Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current VBE = 0 V tf Fall time 8 6.5 0.3 0.14 1500 800 11 29 45 3.0 0.4 - V V A A W V A A µs µs PINNING - SOT199 PIN Ths ≤ 25 ˚C IC = 8 A; IB = 2 A f = 16 kHz f = 70 kHz ICsat = 8 A; f = 16 kHz ICsat = 6.5 A; f = 70 kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 11 29 7 10 7 45 150 150 V V A A A A A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. May 1998 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 12.5 - 100 - µA V V 0.85 4.2 0.95 14 5.8 3.0 1.1 7.3 V V TYP. MAX. UNIT 4.5 0.3 5.5 0.4 µs µs 2.3 0.14 - µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8 A; IB = 2 A IC = 8 A; IB = 2 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (16 kHz line deflection circuit) ICsat = 8.0 A;IB1 = 1.6 A (IB2 = -4 A) Turn-off storage time Turn-off fall time Switching times (70 kHz line deflection circuit) ts tf ICsat = 6.5 A;IB1 = 1.3 A (IB2 = -3.9 A) Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). May 1998 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AF ICsat TRANSISTOR + 50v IC 100-200R DIODE t IB1 IB Horizontal t Oscilloscope 2.5us 7.1us IB2 Vertical 14.2us 1R 100R VCE 6V 30-60 Hz t Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms (70 kHz). IC / mA ICsat 90 % IC 250 10 % 200 tf t ts IB IB1 100 t 0 VCE / V min VCEOsust - IB2 Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times definitions. ICsat + 150 v nominal adjust for ICsat DIODE t Lc IB1 IB t 20us 26us IB2 IBend 64us VCE LB T.U.T. Cfb -VBB t Fig.6. Switching times test circuit. Fig.3. Switching times waveforms (16 kHz). May 1998 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU4523AF VBEsat / V BU4523AF/X hFE VCE = 1 V BU4523AF/X 1.2 Ths = 25 C Ths = 85 C Ths = 25 C Ths = 85 C 1.1 IC = 8 A 1 10 0.9 0.8 IC = 6.5 A 0.7 1 0.01 0.1 1 10 IC / A 0.6 100 Fig.7. High and low DC current gain. hFE 0 1 2 3 4 Fig.10. Typical base-emitter saturation voltage. BU4523AF/X BU4523AF/X 16kHz ts/tf / us 100 10 VCE = 5 V IB / A ICsat = 8 A Ths = 85 C Freq = 16 kHz Ths = 25 C Ths = 85 C 8 ts 6 10 4 2 tf 1 0.01 0.1 1 10 IC / A 0 100 Fig.8. High and low DC current gain. VCEsat / V 1 2 3 IB / A 4 Fig.11. Typical collector storage and fall time. IC =8 A; Tj = 85˚C; f = 16kHz BU4523AF/X 10 0 120 Normalised Power Derating PD% with heatsink compound 110 Ths = 25 C Ths = 85 C 100 90 80 70 1 60 50 40 IC/IB = 5 0.1 30 20 10 0 0.01 0.1 0 1 10 IC / A 100 40 60 80 Ths / C 100 120 140 Fig.12. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C Fig.9. Typical collector-emitter saturation voltage. May 1998 20 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 10 1 0.1 BU4523AF Zth / (K/W) IC / A 30 BU2523 0.5 0.2 0.1 0.05 20 0.02 10 PD 0.01 D=0 0.001 1E-06 tp D= T tp 1E-04 1E-02 t/s 0 100 t T 1000 1500 VCE / V 1E+00 Fig.15. Reverse bias safe operating area. Tj ≤ Tjmax Fig.13. Transient thermal impedance. 10 Ic(sat) (A) 9 VCC 8 7 6 5 LC 4 IBend -VBB 3 VCL LB 2 T.U.T. 1 CFB 0 10 20 30 50 70 40 60 Horizontal frequency (kHz) 80 90 100 Fig.16. ICsat during normal running vs. frequency of operation for optimum performance Fig.14. Test Circuit RBSOA. May 1998 0 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.17. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 7 Rev 1.100