SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4, Mini-Flat Package Features • SOP (Small Outline Package) • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO = 70 V • Low Saturation Voltage • Fast Switching Times • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100 " (2.54 mm) Spacing • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code U • CSA 93751 • BSI IEC60950 IEC60065 Applications High density mounting or space sensitive PCBs PLCs Telecommunication 1 4 C 2 3 E e3 i179065 The SFH690ABT/ AT/ BT/ CT family has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. Pb Pb-free The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH690 series is available only on tape and reel. There are 2000 parts per reel. Marking for SFH690AT is SFH690A; SFH690BT is SFH690B; SFH690CT is SFH690C; SFH690ABT will be marked as SFH690A or SFH690B. Order Information Part Remarks SFH690ABT Description C A CTR 50 - 300 %, SMD-4 SFH690AT CTR 50 - 150 %, SMD-4 SFH690BT CTR 100 - 300 %, SMD-4 SFH690CT CTR 100 - 200 %, SMD-4 For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Reverse voltage DC Forward current Surge forward current Power dissipation Document Number 83686 Rev. 1.5, 20-Apr-04 tp ≤ 10 µs Symbol Value Unit VR 6.0 V mA IF 50 IFSM 2.5 A Pdiss 80 mW www.vishay.com 1 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Output Symbol Value Unit Collector-emitter voltage Parameter Test condition VCE 70 V Emitter-collector voltage VEC 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW Symbol Value Unit VISO 3750 VRMS Creepage ≥ 5.33 mm Clearance ≥ 5.08 mm Insulation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDEO 0303, part 1 ≥ 175 Collector current tp ≤ 1.0 ms Power dissipation Coupler Parameter Test condition Isolation test voltage between emitter and detector (1.0 s) VIO = 500 V, Tamb = 25 °C Isolation resistance RIO ≥ 1012 Ω RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C VIO = 500 V, Tamb = 100 °C Junction temperature Soldering temperature max. 10 s Dip soldering distance to seating plane ≥1.5 mm Ptot–Power Dissipation (mW) 200 150 Phototransistor 100 50 Diode 0 0 18484 25 50 75 100 125 150 Tamb – Ambient Temperature ( qC ) Figure 1. Permissible Power Dissipation vs. Ambient Temperature www.vishay.com 2 Document Number 83686 Rev. 1.5, 20-Apr-04 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 5 mA Test condition Symbol VF 1.15 1.4 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0.0 V, f = 1.0 MHz Thermal resistance Min Unit CO 14 pF Rthja 750 K/W Output Parameter Test condition Symbol Collector-emitter leakage current VCE = 20 V Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz Min Typ. ICEO Thermal resistance Max Unit 100 nA CCE 2.8 pF Rthja 500 K/W Coupler Parameter Test condition Collector-emitter saturation voltage IF = 10 mA, IC = 2.0 mA Coupling capacitance f = 1.0 MHz Symbol Typ. Max Unit VCEsat Min 0.1 0.3 V CC 0.3 pF Current Transfer Ratio Parameter IC/IF Document Number 83686 Rev. 1.5, 20-Apr-04 Symbol Min IF = 5.0 mA, VCE = 5.0 V SFH690AT Test condition Part CTR 50 Typ. Max 150 Unit % SFH690BT CTR 100 300 % SFH690CT CTR 100 200 % SFH690ABT CTR 50 300 % www.vishay.com 3 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Switching Characteristics Parameter Test condition Symbol Min Typ. Max Unit Rise time IC = 2.0 