DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Transmitting applications in the UHF range with a nominal supply voltage up to 28 V. handbook, halfpage 4 c 1 3 b PINNING - SOT122A PIN SYMBOL DESCRIPTION 1 c collector 2 e emitter 3 b base 4 e emitter e 2 MAM229 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηC (%) CW, class-B 470 28 25 >6.5 >55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Feb 06 2 Philips Semiconductors Product specification UHF power transistor BLX94C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM collector-emitter voltage (peak value) VBE = 0 − 65 V VCEO collector-emitter voltage open base − 30 V VEBO emitter-base voltage open collector − 4 V IC collector current (DC) − 2.5 A IC(AV) average collector current − 2.5 A ICM peak collector current f > 1 MHz − 6 A Ptot total power dissipation ≤ Tmb = 25 °C − 60 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base (DC dissipation) Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 4 K/W Rth j-mb thermal resistance from junction to mounting base (RF dissipation) Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 2.7 K/W Rth mb-h thermal resistance from mounting base to heatsink Ptot = 20 W;Tmb = 82 °C; Th = 70 °C 0.6 K/W MBH096 10 MBH097 60 handbook, halfpage handbook, halfpage Ptot (W) 50 IC (A) (3) (2) 40 (1) 1 (2) 30 (1) 20 10−1 1 10 VCE (V) 10 102 0 Th (oC) (1) Continuous DC operation. (2) Continuous RF operation. (3) Short-time operation during mismatch. (1) Tmb = 25 °C. (2) Th = 70 °C. Fig.2 DC SOAR. 1996 Feb 06 50 Fig.3 Power derating curves. 3 100 Philips Semiconductors Product specification UHF power transistor BLX94C CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. − MAX. − UNIT V(BR)CES collector-emitter breakdown voltage VBE = 0; IC = 25 mA V(BR)CEO collector-emitter breakdown voltage open base; IC = 100 mA 30 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 mA 4 − − V VCEsat collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; note 1 − 1.5 − V ICES collector cut-off current VBE = 0; VCE = 30 V − − 10 mA ESBR second breakdown energy open base; L = 25 mH; f = 50 Hz 3 − − mJ RBE = 10 Ω; L = 25 mH; f = 50 Hz 3 − − mJ 65 V hFE DC current gain VCE = 5 V; IC = 1.5 A; note 1 15 50 − fT transition frequency VCB = 28 V; IE = −1.5 A; f = 500 MHz; note 1 − 1.1 − fT VCB = 28 V; IE = −4 A; f = 500 MHz; note 1 − 0.75 − fT Cc collector capacitance VCB = 28 V; IE = ie = 0; f = 1 MHz − 33 − pF Cre feedback capacitance VCE = 28 V; IC = 20 mA; f = 1 MHz; − 18 − pF Cc-s collector-stud capacitance − 1.2 − pF Note 1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02. MBH099 100 MBH098 75 handbook, halfpage handbook, halfpage Cc (pF) VCE = 25 V hFE 50 50 5V 25 0 0 2 0 IC (A) 0 4 20 VCB (V) 40 Measured under pulsed conditions; tp ≤ 200 µs; δ ≤ 0.02;Tj = 25 °C. (1) VCE = 25 V. (2) VCE = 5 V. IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 1996 Feb 06 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLX94C MBH106 1,5 handbook, full pagewidth fT (GHz) 1 0.5 0 0 −1 −2 −3 IE (A) VCB = 28 V; Tj = 25 °. Fig.6 Transmission frequency as a function of emitter current; typical values. 