TFF1004HN/N1 Integrated mixer oscillator PLL for satellite LNB Rev. 01 — 25 August 2008 Product data sheet 1. General description The TFF1004HN/N1 is an integrated downconverter for use in Low Noise Block (LNB) convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 2. Features n n n n n n Pre-amplifier, mixer, buffer amplifier and PLL synthesizer in one IC Alignment-free concept Crystal controlled LO frequency generation Low phase noise Switched LO frequency (9.75 GHz and 10.6 GHz) Low spurious 3. Applications n Ku band LNB converters for digital satellite reception (DVB-S) 4. Quick reference data Table 1. Quick reference data VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified. Symbol Parameter VCC ICC NFSSB supply voltage supply current single sideband noise figure Conditions Min Typ Max Unit RF input and IF output AC coupled [1] 3.0 3.3 RF input and IF output AC coupled [1][2] - 102 125 mA [2][3][4][5 - 9 10 dB - 9 10 dB low band 3.6 V ] high band [2][4][5][6 ] Gconv conversion gain low band [2][3][5] 26 32 35 dB high band [2][5][6] 26 32 35 dB TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB Table 1. Quick reference data …continued VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified. Symbol Parameter IP3O Conditions Min Typ Max Unit output third-order intercept point carrier power = −10 dBm (measured at output); worst case is given. low band [2][3][7][8 10 - - dBm 10 - - dBm ] high band [2][6][7][8 ] [1] DC values. [2] See corresponding graph in Section 13.1.2 “Parameters as function of temperature”. [3] Low band conditions: PRF_IN = −50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz. [4] Measured with band-pass filter according to Figure 4 and Figure 5. [5] See corresponding graph in Section 13.1.1 “Parameters as function of frequency”. [6] High band conditions: PRF_IN = −50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz. [7] measured in 50 Ω environment and calculated back towards a 75 Ω environment. [8] measured with carriers depicted in Table 10. 5. Ordering information Table 2. Ordering information Type number TFF1004HN/N1 Package Name Description Version HVQFN24 plastic, heatsink very thin quad flat package; no leads; 24 terminals; body 4 × 4 × 0.85 mm SOT616-1 TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 2 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 6. Block diagram VCC(MIX) 24 14 20 RF1_GND 15 mixer 21 RF_IN RF2_GND RF2_GND 17 23 18 XO_TANK XO_XTAL XO_GND 5 4 VCC(IF) IF_GND IF_GND IF_OUT IF_GND IF_GND 10 12 VCO_GND VCC(PLL) 16 22 REG_V_VCO VCC(XO) 13 19 RF1_GND PLL_LF 11 2 PFD CHARGE PUMP 6 3 TFF1004HN BANDGAP VOLTAGE REFERENCE CIRCUIT DIVIDER 7 LO_SEL Fig 1. 1 8 PLL_GND GND BG_GND 9 VCC(BG) 001aai387 TFF1004HN/N1 block diagram 7. Functional diagram LO_SEL TFF1004HN/N1 VCC mixer IF gain PLL 9.75/10.6 GHz 001aai388 Fig 2. Functional diagram TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 3 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 8. Pinning information 19 RF1_GND 20 RF1_GND 21 RF_IN 22 RF2_GND terminal 1 index area 23 RF2_GND 24 VCC(MIX) 8.1 Pinning PLL_GND 1 18 IF_GND VCC(PLL) 2 17 IF_GND XO_GND 3 VCC(XO) 4 XO_TANK 5 14 IF_GND XO_XTAL 6 13 VCC(IF) VCO_GND 12 9 VCC(BG) PLL_LF 11 8 REG_V_VCO 10 7 LO_SEL BG_GND TFF1004HN/N1 16 IF_OUT 15 IF_GND 001aai389 Transparent top view Fig 3. Pin configuration 8.2 Pin description Table 3. Pin description Symbol Pin Description GND 0 ground (exposed die pad) PLL_GND 1 ground [1] VCC(PLL) 2 PLL supply voltage. Decouple against pin 1. XO_GND 3 ground [1] VCC(XO) 4 crystal oscillator supply voltage. Decouple against pin 3. XO_TANK 5 crystal oscillator tank XO_XTAL 6 50 MHz. Crystal connection. Connect other crystal terminal to GND. LO_SEL 7 select high or low band [2] BG_GND 8 ground [1] VCC(BG) 9 internal regulator