BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BD544B V CBO -60 -80 BD544C -100 BD544 -40 BD544A BD544B UNIT -40 BD544 BD544A VALUE VCEO -60 -80 V V -100 BD544C VEBO -5 IC -8 A Peak collector current (see Note 1) ICM -10 A W Emitter-base voltage Continuous collector current V Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 70 Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range TA -65 to +150 °C °C Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 4) BD544 -40 BD544A -60 BD544B -80 BD544C -100 TYP MAX V VCE = -40 V VBE = 0 BD544 -0.4 Collector-emitter VCE = -60 V VBE = 0 BD544A -0.4 cut-off current VCE = -80 V VBE = 0 BD544B -0.4 VCE = -100 V VBE = 0 BD544C -0.4 Collector cut-off VCE = -30 V IB = 0 BD544/544A -0.7 current VCE = -60 V IB = 0 BD544B/544C -0.7 VEB = -5 V IC = 0 Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -1 VCE = -4 V IC = -1 A VCE = -4 V IC = -3 A VCE = -4 V IC = -5 A IB = -0.3 A IC = -3 A IB = -1 A IC = -5 A IB = -1.6 A IC = - 8A -4 V IC = -5 A VCE = UNIT mA mA mA 60 (see Notes 4 and 5) 40 15 -0.5 (see Notes 4 and 5) -0.5 V -1 (see Notes 4 and 5) -1.4 VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 µs toff Turn-off time VBE(off) = 4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS634AI VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 -0·1 -1·0 -10 TCS634AE -10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = -300 mA IC = -1 A IC = -3 A IC = -6 A -1·0 -0·1 -0·01 -0·001 IC - Collector Current - A -0·01 -0·1 -1·0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·2 TCS634AF VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -1·1 -1·0 -0·9 -0·8 -0·7 -0·6 -0·1 -1·0 -10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS634AF -1·0 -0·1 -0·01 -1·0 BD544 BD544A BD544B BD544C -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AD Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5