SQM85N15-19 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 150 RDS(on) () at VGS = 10 V • TrenchFET® Power MOSFET 0.019 ID (A) 85 Configuration • Package with Low Thermal Resistance Single • AEC-Q101 Qualifiedd D • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC TO-263 G G D S Top View S N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM85N15-19-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current Continuous Source Current (Diode ID TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V 85 50 IS 120 IDM 140 IAS 52 EAS 135 PD TC = 125 °C UNIT 375 125 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Case (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square P.C.B. (Fr-4 material). d. Parametric verification ongoing. S11-2028-Rev. D, 17-Oct-11 1 Document Number: 68668 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM85N15-19 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 150 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) VGS = 0 V VDS = 150 V - - 1 VGS = 0 V VDS = 150 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 150 V, TJ = 175 °C - - 300 VGS = 10 V VDS 5 V 120 - - VGS = 10 V ID = 30 A - 0.016 0.019 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.039 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.051 - 79 - - 5026 6285 gfs VDS = 15 V, ID = 30 A V nA μA A S Dynamicb Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 450 565 Reverse Transfer Capacitance Crss - 165 205 Total Gate Chargec Qg - 80 120 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and VDS = 75 V, ID = 85 A f = 1 MHz td(on) tr Timec VGS = 10 V VDS = 25 V, f = 1 MHz td(off) VDD = 75 V, RL = 0.88 ID 85 A, VGEN = 10 V, Rg = 1 tf pF - 33 - - 12 - nC 0.5 1.6 2.6 - 17 26 - 24 36 - 35 53 - 11 17 - - 140 A - 0.9 1.5 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 85 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2028-Rev. D, 17-Oct-11 2 Document Number: 68668 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM85N15-19 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 180 140 V GS = 10 V thru 7 V 120 150 ID - Drain Current (A) ID - Drain Current (A) V GS = 6 V 120 90 60 100 80 60 40 T C = 25 °C V GS = 5 V 30 20 T C = 125 °C V GS = 4 V, 3 V 0 T C = - 55 °C 0 0 4 8 12 16 20 0 2 4 8 10 Transfer Characteristics 150 0.05 120 0.04 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) Output Characteristics 90 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) T C = - 55 °C T C = 25 °C 60 T C = 125 °C 30 0.03 V GS = 10 V 0.02 0.01 0 0 0 12 24 36 48 60 0 20 40 ID - Drain Current (A) 60 80 100 120 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 10 000 VGS - Gate-to-Source Voltage (V) ID = 85 A C - Capacitance (pF) 8000 6000 Ciss 4000 2000 8 V DS = 75 V 6 4 2 Coss Crss 0 0 0 20 40 60 80 0 100 20 30 40 50 60 70 80 90 100 Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Capacitance S11-2028-Rev. D, 17-Oct-11 10 Gate Charge 3 Document Number: 68668 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM85N15-19 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 3.0 ID = 30 A 10 IS - Source Current (A) V GS = 10 V (Normalized) RDS(on) - On-Resistance 2.5 2.0 1.5 T J = 150 °C 1 T J = 25 °C 0.1 0.01 1.0 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 1.0 0.20 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.5 0.16 0.12 0.08 - 0.5 ID = 5 mA - 1.0 ID = 250 μA - 1.5 T J = 150 °C 0.04 0 - 2.0 T J = 25 °C 0 0 2 4 6 8 - 2.5 - 50 10 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 200 VDS - Drain-to-Source Voltage (V) ID = 10 mA 190 180 170 160 150 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S11-2028-Rev. D, 17-Oct-11 4 Document Number: 68668 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM85N15-19 www.vishay.com Vishay Siliconix I D - Drain Current (A) THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited 100 Limited by RDS(on)* 100 µs 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S11-2028-Rev. D, 17-Oct-11 5 Document Number: 68668 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM85N15-19 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68668. S11-2028-Rev. D, 17-Oct-11 6 Document Number: 68668 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263 (D2PAK): 3-LEAD INCHES -B- L2 -A- c2 D2 D3 A E E1 K D D1 E3 6 L c* L3 c1 A A b2 b e c Detail “A” E2 c c1 L1 b b1 M 0° L4 -5 ° 0.010 M A M 2 PL MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.685 0.023 0.027 0.584 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e DETAIL A (ROTATED 90°) SECTION A-A MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 0.254 BSC - 0.050 ECN: T10-0738-Rev. J, 03-Jan-11 DWG: 5843 Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Document Number: 71198 Revison: 03-Jan-11 www.vishay.com 1 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000