supply. Decouple against pin 8. REG_V_VCO 10 decoupling of the internal VCO supply PLL_LF 11 loop filter PLL. Connect loop filter between this pin and pin 10. VCO_GND 12 ground [1] VCC(IF) 13 IF-buffer supply voltage. Decouple against pin 14. IF_GND 14, 15, 17, 18 ground [1] IF_OUT 16 IF-buffer output. Connect RF choke coil between this pin and pin 13. RF1_GND 19, 20 ground [1] TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 4 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB Table 3. Pin description …continued Symbol Pin Description RF_IN 21 RF input. AC coupling required. RF2_GND 22, 23 ground [1] VCC(MIX) 24 mixer supply voltage. Decouple against pin 23. [1] Connect this to the exposed die pad. [2] See Table 4. Table 4. LO_SEL LO_SEL (pin 7) local oscillator frequency (V) (GHz) 0 9.75 VCC 10.60 open 10.60 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCC(BG) VCC(IF) Conditions Min Max Unit band gap supply voltage −0.5 +3.6 V IF supply voltage −0.5 +3.6 V VCC(PLL) PLL supply voltage −0.5 +3.6 V VCC(XO) XO supply voltage −0.5 +3.6 V Tj junction temperature - 125 °C Tstg storage temperature - 125 °C 10. Recommended operating conditions Table 6. Operating conditions Symbol Parameter Tamb Conditions Min Typ Max Unit ambient temperature −40 +25 +85 °C Z0 characteristic impedance - 50 - Ω Table 7. Selection of crystal Mode Frequency Load capacitor Frequency stability (MHz) (pF) (ppm) fundamental 50 0 [1] ± 50 [2] AT-cut 100 not used 50 [1] ± 50 AT-cut 100 used [3] overtone 0 [2] Maximum drive level Tank circuit (µW) [1] Series resonant. [2] The LO will have the same frequency stability. [3] The components of the tank circuit are selected to form a parallel resonance at 50 MHz. The input capacitance at XO_TANK (pin 5) is 3 pF. TFF1004HN_N1_1 Product data sheet Quartz cut © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 5 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB The tank circuit should have no DC path between VCC(XO) (pin 4) and XO_TANK (pin 5), therefore the inductive branch should contain a DC block. 11. Thermal characteristics Table 8. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 24 K/W 12. Characteristics Table 9. Characteristics VCC = 3.3 V; Tamb = 25 °C; fLO = 9.75 GHz or 10.6 GHz; fxtal = 50 MHz; Z0 = 50 Ω unless otherwise specified. Symbol VCC Parameter supply voltage Conditions RF input and IF output AC coupled 3.0 3.3 [1][2] - 102 125 mA low band [2][3] - - 2.5 °RMS high band [2][4] - - 2.5 °RMS [2][3][5][6] - 9 10 dB [2][4][5][6] - 9 10 dB low band [2][3][6] 26 32 35 dB high band [2][4][6] ICC supply current RF input and IF output AC coupled ϕnλ(itg) integrated phase noise density integration offset frequency = 10 kHz to 13 MHz; loop bandwidth = crossover bandwidth NFSSB Gconv ∆Gconv single sideband noise low band figure high band conversion gain conversion gain variation Min Typ Max Unit [1] 26 32 35 dB low band - - 5 dB high band [2][4] - - 5 dB in every 36 MHz band; high band and low band [6] - - 1.5 dB - - −10 dB - - −10 dB s11 input reflection coefficient with optimum matching structure s22 output reflection coefficient fIF_OUT = 950 MHz to 2150 MHz; Z0 = 75 Ω [7] IP3O output third-order intercept point carrier power = −10 dBm (measured at output); worst case is given. αL(IF)lo local oscillator RF leakage local oscillator IF leakage low band [2][3][7][8] 10 - - dBm high band [2][4][7][8] 10 - - dBm center frequency = local oscillator frequency; span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz low band [2][3][9] - - −35 dBm high band [2][4][9] - - −35 dBm low band [2][3][10] - - −15 dBm high band [2][4][10] - - −15 dBm [10] - - −60 dBm center frequency = local oscillator frequency; span = 100 MHz; RBW = 50 kHz; VBW = 200 kHz αresp(sp)IF_OUT spurious response on center frequency = 1.6 