BOURNS BUX85

BUX85
NPN SILICON POWER TRANSISTOR
●
40 W at 25°C Case Temperature
●
2 A Continuous Collector Current
●
3 A Peak Collector Current
●
Typical tf = 200 ns at 25°C
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
V
Collector-base voltage (IE = 0)
VCBO
1000
Collector-emitter voltage (VBE = 0)
VCES
1000
V
Collector-emitter voltage (IB = 0)
V CEO
450
V
A
IC
2
Peak collector current (see Note 1)
ICM
3
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
40
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous collector current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BUX85
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
ft
Cob
NOTES: 2.
3.
4.
5.
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC =
0.1 A
L = 25 mH
Collector-emitter
VCE = 1000 V
VBE = 0
cut-off current
VCE = 1000 V
VBE = 0
VEB =
5V
IC = 0
VCE =
5V
IC = 0.1 A
IC = 0.3 A
Emitter cut-off
current
Forward current
transfer ratio
IB =
0.03 A
saturation voltage
IB =
0.2 A
IC =
1A
IB =
0.2 A
IC =
1A
VCE =
10 V
IC = 0.2 A
VCB =
20 V
IE = 0
saturation voltage
Current gain
bandwidth product
Output capacitance
(see Note 2)
TYP
MAX
450
0.2
TC = 125°C
1
(see Notes 3 and 4)
UNIT
V
1
Collector-emitter
Base-emitter
MIN
mA
mA
35
0.8
(see Notes 3 and 4)
1
(see Notes 3 and 4)
1.1
f = 0.1 MHz
V
V
12
MHz
60
pF
Inductive loop switching measurement.
These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
2.5
°C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
ton
Turn on time
ts
Storage time
tf
Fall time
tf
†
Fall time
TEST CONDITIONS
†
IC = 1 A
IB(on) = 0.2 A
VCC = 250 V
(see Figures 1 and 2)
IC = 1 A
IB(on) = 0.2 A
VCC = 250 V
TC = 95°C
MIN
IB(off) = -0.4 A
IB(off) = -0.4 A
MAX
0.25
0.5
UNIT
µs
1.8
µs
0.2
µs
0.4
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUX85
NPN SILICON POWER TRANSISTOR
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc = 250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
C
90%
90%
E
IC
A - B = td
B - C = tr
B
E - F = tf
10%
10%
F
0%
D - E = ts
A - C = ton
D - F = t off
90%
D
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BUX85
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP741AJ
100
ICES - Collector Cut-off Current - µA
hFE - Typical DC Current Gain
10
1·0
0·1
1·0
TCP741AQ
10
VCE = 5 V
TC = 25°C
5·0
VCE = 1000 V
1·0
0·1
0·01
0·001
-60
-30
IC - Collector Current - A
0
30
60
90
120
150
TC - Case Temperature - °C
Figure 3.
Figure 4.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAP741AD
1·0
0·1
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUX85
NPN SILICON POWER TRANSISTOR
ZθJC / RθJC - Normalised Transient Thermal Impedance
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP741AL
1·0
50%
20%
10%
0·1
5%
duty cycle = t1/t2
Read time at end of t1,
TJ(max) - TC = PD(peak) ·
0·01
10-5
10-4
10-3
t1
t2
( )
10-2
ZθJC
RθJC
· R θJC(max)
10-1
100
t1 - Power Pulse Duration - s
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
BUX85
NPN SILICON POWER TRANSISTOR
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
0,64
0,41
2,90
2,40
5,28
4,88
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.