mA, VCC = 5.0 V, RL = 100 Ω tr 3.0 µs Fall time IC = 2.0 mA, VCC = 5.0 V, RL = 100 Ω tf 4.0 µs Turn-on time IC = 2.0 mA, VCC = 5.0 V, RL = 100 Ω ton 5.0 µs Turn-off time IC = 2.0 mA, VCC = 5.0 V, RL = 100 Ω toff 3.0 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 80 VCC = 5 V 50 Ω Collector Current, IC (mA) RL = 100 Ω IF 70 60 IF = 30 mA 50 IF = 20 mA 40 IF = 15 mA 30 IF = 10 mA 20 IF = 5 mA 10 0 0 isfh690at_01 Forward Voltage, VF (V) T=–25°C T=0°C 1.1 T=100°C T=75°C T=50°C T=25°C 0.9 0.6 0.01 0.10 1.00 10.00 100.00 Forward Current, IF (mA) isfh690at_02 Figure 3. Diode Forward Voltage vs. Forward Current www.vishay.com 8 10 1000.0 T=–55°C 1.4 6 Figure 4. Collector Current vs. Collector Emitter Voltage Collector-Emitter Dark Current, ICEO (nA) 1.6 4 Collector to Emitter Voltage, VCE (V) isfh690at_03 Figure 2. Switching Operation (without Saturation) 4 2 24 V 40 V 100.0 12 V 10.0 1.0 –60 –40 –20 0 20 40 60 80 100 Ambient Temperature, TA (°C) isfh690at_04 Figure 5. Collector to Emitter Dark Current vs. Ambient Temperature Document Number 83686 Rev. 1.5, 20-Apr-04 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors 300 Collector Current (mA) 10.000 1.000 IF = 25 mA IF = 10 mA 0.100 IF = 5.0 mA IF = 2.0 mA 0.010 IF = 1.0 mA 0.001 0.0 0.2 0.4 0.6 0.8 1.0 Collector-Emitter Saturation Voltage, VCE (sat) (V) isfh690at_05 Current Transfer Ratio, CTR (%) 100.000 VCE=5.0 V 250 200 150 Typical for CTR=150% 100 50 0 0.1 100.0 VCC = 5.0 V IC = 2.0 mA Switching Time (µs) 1.2 0.8 0.6 0.4 0.2 Normalized to 1.0 at TA = 25 °C IF = 1.0 mA, VCE = 5.0 V 0.0 –60 –40 –20 0 20 t on td 60 0 80 100 1000 1500 2000 isfh690at_09 Figure 10. Switching Time vs. Load Resistance 1000 1.0 Switching Time, (µs) Normalized Output Current, CTR 500 Load Resistance, RL (Ω) 1.2 isfh690at_07 ts 1.0 Figure 7. Normalized Output Current vs. Ambient Temperature 0.8 0.6 0.4 IF = 5.0 mA VCC = 5.0 V 100 CTR = 150% 0.2 Normalized to 1.0 at T = 25 °C A IF = 5.0 mA, VCE = 5.0 V 0.0 –60 t off 10.0 0.1 40 Ambient Temperature, TA (°C) isfh690at_06 50 100.0 Figure 9. Current Transfer Ratio vs. Forward Current 1.4 1.0 1.0 10.0 Forward Current, IF (mA) isfh690at_08 Figure 6. Collector Current vs. Collector-Emitter Saturation Voltage Normalized Output Current, CTR Typical for CTR=250% –40 –20 0 20 40 60 Ambient Temperature, TA (°C) Figure 8. Normalized Output Current vs. Ambient Temperature Document Number 83686 Rev. 1.5, 20-Apr-04 10 tr td 1 0 100 80 100 isfh690at_10 tf ts 1000 10000 Load Resistance, RL (Ω) 100000 Figure 11. Switching Time vs. Load Resistance www.vishay.com 5 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Package Dimensions in Inches (mm) 4 3 R .010 (.25) 0.190 (4.83) 0.170 (4.32) .014 (.36) ISO Method A .100 (2.54) .036 (.91) 1 2 .200 (5.08) .290 (7.37) Pin one I.D. (on chamfer side of package) 0.184 (4.67) 0.164 (4.17) 0.024 (0.61) 0.034 (0.86) 0.018 (0.46) 0.013 (0.33) 6° 0.220 (5.59) 0.200 (5.08) 40° 10° 0.008 (0.20) 0.004 (0.10) 0.080 (2.03) 0.075 (1.91) 0.018 (0.46) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) .045 (1.14) LEADS COPLANARITY 0.004 (0.10) Max. 0.025 (0.63) 0.015 (0.38) 0.284 (7.21) 0.264 (6.71) i178037 www.vishay.com 6 Document Number 83686 Rev. 1.5, 20-Apr-04 SFH690ABT/ AT/ BT/ CT Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83686 Rev. 1.5, 20-Apr-04 www.vishay.com 7