BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications. 1 2 3 16867 Electrostatic sensitive device. Observe precautions for handling. Features Mechanical Data • Small feedback capacitance • Low noise figure • High power gain Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Typ: BFR183TF Case: Plastic case (SOT 490) Weight: 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Part Marking BFR183TF Package RH SOT490 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 2 V Collector current IC 65 mA Base current IB 5 mA Ptot 200 mW Total power dissipation Test condition Tamb ≤ 60 °C Junction temperature Storage temperature range Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Document Number 85102 Rev. 2, 23-Sep-02 www.vishay.com 1 BFR183TF VISHAY Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Max Unit Collector cut-off current Parameter VCE = 15 V, VBE = 0 Test condition Symbol ICES Min Typ. 100 µA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 µA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA VCEsat DC forward current transfer ratio VCE = 6 V, IC = 5 mA hFE VCE = 8 V, IC = 20 mA 10 V 0.1 0.4 V 50 90 150 hFE 50 110 Test condition Symbol Min Typ. VCE = 8 V, IC = 15 mA, f = 500 MHz fT 7.2 GHz Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Transition frequency VCE = 8 V, IC = 30 mA, f = 500 MHz Max Unit fT 7.5 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.4 pF Collector-emitter capacitance VCE = 8 V, f = 1 MHz Cce 0.2 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.8 pF Noise figure VCE = 6 V, IC = 5 mA, ZS = 75 Ω, f = 10 MHz F 0.9 dB VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 900 MHz F 1.1 dB VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 1.75 GHz F 1.7 dB VCE = 8 V, ZS = 50 Ω, ZL = ZLopt, IC = 30 mA, f = 900 MHz Gpe 15.5 dB VCE = 8 V, ZS = 50 Ω, ZL = ZLopt, IC = 30 mA, f = 1.75 GHz Gpe 11 dB |S21e|2 15 dB Power gain Transducer gain Document Number 85102 Rev. 2, 23-Sep-02 VCE = 8 V, IC = 30 mA, f = 900 MHz, ZO = 50 Ω www.vishay.com 2 BFR183TF VISHAY Vishay Semiconductors Package Dimensions in mm or Inches (mm) ISO Method E 16866 Document Number 85102 Rev. 2, 23-Sep-02 www.vishay.com 3 BFR183TF VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85102 Rev. 2, 23-Sep-02 www.vishay.com 4