GHz; pin IF_OUT span frequency = 1.2 GHz; RBW = 30 kHz; VBW = 100 kHz TFF1004HN_N1_1 Product data sheet V [2][3] [6] αL(RF)lo 3.6 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 6 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB [1] DC values. [2] See corresponding graph in Section 13.1.2 “Parameters as function of temperature”. [3] Low band conditions: PRF_IN = −50 dBm; fLO = 9.75 GHz; fRF_IN = 10.70 GHz to 11.70 GHz; fIF_OUT = 950 MHz to 1950 MHz. [4] High band conditions: PRF_IN = −50 dBm; fLO = 10.6 GHz; fRF_IN = 11.70 GHz to 12.75 GHz; fIF_OUT = 1100 MHz to 2150 MHz. [5] Measured with band-pass filter according to Figure 4 and Figure 5. [6] See corresponding graph in Section 13.1.1 “Parameters as function of frequency”. [7] measured in 50 Ω environment and calculated back towards a 75 Ω environment. [8] measured with carriers depicted in Table 10. [9] measured with spectrum analyzer at RF_IN (pin 21); IF_OUT (pin 16) terminated with 50 Ω. [10] measured with spectrum analyzer at IF_OUT (pin 16); RF_IN (pin 21) terminated with 50 Ω via DC block. Table 10. Band Low High IP3O carriers RF frequency Carrier #1 RF frequency Carrier #2 IP3O low frequency IF frequency Carrier#1 IF frequency Carrier#2 IP3O high frequency (GHz) (GHz) (MHz) (MHz) (MHz) (MHz) 10.74 10.78 950 990 1030 1070 11.62 11.66 1830 1870 1910 1950 11.74 11.78 1100 1140 1180 1220 12.67 12.71 2030 2070 2110 2150 001aai390 40 001aai391 0 s12 (dB) (dB) 0 s21 −1 s11 s22 −2 −40 −3 s12 −80 −4 s21 −120 −5 0 5 10 15 20 9 10 11 12 f (GHz) Fig 4. Filter SEI FSCM:67021 14 f (GHz) Fig 5. Filter SEI FSCM:67021 TFF1004HN_N1_1 Product data sheet 13 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 7 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 13. Application information L2 27 nH IF_OUT C11 100 pF C5 100 nF IF_GND 18 RF1_GND IF_GND 17 IF_OUT 16 IF_GND 15 IF_GND 14 VCC(IF) 13 19 12 VCO_GND C8 1 nF RF1_GND RF_IN RF_IN 20 11 21 10 PLL_LF C10 220 nF C9 820 pF REG_V_VCO R1 120 Ω TFF1004HN RF2_GND 22 9 VCC(BG) VCC 3.3 V C4 100 nF RF2_GND 23 8 24 7 VCC(MIX) C12 47 µF BG_GND LO_SEL LO_SEL C1 100 pF 1 2 3 PLL_GND VCC(PLL) 4 C3 100 nF C2 100 pF 5 XO_GND VCC(XO) 6 XO_TANK XO_XTAL C6 18 pF L1 470 nH X1 50 MHz; series ESR < 70 Ω C7 4.7 nF 001aai392 For list of components see Table 11. Fig 6. Application diagram of TFF1004HN/N1 Table 11. List of components The Printed Circuit Board (PCB) is a Rogers RO4223 (εr = 3.38); thickness = 0.51 mm. For application diagram, see Figure 6. Component Description Value C1 decoupling of RF and MIX domain 100 pF C2 decoupling of PLL domain 100 pF C3 decoupling of XO domain 100 nF C4 decoupling of BG domain 100 nF TFF1004HN_N1_1 Product data sheet Remarks © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 8 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB Table 11. List of components …continued The Printed Circuit Board (PCB) is a Rogers RO4223 (εr = 3.38); thickness = 0.51 mm. For application diagram, see Figure 6. Component Description Value C5 decoupling of IF domain 100 nF C6 XO_TANK circuit (only with overtone crystal) 18 pF C7 XO_TANK circuit, DC coupling (only with overtone crystal) 4.7 nF C8 REG_V_VCO decoupling 1 nF C9 loop filter 820 pF C10 loop filter 220 nF C11 output capacitor 100 pF C12 main supply decoupling and 22 kHz rejection 47 µF L1 XO_TANK circuit (only with overtone crystal) 470 nH L2 RF choke at 2.15 GHz 27 nH R1 loop filter 120 Ω X1 crystal; series resonant; ESR < 70 Ω 50 MHz [1] Remarks [1] [1] maximum value 1 nF [1] [1] See Table 7. UAF3000 3.3 V REGULATOR SUPPLY AND BAND/POLARIZATION SWITCHING horizontal polarization 1st STAGE LNA image reject filter vertical polarization LO_SEL VCC RF gain TFF1004HN/N1 mixer IF gain 2nd STAGE LNA 1st STAGE LNA PLL 9.75/10.6 GHz Fig 7. TFF1004HN/N1 in practice TFF1004HN_N1_1 Product data sheet 001aai393 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 9 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 13.1 Graphs 13.1.1 Parameters as function of frequency 001aai394 −60 001aai395 −60 ϕnλ (dBc/Hz) ϕnλ (dBc/Hz) −80 −80 −100 −100 −120 −120 −140 103 104 105 106 107 108 109 foffset (Hz) −140 103 VCC = 3.3 V; fLO = 9.75 GHz. Fig 8. 