BLF871 UHF power LDMOS transistor Rev. 02 — 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 40 V in a common-source 860 MHz test circuit. Mode of operation f PL PL(PEP) (MHz) (W) (W) ηD PL(AV) Gp IMD3 PAR (W) (dB) (%) (dBc) (dB) CW, class AB 860 100 - - 21 60 - - 2-tone, class AB f1 = 860; f2 = 860.1 - 100 - 21 47 −35 - DVB-T (8k OFDM) 858 - - 24 22 33 −34[1] 8.3[2] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: u Peak envelope power load power = 100 W u Power gain = 21 dB u Drain efficiency = 47 % u Third order intermodulation distortion = −35 dBc n DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: u Average output power = 24 W u Power gain = 22 dB u Drain efficiency = 33 % u Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency) BLF871 NXP Semiconductors UHF power LDMOS transistor n n n n n n n Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n Communication transmitter applications in the UHF band n Industrial applications in the UHF band 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 [1] 3 2 3 2 [1] sym112 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLF871 - Version flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Min Max Unit drain-source voltage - 89 V VGS gate-source voltage −0.5 +13 V Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLF871_2 Preliminary data sheet Conditions © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 2 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1] Thermal characteristics Parameter Conditions thermal resistance from junction to case Tcase = 80 °C; PL(AV) = 50 W [1] Typ Unit 0.95 K/W Rth(j-c) is measured under RF conditions. 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.12 mA [1] 89 - Unit 105.5 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 112 mA 1.4 - 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 40 V - - 1.4 µA IDSX drain cut-off current VGS = VGSth + 3.75 V; VDS = 10 V 16.7 20 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 140 nA RDS(on) drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 3.7 A - 210 - mΩ Ciss input capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz - 95 - pF Coss output capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz - 30 - pF Crss reverse transfer capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz - 1 - pF [1] [1] ID is the drain current. BLF871_2 Preliminary data sheet Min Typ Max [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 3 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 001aaj276 160 Coss (pF) 120 80 40 0 0 20 40 60 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; typical values 7. Application information Table 7. RF performance in a common-source narrowband 860 MHz test circuit Th = 25 °C unless otherwise specified. Mode of operation f VDS IDq (MHz) (V) 2-tone, class AB f1 = 860; f2 = 860.1 DVB-T (8k OFDM) 858 PL(PEP) Gp (A) (W) (W) (dB) (%) 40 0.5 100 - > 19 > 44 < −30 - 40 0.5 - 24 > 19 > 30 < −31 [1] > 7.8 [2] IMD3 PAR (dBc) (dB) [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. BLF871_2 Preliminary data sheet ηD PL(AV) © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 4 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 7.1 Narrowband RF figures 7.1.1 CW 001aaj277 24 80 ηD (%) Gp (dB) Gp 22 60 ηD 20 40 18 20 16 0 60 0 180 120 PL (W) VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. Fig 2. CW power gain and drain efficiency as a function of load power; typical values 7.1.2 2-Tone 001aaj278 25 ηD (%) Gp (dB) 23 001aaj279 0 80 IMD3 (dBc) 60 −20 Gp ηD 21 40 −40 19 (1) (2) 20 17 0 40 0 120 80 −60 0 40 PL(AV) (W) 80 120 PL(AV) (W) VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 3. 2-Tone power gain and drain efficiency as functions of average load power; typical values Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 5 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 7.1.3 DVB-T 001aaj280 24 60 ηD (%) Gp (dB) 001aaj281 −15 IMD3 (dBc) −25 Gp 22 40 −35 ηD 20 20 −45 (1) (2) 0 18 0 20 40 −55 60 0 20 PL(AV) (W) 40 60 PL(AV) (W) VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. VDS = 40 V; IDq = 0.5 A; measured in a common source narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 5. DVB-T power gain and drain efficiency as functions of average load power; typical values Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 6 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 7.2 Broadband RF figures 7.2.1 2-Tone 001aaj282 22 Gp (dB) (2) (1) 20 70 ηD (dB) 001aaj283 0 IMD3 (dBc) 60 Gp −20 (2) (1) 18 50 (2) (1) ηD −40 16 40 14 400 500 600 700 30 800 900 f (MHz) −60 400 IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. 