VISHAY SI1406DH-T1-E3

Si1406DH
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.065 @ VGS = 4.5 V
3.9
D TrenchFETr Power MOSFETS
D 1.8-V Rated
D Thermally Enhanced SC-70
Package
20
0.075 @ VGS = 2.5 V
3.6
APPLICATIONS
0.096 @ VGS = 1.8 V
3.2
D Load Switching
D PA Switch
D Level Switch
Pb-free
Available
SOT-363
SC-70 (6-LEADS)
1
6
D
D
2
5
D
Marking Code
AB
G
3
4
XX
YY
D
Lot Traceability
and Date Code
S
Part # Code
Top View
Ordering Information: Si1406DH-T1
Si1406DH-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
3.1
3.9
2.8
2.2
IDM
Continuous Diode Current (Diode Conduction)a
10
1.4
A
0.9
1.56
1.0
0.81
0.52
TJ, Tstg
Unit
−55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
60
80
100
125
34
45
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
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Si1406DH
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VDS = VGS, ID = 250 mA
0.45
Typ
Max
Unit
1.2
V
"100
nA
Static
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
On-State Drain
VDS = 0 V, VGS = "8 V
IDSS
Currenta
ID(on)
Drain-Source
Drain
Source On
On-State
State Resistancea
Diode Forward Voltagea
1
VDS = 20 V, VGS = 0 V, TJ = 85_C
5
VDS = 5 V, VGS = 4.5 V
rDS(on)
Forward Transconductancea
VDS = 20 V, VGS = 0 V
8
mA
A
VGS = 4.5 V, ID = 3.9 A
0.053
0.065
VGS = 2.5 V, ID = 3.6 A
0.062
0.075
VGS = 1.8 V, ID = 2 A
0.079
0.096
gfs
VDS = 10 V, ID = 3.9 A
11
VSD
IS = 1.4 A, VGS = 0 V
0.75
1.1
4.9
7.5
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.95
Turn-On Delay Time
td(on)
27
41
tr
47
71
54
81
29
44
35
60
Rise Time
Turn-Off Delay Time
VDS = 10 V,, VGS = 4.5 V,, ID = 3.9 A
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery
trr
1.0
IF = 1.4 A. di/dt = 100/ms
nC
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
10
10
VGS = 5 thru 2 V
8
I D − Drain Current (A)
I D − Drain Current (A)
8
6
1.5 V
4
2
6
4
TC = 125_C
2
25_C
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS − Drain-to-Source Voltage (V)
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2
−55_C
3.5
4.0
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS − Gate-to-Source Voltage (V)
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
Si1406DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
800
0.16
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.20
0.12
VGS = 1.8 V
VGS = 2.5 V
0.08
600
Ciss
400
200
0.04
Coss
VGS = 4.5 V
0.00
Crss
0
0
2
4
6
8
0
10
4
ID − Drain Current (A)
Gate Charge
16
20
On-Resistance vs. Junction Temperature
1.8
VDS = 10 V
ID = 3.9 A
4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
12
VDS − Drain-to-Source Voltage (V)
5
3
2
1
VGS = 4.5 V
ID = 3.9 A
1.6
1.4
1.2
1.0
0.8
0
0
1
2
3
4
5
0.6
−50
6
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on) − On-Resistance ( W )
TJ = 150_C
1
TJ = 25_C
0.1
0.0
25
TJ − Junction Temperature (_C)
10
I S − Source Current (A)
8
0.16
ID = 2 A
ID = 3.9 A
0.12
0.08
0.04
0.00
0.2
0.4
0.6
0.8
1.0
VSD − Source-to-Drain Voltage (V)
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
1.2
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
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Si1406DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
30
0.1
25
ID = 250 mA
20
−0.0
Power (W)
V GS(th) Variance (V)
Threshold Voltage
0.2
−0.1
15
−0.2
10
−0.3
5
−0.4
−50
−25
0
25
50
75
100
125
0
0.001
150
0.01
1
0.1
TJ − Temperature (_C)
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA =100_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70684.
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Document Number: 70684
S-50366—Rev. B, 28-Feb-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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