20
14.22
2
1
5.59
4.57
3.43 6.43
3.17 6.17
5
3
5.59
4.57
4
1.66
1.39 (3x)
MSA451
Dimensions in mm.
Recommended screw: cheese-head 4-40 UNC/2A. Torque on screw: min. 0.6 Nm; max. 0.75 Nm.
Heatsink compound must be applied sparingly and evenly distributed.
Fig.15 SOT324B.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jan 16
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127067/0/02/pp12
Date of release: 1997 Jan 16
Document order number:
9397 750 01381