500 600 (1) VDS = 40 V; PL(AV) = 45 W (2) VDS = 42 V; PL(AV) = 50 W (2) VDS = 42 V; PL(AV) = 50 W 2-Tone power gain and drain efficiency as a function of frequency; typical values Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values BLF871_2 Preliminary data sheet 800 900 f (MHz) IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V; PL(AV) = 45 W Fig 7. 700 © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 7 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 7.2.2 DVB-T 001aaj284 22 Gp (dB) Gp 001aaj285 0 ηD (%) (2) (1) 20 50 IMD3 (dBc) −20 40 (2) (1) (1) (2) ηD 18 16 400 500 −40 30 600 −60 400 20 800 900 f (MHz) 700 IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. 500 600 (1) VDS = 40 V; PL(AV) = 22 W (1) VDS = 40 V; PL(AV) = 22 W (2) VDS = 42 V; PL(AV) = 24 W DVB-T power gain and drain efficiency as functions of frequency; typical values 800 900 f (MHz) IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. (2) VDS = 42 V; PL(AV) = 24 W Fig 9. 700 Fig 10. DVB-T third order intermodulation distortion as a function of frequency; typical values 001aaj286 9 PAR (dB) (1) (2) 8 (3) (4) 7 6 5 400 500 600 700 800 900 f (MHz) IDq = 0.5 A; measured in a common source broadband test circuit as described in Section 8. PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. (1) PAR at 0.01 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W (2) PAR at 0.01 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W (3) PAR at 0.1 % probability on the CCDF; VDS = 40 V; PL(AV) = 22 W (4) PAR at 0.1 % probability on the CCDF; VDS = 42 V; PL(AV) = 24 W Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 8 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 7.3 Ruggedness in class-AB operation The BLF871 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated power. 7.4 Impedance information ZL drain Zi gate 001aai086 Fig 12. Definition of transistor impedance Table 8. Typical impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V. f Zi ZL MHz Ω Ω 300 0.977 − j3.327 5.506 + j1.774 325 0.977 − j2.983 5.366 + j1.858 350 0.978 − j2.681 5.223 + j1.930 375 0.979 − j2.414 5.078 + j1.990 400 0.979 − j2.174 4.932 + j2.040 425 0.980 − j1.956 4.786 + j2.079 450 0.981 − j1.758 4.640 + j2.108 475 0.982 − j1.576 4.495 + j2.128 500 0.982 − j1.407 4.352 + j2.138 525 0.983 − j1.250 4.212 + j2.140 550 0.984 − j1.103 4.074 + j2.135 575 0.985 − j0.964 3.940 + j2.122 600 0.986 − j0.834 3.809 + j2.102 625 0.987 − j0.709 3.682 + j2.077 650 0.988 − j0.591 3.558 + j2.045 675 0.990 − j0.478 3.438 + j2.009 700 0.991 − j0.370 3.323 + j1.968 725 0.992 − j0.266 3.211 + j1.923 750 0.993 − j0.165 3.103 + j1.874 775 0.995 − j0.068 3.000 + j1.822 800 0.996 + j0.026 2.900 + j1.766 825 0.997 + j0.117 2.804 + j1.708 850 0.999 + j0.206 2.711 + j1.648 875 1.000 + j0.292 2.623 + j1.586 900 1.002 + j0.376 2.538 + j1.521 BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 9 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor Table 8. Typical impedance …continued Simulated Zi and ZL device impedance; impedance info at VDS = 42 V. f Zi ZL MHz Ω Ω 925 1.004 + j0.459 2.456 + j2.455 950 1.005 + j0.540 2.378 + j2.388 975 1.007 + j0.619 2.303 + j2.320 1000 1.009 + j0.696 2.230 + j2.250 7.5 Reliability 001aaj287 105 Years (1) (2) (3) (4) (5) (6) 104 103 102 10 (7) (8) (9) (10) (11) 1 0 2 4 6 IDS(DC) (A) TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ. (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 13. BLF871 electromigration (IDS(DC)) BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 10 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 8. Test information Table 9. List of components For test circuit, see Figure 14, Figure 15 and Figure 16. Component Description Value Remarks