*R oH S CO M PL IA NT TISP8210MD BUFFERED P-GATE SCR DUAL TISP8211MD BUFFERED N-GATE SCR DUAL COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION TISP821xMD Overvoltage Protectors High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8210MD 8-SOIC Package (Top View) TISP8210MD Negative Overvoltage Protector – Wide 0 to -110 V Programming Range – Low +5 mA Max. Gate Triggering Current – High -150 mA Min. Holding Current G1 1 8 NC K1 2 7 A K2 3 6 A G2 4 5 NC MDRXAKC TISP8211MD Positive Overvoltage Protector – Wide 0 to +110 V Programming Range – Low -5 mA Max. Gate Triggering Current – +20 mA Min. Holding Current NC - No internal connection TISP8210MD Device Symbol Rated for International Surge Wave Shapes K1 IPPSM Wave Shape Standard 2/10 GR-1089-CORE 167 10/700 ITU-T K.20/21/45 70 10/1000 GR-1089-CORE 60 A G1 A A G2 Circuit Application Diagram K2 SDRXAJB SLIC PROTECTION TISP8211MD 8-SOIC Package (Top View) Tip C2 100 nF C1 100 nF G1 1 8 NC A1 2 7 K A2 3 6 K G2 4 5 NC MDRXALC NC - No internal connection TISP8211MD Device Symbol Ring A1 TISP8210MD TISP8211MD +V BAT - VBAT G1 AI-TISP8-003-a K K G2 A2 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JANUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. SDRXAKB TISP821xMD Overvoltage Protectors Description The TISP8210MD / TISP8211MD protector combination has been designed to protect dual polarity supply rail SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been designed using the latest understanding of programmable protector technology to maximize performance. The TISP8210MD and TISP8211MD are complementary programmable protection devices. The program or gate pins (G1, G2) are connected to the positive and negative SLIC battery supplies to give protection which will track the SLIC supply levels. The integrated transistor buffer is an essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary loading of the power supply. The TISP8210MD / TISP8211MD combination is designed to be used in conjunction with the 12.5 Ω Bourns® 4A12P-1AH-12R5 Line Protection Module (LPM). With this solution the application should pass Telcordia GR-1089-CORE testing with the 4A12P-1AH-12R5 acting as the overcurrent protector and coordination element. The TISP® device plus LPM solution is designed to work in harmony with the system primary protectors. GR-1089-CORE issue 3 lists test to allow for three types of primary protection: Carbon Block (1000 V); Gas Discharge Tube (600 V) and Solid State (400 V). This solution is designed to be used with the GDT and Solid State options. Under lightning conditions the current through the 12.5 Ω LPM will be 48 A (600 V / 12.5 Ω), which is well within the 60 A capability of the TISP8210MD / TISP8211MD combination. How to Order Device Package Carrier 8-SOIC Embossed Tape Reeled TISP8210MD T I SP 8 2 1 1 M D For Lead-Free Termination Finish Order As Marking Code TISP8210MDR-S 8210M T IS P 82 11 M D R- S 8 21 1M Standard Quantity 2500 TISP8210MD Absolute Maximum Ratings, TA = 25 °C Sy m b o l Value U nit Repetitive peak off-state voltage, VGK = 0 R at i n g VDRM -120 V Repetitive peak reverse voltage, VGA = -70 V VRRM 120 IPPSM -167 -70 -60 A ITSM -11 -6.5 -3.4 -1.4 -1.3 A TJ -55 to +150 °C Tstg -65 to +150 °C Non-repetitive peak impulse current (see Note 1) 2/10 μs (Telcordia GR-1089-CORE, 2/10 μs voltage wave shape) 5/310 μs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45) 10/1000 μs (Telcordia GR-1089-CORE, 10/1000 μs voltage wave shape) Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2) 100 ms 1s 5s 300 s 900 s Junction temperature Storage temperature range NOTES: 1. Initially the protector must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 2. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD. JANUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP821xMD Overvoltage Protectors TISP8211MD Absolute Maximum Ratings, TA = 25 °C Sy m b o l Value U nit Repetitive peak off-state voltage, VGA = 0 R at i n g VDRM 120 V Repetitive peak reverse voltage, VGK = 70 V VRRM -120 IPPSM 167 70 60 A ITSM 11 6.5 3.4 1.4 1.3 A TJ -55 to +150 °C Tstg -65 to +150 °C Non-repetitive peak impulse current (see Note 3) 2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape) 5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45) 10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape) Non-repetitive peak on-state current, 50/60 Hz (see Notes 3 and 4) 100 ms 1s 5s 300 s 900 s Junction temperature Storage temperature range NOTES: 3. Initially the protector must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 4. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD. Recommended Operating Conditions Min Typ C1, C 2 Gate decoupling capacitor See Figure 3 1 00 22 0 Max Unit nF R1, R 2 Series resistance for Telcordia GR-1089-CORE 10 12 .5 Ω TISP8210MD Electrical Characteristics, TA = 25 °C Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off-state current VD = VDRM, VGK = 0 -5 µA IRRM Repetitive peak reverse current VR = VRRM, VGA = -70 V 5 µA V(BO) Breakover voltage IH Holding current IGT Gate trigger current CO Off-state capacitance dv/dt = -250 V/ms, RSOURCE = 300 Ω, VGA = -80 V (IK) IT = -1 A, di/dt = 1 A/ms, VGA = -80 V - 82 - 15 0 V mA (IK) IT = -5 A, tp(g) ≥ 20 µs, VGA = -80 V 5 mA f = 1 MHz, Vd = 1 V, VD = ±2 V 40 pF TISP8211MD Electrical Characteristics, TA = 25 °C Max Unit IDRM Repetitive peak off-state current Parameter VD = VDRM, VGA = 0 5 µA IRRM Repetitive peak reverse current VR = VRRM, VGK = 70 V -5 µA V(BO) Breakover voltage dv/dt = 250 V/ms, RSOURCE = 300 Ω, VGK = 80 V 82 IH Holding current IGT Gate trigger current CO Off-state capacitance Test Conditions (IA) IT = 1 A, di/dt = -1 A/ms, VGK = 80 V Min Typ 20 V mA (IA) IT = 5 A, tp(g) ≥ 20 µs, VGK = 80 V -5 mA f = 1 MHz, Vd = 1 V, VD = ±2 V 30 pF Thermal Characteristics Parameter RθJA Junction to ambient thermal resistance Test Conditions Ptot = 0.52 W, TA = 70 °C, 5 cm 2, FR4 PCB JANUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Min Typ Max U nit 16 0 °C/W TISP821xMD Overvoltage Protectors Parameter Measurement Information +i Quadrant I Blocking Characteristic V GK(BO) V GA -v VD IR IRRM ID VR V RRM +v IH V(BO) ITSM Quadrant III IPPSM Switching Characteristic PM8XACBa -i Figure 1. TISP8210MD KA Terminal Characteristic +i Quadrant I IPPSM Switching Characteristic ITSM V(BO) IH -v V RRM VR ID IR IRRM +v VD V GK V GA(BO) Quadrant III Blocking Characteristic PM8XABBa -i Figure 2. TISP8211MD AK Terminal Characteristic JANUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP821xMD Overvoltage Protectors Applications Information Primary Protection 0V Overcurrent Protection TISP8211MD C2 100 nF TISP8210MD RING SLIC TIP V BATH Telcordia GR-1089-CORE Issue 3 compliant LPM (Bourns 4A12P-1AH-12R5) C1 100 nF 0V AI-TISP8-004-a Figure 3. Typical Application Circuit JANUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116 Phone +1-951-781-5500 +41-41-7685555 +886-2-25624117 Fax +1-951-781-5700 +41-41-7685510 +886-2-25624116 Technical Assistance Region The Americas: Europe: Asia-Pacific: www.bourns.com Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. COPYRIGHT© 2006, BOURNS, INC. LITHO IN U.S.A. e 03/06 TSP0610 JANUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.