104 105 106 107 108 109 foffset (Hz) VCC = 3.3 V; fLO = 10.6 GHz. Phase noise density as function of offset frequency (low band); typical values 001aai396 10 NFSSB (dB) Fig 9. Phase noise density as function of offset frequency (high band); typical values 001aai397 34 Gconv (dB) 9 33 8 32 7 (1) (2) 31 (1) (2) 6 30 5 29 10 11 12 13 10 f (GHz) 12 13 f (GHz) (1) low band (1) low band (2) high band (2) high band VCC = 3.3 V. VCC = 3.3 V. Fig 10. Noise figure as function of frequency; typical values Fig 11. Conversion gain as function of frequency; typical values TFF1004HN_N1_1 Product data sheet 11 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 10 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 12.75 GHz 10.70 GHz 11.70 GHz +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 −5 −0.2 −2 −0.5 −135° −45° −1 1.0 −90° 001aai398 Tamb = 25 °C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 Ω. Fig 12. Input reflection coefficient (S11) without matching structure; typical values 90° 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 950 MHz 180° 0 0.2 0.5 2 5 2150 MHz −0.2 −135° 1 0° −45° −1 −90° 0 −5 −2 −0.5 10 1.0 001aai399 Tamb = 25 °C; ICC = 102 mA; VCC = 3.3 V; Z0 = 50 Ω. Fig 13. Output reflection coefficient (S22); typical values TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 11 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 13.1.2 Parameters as function of temperature 001aai400 160 ICC (mA) 120 80 40 0 −50 −20 10 40 70 100 Tamb (°C) VCC = 3.3 V. Fig 14. Supply current as function of temperature; typical values 001aai401 2.6 ϕnλ(itg) (° RMS) ϕnλ(itg) (° RMS) 2.4 2.4 2.2 2.2 2.0 2.0 1.8 −50 −20 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 9.75 GHz. 001aai402 2.6 1.8 −50 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz. Fig 15. Integrated phase noise density as function of temperature (low band); typical values Fig 16. Integrated phase noise density as function of temperature (high band); typical values TFF1004HN_N1_1 Product data sheet −20 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 12 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 001aai403 10 NFSSB (dB) NFSSB (dB) 9 9 8 8 7 7 6 6 5 −50 −20 10 40 70 100 Tamb (°C) 5 −50 VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz. Fig 17. Single sideband noise figure as function of temperature (low band); typical values 001aai405 35 Gconv (dB) 001aai404 10 −20 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1525 MHz. Fig 18. Single sideband noise figure as function of temperature (high band); typical values 001aai406 35 Gconv (dB) 34 34 33 33 32 32 31 31 30 −50 −20 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 9.75 GHz; fIF = 1525 MHz. Fig 19. Conversion gain as function of temperature (low band); typical values 30 −50 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz; fIF = 1385 MHz. Fig 20. Conversion gain as function of temperature (high band); typical values TFF1004HN_N1_1 Product data sheet −20 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 13 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 001aai407 5 ∆Gconv (dB) ∆Gconv (dB) 4 4 3 3 2 2 1 1 0 −50 −20 10 40 70 100 Tamb (°C) 0 −50 VCC = 3.3 V; fLO = 9.75 GHz. −20 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz. Fig 21. Conversion gain variation as function of temperature (low band); typical values 001aai409 15 001aai408 5 IP3O (dBm) Fig 22. Conversion gain variation as function of temperature (high