VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 VN0610L VN10KLS 60 VN2222L FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays D Inductive Load Drivers Zener Diode Input Protected Low On-Resistance: 3 W Ultralow Threshold: 1.2 V Low Input Capacitance: 38 pF Low Input and Output Leakage Extra ESD Protection Low Offset Voltage Low-Voltage Operation High-Speed, Easily Driven Low Error Voltage Device Marking Front View TO-226AA (TO-92) TO-92S VN0610L “S” VN 0610L xxyy S VN2222L G “S” VN 2222L xxyy D 1 S G 2 D 3 VN10KLS “S” VN 10KLS xxyy 2 “S” = Siliconix Logo xxyy = Date Code 3 “S” = Siliconix Logo xxyy = Date Code Top View Device Marking Front View 1 Top View VN0610L VN2222L VN10KLS ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VN2222L VN0610L VN10KLS Drain-Source Voltage VDS 60 60 Gate-Source Voltage VGS 15/–0.3 15/–0.3 0.27 0.31 0.17 0.20 1 1.0 0.8 0.9 0.32 0.4 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 100_C PD RthJA TJ, Tstg 156 139 –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70213 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-1 VN0610L, VN10KLS, VN2222L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN0610L VN10KLS Symbol Test Conditions Typa V(BR)DSS VGS = 0 V, ID = 100 mA 120 60 VGS(th) VDS = VGS, ID = 1 mA 1.2 0.8 Gate-Body Leakage IGSS VDS = 0 V, VGS = 15 V 1 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Parameter Min VN2222L Max Min 2.5 0.6 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage 100 VDS = 48 V, VGS = 0 V Drain-Source On-Resistanceb rDS(on) TJ = 125_C Common Source Output Conductanceb 2.5 100 10 10 500 500 VDS = 10 V, VGS = 10 V 1 VGS = 5 V, ID = 0.2 A 4 7.5 3 5 7.5 5.6 9 13.5 VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb 60 gfs VDS = 10 V, ID = 0.5 A 300 gos VDS = 7.5 V, ID = 0.05 A 0.2 0.75 0.75 100 V nA m mA A 7.5 W 100 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 38 60 60 16 25 25 2 5 5 7 10 10 9 10 10 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 15 V, RL = 23 W ID ^ 0.6 A, VGEN = 10 V RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDP06 Document Number: 70213 S-04279—Rev. F, 16-Jul-01 VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive 50 1.0 6V VGS = 2.0 V 5V 0.8 VGS = 10 V 1.9 V ID – Drain Current (A) ID – Drain Current (mA) 40 30 1.8 V 20 1.6 V 1.5 V 10 0.6 4V 0.4 3V 0.2 1.4 V 1.2 V 2V 0 0 0 0.4 0.8 1.2 1.6 2.0 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 0.5 7 VDS = 15 V 6 rDS(on) – On-Resistance ( Ω ) 0.4 ID – Drain Current (A) TJ = –55_C 25_C 0.3 125_C 0.2 0.1 5 250 mA 4 3 500 mA ID = 50 mA 2 1 0 0 0 1 2 3 4 0 5 8 12 16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 5 20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 4 VGS – Gate-Source Voltage (V) 4 VGS = 10 V 3 2 1 0 VGS = 10 V 2.00 1.75 ID = 0.5 A 1.50 0.1 A 1.25 1.00 0.75 0.50 0 0.2 0.4 0.6 ID – Drain Current (A) Document Number: 70213 S-04279—Rev. F, 16-Jul-01 0.8 1.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 100 VGS = 0 V f = 1 MHz C – Capacitance (pF) ID – Drain Current (mA) 80 1 TJ = 150_C 0_C 100_C 25_C 0.1 60 Ciss 40 Coss 20 Crss –55_C 0.01 0 0 0.25 0.5 0.75 1.0 1.25 1.5 0 1.75 VGS – Gate-to-Source Voltage (V) 20 30 50 40 VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 100 15.0 ID = 0.5 A VDD = 15 V RL = 25 W VGS = 0 to 10 V 12.5 VDS = 30 V t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 10 10.0 7.5 5.0 48 V 10 td(off) tf td(on) 2.5 tr 1 0 0 100 200 300 400 500 0.1 600 0.5 1.0 ID – Drain Current (A) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70213 S-04279—Rev. F, 16-Jul-01