SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET SUP75N06-07L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Symbol Limit Unit VGS "20 V 75a TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current ID IDM Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH IAR 60 EAR 280 TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range A mJ 250c TC = 25_C (TO-220AB and TO-263) Power Dissipation 55 240 PD 3.7 W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W 0.6 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70776 S-05111—Rev. F, 10-Dec-00 www.vishay.com 2-1 SUP/SUB75N06-07L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) gfs V 3.0 VDS = 60 V, VGS = 0 V, TJ = 125_C 50 VDS = 60 V, VGS = 0 V, TJ = 175_C 250 VDS = 5 V, VGS = 10 V 120 mA m A VGS = 10 V, ID = 30 A 0.0061 0.0075 VGS = 4.5 V, ID = 20A 0.0071 0.0085 VGS = 10 V, ID = 30 A, TJ = 125_C 0.012 VGS = 10 V, ID = 30 A, TJ = 175_C 0.015 VDS = 15 V, ID = 30 A nA 30 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 6300 VGS = 0 V, VDS = 25 V, f = 1 MHz 920 pF 350 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 27 Turn-On Delay Timec td(on) 14 tr 15 40 150 300 50 100 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 75 VDS = 30 V, VGS = 10 V, ID = 75 A VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W tf 120 18 nC 40 ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 75 A , VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms m 1.0 1.3 V 67 120 ns 6 8 A 0.2 0.48 mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70776 S-05111—Rev. F, 10-Dec-00 SUP/SUB75N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 5 V 200 I D – Drain Current (A) I D – Drain Current (A) 150 4V 150 100 3V 50 100 TC = 125_C 50 25_C –55_C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 2 4 5 On-Resistance vs. Drain Current 0.010 –55_C 150 VGS = 4.5 V 0.008 r DS(on) – On-Resistance ( Ω ) 25_C 120 125_C 90 60 30 0 0.006 VGS = 10 V 0.004 0.002 0.000 0 20 40 60 80 100 0 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 100 125 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 10000 8000 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) Transconductance 180 g fs – Transconductance (S) 1 Ciss 6000 4000 2000 Coss Crss 0 VDS = 30 V ID = 75 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70776 S-05111—Rev. F, 10-Dec-00 60 0 25 50 75 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB75N06-07L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.2 100 VGS = 10 V ID = 30 A TJ = 150_C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) 1.9 1.6 1.3 1.0 TJ = 25_C 10 0.7 0.4 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 500 100 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 10 ms Limited by rDS(on) 80 100 ms 1 ms 10 TC = 25_C Single Pulse 20 0 10 ms 100 ms dc 1 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 0.1 1 10 VDS – Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 www.vishay.com 2-4 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 3 Document Number: 70776 S-05111—Rev. F, 10-Dec-00