band); typical values 001aai410 15 IP3O (dBm) 13 13 11 11 9 9 7 7 5 −50 −20 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 9.75 GHz. 5 −50 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz. Fig 23. Output third-order intercept point as function of temperature (low band); typical values Fig 24. Output third-order intercept point as function of temperature (high band); typical values TFF1004HN_N1_1 Product data sheet −20 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 14 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 001aai411 −40 αL(RF)lo (dBm) 001aai412 −40 αL(RF)lo (dBm) −42 −42 −44 −44 −46 −46 −48 −48 −50 −50 −20 10 40 70 100 Tamb (°C) −50 −50 VCC = 3.3 V; fLO = 9.75 GHz. 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz. Fig 25. Local oscillator RF leakage as function of temperature (low band); typical values 001aai413 −15 −20 αL(IF)lo (dBm) Fig 26. Local oscillator RF leakage as function of temperature (high band); typical values 001aai414 −15 αL(IF)lo (dBm) −17 −17 −19 −19 −21 −21 −23 −23 −25 −50 −20 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 9.75 GHz. −25 −50 10 40 70 100 Tamb (°C) VCC = 3.3 V; fLO = 10.6 GHz. Fig 27. Local oscillator IF leakage as function of temperature (low band); typical values Fig 28. Local oscillator IF leakage as function of temperature (high band); typical values TFF1004HN_N1_1 Product data sheet −20 © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 15 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 14. Package outline HVQFN24: plastic thermal enhanced very thin quad flat package; no leads; 24 terminals; body 4 x 4 x 0.85 mm A B D SOT616-1 terminal 1 index area A A1 E c detail X e1 C 1/2 e e 7 12 y y1 C v M C A B w M C b L 13 6 e e2 Eh 1/2 e 1 18 terminal 1 index area 24 19 X Dh 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D (1) Dh E (1) Eh e e1 e2 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 4.1 3.9 2.25 1.95 4.1 3.9 2.25 1.95 0.5 2.5 2.5 0.5 0.3 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT616-1 --- MO-220 --- EUROPEAN PROJECTION ISSUE DATE 01-08-08 02-10-22 Fig 29. Package outline SOT616-1 TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 16 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 15. Abbreviations Table 12. Abbreviations Acronym Description BG Band Gap DVB-S Digital Video Broadcasting by Satellite ESR Equivalent Series Resistance IC Integrated Circuit IF Intermediate Frequency Ku band K-under band LO Local Oscillator PFD Phase Frequency Detector PLL Phase-Locked Loop RBW Resolution BandWidth RF Radio Frequency VBW Video BandWidth VCO Voltage-Controlled Oscillator XO Crystal Oscillator 16. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes TFF1004HN_N1_1 20080825 Product data sheet - - TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 17 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 17. Legal information 17.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 17.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 18. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] TFF1004HN_N1_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 25 August 2008 18 of 19 TFF1004HN/N1 NXP Semiconductors Integrated mixer oscillator PLL for satellite LNB 19. Contents 1 2 3 4 5 6 7 8 8.1 8.2 9 10 11 12 13 13.1 13.1.1 13.1.2 14 15 16 17 17.1 17.2 17.3 17.4 18 19 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended operating conditions. . . . . . . . 5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application information. . . . . . . . . . . . . . . . . . . 8 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Parameters as function of frequency . . . . . . . 10 Parameters as function of temperature. . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 August 2008 Document identifier: TFF1004HN_N1_1