C1, C2 multilayer ceramic chip capacitor 5.1 pF [1] C3, C4 multilayer ceramic chip capacitor 10 pF [2] C5 multilayer ceramic chip capacitor 6.8 pF [1] C6 multilayer ceramic chip capacitor 4.7 pF [1] C7 multilayer ceramic chip capacitor 2.7 pF [1] C8, C9, C10, C25, multilayer ceramic chip capacitor C26 100 pF [1] C11, C27 multilayer ceramic chip capacitor 10 µF C12 electrolytic capacitor 470 µF; 63 V C20 multilayer ceramic chip capacitor 10 pF [3] C21 multilayer ceramic chip capacitor 8.2 pF [3] C22 trimmer 0.6 pF to 4.5 pF TDK C570X7R1H106KT000N or capacitor of same quality. Tekelec C23 multilayer ceramic chip capacitor 6.8 pF [3] C24 multilayer ceramic chip capacitor 3.9 pF [3] L1 stripline - [4] (W × L) 7 mm × 15 mm - [4] (W × L) 2.4 mm × 9 mm (W × L) 2.4 mm × 10 mm L2 stripline L3 stripline - [4] L4 stripline - [4] (W × L) 2.4 mm × 25 mm - [4] (W × L) 2.4 mm × 10 mm - [4] (W × L) 2.0 mm × 20 mm (W × L) 2.0 mm × 21 mm L5 stripline L6 stripline L7 stripline - [4] L20 stripline - [4] (W × L) 7 mm × 12 mm - [4] (W × L) 2.4 mm × 13 mm - [4] (W × L) 2.4 mm × 31 mm [4] (W × L) 2.4 mm × 5 mm L21 stripline L22 stripline L23 stripline - R1 resistor 100 Ω R2 resistor 10 kΩ [1] American technical ceramics type 100B or capacitor of same quality. [2] American technical ceramics type 180R or capacitor of same quality. [3] American technical ceramics type 100A or capacitor of same quality. [4] Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 µm. BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 11 of 18 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors BLF871_2 Preliminary data sheet VGG R2 C11 C12 C27 VDD C26 C9 R1 L6 C1 C20 50 Ω C25 C3 L23 C8 L22 C24 L21 C23 C22 L20 L1 C21 C2 L2 C4 L3 C5 L4 C6 50 Ω L5 C7 Rev. 02 — 5 March 2009 L7 C10 001aaj288 See Table 9 for a list of components. Fig 14. Class-AB common-source broadband amplifier BLF871 UHF power LDMOS transistor 12 of 18 © NXP B.V. 2009. All rights reserved. BLF871 NXP Semiconductors UHF power LDMOS transistor 76.2 mm 40 mm 40 mm 001aaj289 Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 13 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor R2 C11 C9 C12 C27 L6 C26 R1 C3 C1 C20 C25 L23 C22 L21 C24 L20 L1 L2 C21 C5 C2 C23 C4 C8 L3 L5 L7 C6 L23 C7 C10 L4 001aaj290 See Table 9 for a list of components. Fig 16. Component layout for class-AB common source amplifier BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 14 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-12-06 99-12-28 SOT467C Fig 17. Package outline SOT467C BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 15 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CW Continuous Wave CCDF Complementary Cumulative Distribution Function DVB Digital Video Broadcast DVB-T Digital Video Broadcast - Terrestrial ESD ElectroStatic Discharge HF High Frequency IMD3 Third order InterModulation Distortion LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor OFDM Orthogonal Frequency Division Multiplexing PAR Peak-to-Average power Ratio PEP Peak Envelope Power RF Radio Frequency TTF Time To Failure UHF Ultra High Frequency VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF871_2 20090305 Preliminary data sheet - BLF871_1 Modifications: BLF871_1 • • • • • Table 1 on page 1: corrected some values Section 1.2 on page 1: corrected some values Table 6 on page 3: corrected some values Table 6 on page 3: removed gfs specification Table 7 on page 4: corrected some values. 20081218 Objective data sheet BLF871_2 Preliminary data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 16 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF871_2 Preliminary data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 5 March 2009 17 of 18 BLF871 NXP Semiconductors UHF power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.2.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Broadband RF figures. . . . . . . . . . . . . . . . . . . . 7 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ruggedness in class-AB operation. . . . . . . . . . 9 Impedance information . . . . . . . . . . . . . . . . . . . 9 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 5 March 2009 Document identifier: BLF871_2