BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD743 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current B 1 ● 20 A Peak Collector Current C 2 ● Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD744B V CBO -110 -45 BD744B VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) V -90 BD744 -60 V -80 -100 BD744C Emitter-base voltage -70 BD744C BD744A UNIT -50 BD744 BD744A VALUE VEBO -5 V IC -15 A ICM -20 A IB -5 A Ptot 90 W Ptot 2 W ½LIC2 90 mJ Operating free air temperature range TA -65 to +150 °C Operating junction temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter TEST CONDITIONS MIN -45 BD744A -60 BD744B -80 BD744C -100 TYP MAX IC = -30 mA IB = 0 VCE = -50 V VBE = 0 BD744 -0.1 VCE = -70 V VBE = 0 BD744A -0.1 VCE = -90 V VBE = 0 BD744B -0.1 Collector cut-off VCE = -110 V VBE = 0 BD744C -0.1 current VCE = -50 V VBE = 0 TC = 125°C BD744 -5 VCE = -70 V VBE = 0 TC = 125°C BD744A -5 VCE = -90 V VBE = 0 TC = 125°C BD744B -5 VCE = -110 V VBE = 0 TC = 125°C BD744C Collector cut-off VCE = -30 V IB = 0 BD744/744A -0.1 current VCE = -60 V IB = 0 BD744B/744C -0.1 VEB = -5 V IC = 0 breakdown voltage Emitter cut-off current Forward current transfer ratio VCE = -4 V IC = -1 A VCE = -4 V IC = -5 A VCE = -4 V IC = -15 A (see Note 5) BD744 -0.5 20 IB = -0.5 A IC = -5 A -5 A IC = -15 A Base-emitter VCE = -4 V IC = -5 A voltage VCE = -4 V IC = -15 A VCE = -10 V IC = -1 A f = 1 kHz 25 VCE = -10 V IC = -1 A f = 1 MHz 5 current transfer ratio mA mA 150 5 IB = Small signal forward mA 40 (see Notes 5 and 6) saturation voltage current transfer ratio V -5 Collector-emitter Small signal forward UNIT -1 (see Notes 5 and 6) -3 -1 (see Notes 5 and 6) -3 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.4 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN td Delay time 20 ns tr Rise time IC = -5 A IB(on) = -0.5 A IB(off) = 0.5 A 120 ns ts Storage time VBE(off) = 4.2 V RL = 6 Ω tp = 20 µs, dc ≤ 2% 600 ns tf Fall time 300 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -4 V tp = 300 µs, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V TCS638AA 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -55°C 100 10 -0·1 -1·0 -10 -100 TCS638AB -10 IC = 10 IB tp = 300µs, duty cycle < 2% -1·0 -0·1 TC = -55°C TC = 25°C TC = 125°C -0·01 -0·1 -1·0 IC - Collector Current - A -10 -100 IC - Collector Current - A Figure 1. Figure 2. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS638AA tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% tp = 50 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 BD744 BD744A BD744B BD744C -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AA Ptot - Maximum Power Dissipation - W 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5