1996 Feb 06 5 −4 Philips Semiconductors Product specification UHF power transistor BLX94C APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter, class-B test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) PS (W) Gp (dB) IC (A) ηC (%) CW, class-B 470 28 25 <5.6 typ. 4.7 >6.5 typ. 7.25 <1.62 typ. 1.54 >55 typ. 58 MBH101 10 handbook, halfpage MBH100 100 40 handbook, halfpage PL (W) η (%) Gp Gp (dB) η 5 30 50 20 10 0 20 0 PL (W) 0 40 0 0 2 VCE = 28 V. ICQ = 200 mA. f = 470 MHz. VCE = 28 V. Th = 25 °C. f = 470 MHz. Fig.7 Fig.8 Power gain and efficiency as functions of load power; typical values. 1996 Feb 06 6 4 6 PS (W) 8 Load power as a function of source power; typical values. Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth BLX94C C2 input ZS = 50 Ω ,, C1 ,, C7 L4 L1 T.U.T. L3 R1 C3 C8 C4 output ZL = 50 Ω L2 C5 R2 C6 MBH107 L5 +VCC Fig.9 Class-B test circuit at f = 470 MHz. List of components (see Figs 9 and 10) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C2, C8 film dielectric trimmer capacitor 2 to 9 pF C3, C4 chip capacitor 15 pF C5 feed through capacitor 100 pF C6 polyester capacitor 33 nF C6 chip capacitor 22 nF, 63 V C7 film dielectric trimmer capacitor 2 to 18 pF L1 stripline; note 1 length 41.1 mm width 5 mm L2 13 turns enamelled 0.5 mm copper wire int. diameter 4 mm close wound L3 2 turns 1 mm copper wire int. diameter 4 mm winding pitch 1.5 mm leads 2 x 5 mm L4 stripline; note 1 length 52.7 mm width 5 mm L5 Ferroxcube choke coil 750 Ω; ± 20% R1 carbon resistor 1Ω R2 carbon resistor 10 Ω CATALOGUE No. 2222 809 09002 2222 809 09003 4312 020 36640 Note 1. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (εr = 2.74); thickness 1.45 mm. 1996 Feb 06 7 Philips Semiconductors Product specification UHF power transistor BLX94C 146 handbook, full pagewidth 41.1 52.7 rivet (4x) 47 L2 input 50 Ω R1 C1 output 50 Ω C3 C7 L4 L1 C2 C6 C4 C8 L3 R2 C5 L5 VCC MBH108 Dimensions in mm. The components are located on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.10 Component layout and printed-circuit board for 470 MHz class-B test circuit. 1996 Feb 06 8 Philips Semiconductors Product specification UHF power transistor BLX94C MBH102 MBH103 3 30 handbook, halfpage handbook, halfpage ri, xi (Ω) PL Th = 50 oC (W) xi 2 70 oC 1 ri 90 oC 20 0 −1 −2 100 10 1 10 VSWR 102 300 f (MHz) 500 VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. VCE = 28 V; f = 470 MHz; Rth mb-h = 0.6 K/W. Fig.12 Input impedance as a function of frequency (series components); typical values. Fig.11 Load power as a function of VSWR. MBH104 8 MBH105 24 handbook, halfpage handbook, G halfpage p (dB) 20 RL, XL (Ω) 16 XL 12 6 8 RL 4 4 100 300 f (MHz) 0 100 500 300 f (MHz) 500 VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. VCE = 28 V; PL = 25 W; Th = 25 °C; Class-B operation. Fig.13 Load impedance as a function of frequency (series components); typical values. Fig.14 Power gain as a function of frequency; typical values. 1996 Feb 06 9 Philips Semiconductors Product specification UHF power transistor BLX94C PACKAGE OUTLINE 5.9 5.5 (4x) handbook, full pagewidth 1.52 5 4 0.14 8.8 (4x) min metal BeO ceramic 8-32 UNC 1 3 27.6 24.9 6.35 3.0 3.3 8.5 1.6 max 2 3.25 2.80 7.6 max 27.6 24.9 MSA246 Dimensions in mm. Torque on nut: min. 0.75 Nm; max. 0.85 Nm. Mounting hole to have no burrs at either end. De-burring must leave surface flat; do not chamfer or countersink either end of hole. When locking is required an adhesive is preferred instead of a lock washer. Fig.15 SOT122A. 1996 Feb 06 10 12.0 11.0 5.6 max Philips Semiconductors Product specification UHF power transistor BLX94C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 06 11