GF4450 N-Channel Enhancement-Mode MOSFET VDS 60V RDS(ON) 24mΩ ID 7.5A H C N TREENFET G ® t c u rod P New SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 Dimensions in inches and (millimeters) 4 0.019 (0.48) x 45 ° 0.010 (0.25) 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) 0.05 (1.27) 0.04 (1.02) 0.009 (0.23) 0.007 (0.18) 0.035 (0.889) 0.025 (0.635) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.165 (4.19) 0.155 (3.94) 0.245 (6.22) Min. 0 °– 8 ° 0.050 typ. (1.27) Mounting Pad Layout 0.050(1.27) 0.016 (0.41) Mechanical Data Features Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation(1) TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range (1) Junction-to-Ambient Thermal Resistance A = 25°C unless otherwise noted) Limit Unit VDS 60 VGS ± 20 ID 7.5 IDM 50 PD 2.5 1.6 W TJ, Tstg –55 to 150 °C RθJA 50 °C/W V A Note: (1) Surface Mounted on FR4 Board, t ≤ 10s 7/10/01 GF4450 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 – – V IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA IDSS VDS = 60V, VGS = 0V – – 1.0 µA ID(on) VDS ≥ 5V, VGS = 10V 20 – – A VGS = 10V, ID = 7.5A – 12 24 VGS = 6.0V, ID = 6.5A – 14 30 VDS = 15V, ID = 7.5A – 36 – – 65 91 – 12 – – 14 – – 17 30 – 13 20 – 78 117 – 31 40 Static Gate-Body Leakage Zero Gate Voltage Drain Current (2) On-State Drain Current Drain-Source On-State Resistance(2) RDS(on) Forward Transconductance(2) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge VDS = 30V, VGS = 10V Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time ID = 7.5A VDD = 30V, RL = 30Ω tr Turn-Off Delay Time ID ≈ 1A, VGEN = 10V td(off) Fall Time RG = 6Ω tf nC ns Input Capacitance Ciss VGS = 0V – 3147 – Output Capacitance Coss VDS = 30V – 283 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 140 – VSD IS = 2.1A, VGS = 0V – 0.71 1.2 V – – 2.1 A pF Source-Drain Diode Diode Forward Voltage Max. Diode Forward Current IS Notes: (1) Surface Mounted on FR4 Board, t ≤ 10s (2) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 50 50 VDS = 10V 4.5V 40 40 VGS =10V ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 6.0V 5.0V 30 20 4.0V 30 TJ = 125°C 20 25°C 10 10 --55°C 3.5V 0 0 2 4 6 8 10 3 0.035 2.8 ID = 250µA 2.6 2.4 2.2 2 1.8 5 6 0.03 0.025 VGS = 4.5V 0.02 0.015 6V 0.01 10V 0.005 0 1.4 --25 0 25 50 75 100 125 150 Fig. 5 – On-Resistance vs. Junction Temperature 1.8 VGS = 10V ID = 7.5A 1.4 1.2 1 0.8 0.6 0.4 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 30 ID -- Drain Current (A) TJ -- Junction Temperature (°C) --50 4 Fig. 4 – On-Resistance vs. Drain Current 0.04 1.6 3 Fig. 3 – Threshold Voltage vs. Temperature 3.2 --50 2 VGS -- Gate-to-Source Voltage (V) 1.6 RDS(ON) -- On-Resistance (Normalized) 1 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VGS(th) -- Gate-to-Source Threshold Voltage (V) 0 125 150 40 50 GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.04 VDS = 30V ID = 7.5A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 7.5A 0.03 TJ = 125°C 0.02 25°C 0.01 0 6 4 2 0 2 4 6 8 10 0 10 20 30 40 50 60 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 70 100 4000 f = 1MHz VGS = 0V 3500 VGS = 0V Ciss 3000 IS -- Source Current (A) C -- Capacitance (pF) 8 2500 2000 1500 1000 10 TJ = 125°C 1 25°C 0.1 --55°C Coss 500 Crss 0 0 0.01 10 20 30 40 VDS -- Drain-to-Source Voltage (V) 50 60 0 0.2 0.4 0.6 0.8 1.0 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 10 – Breakdown Voltage vs. Junction Temperature 75 ID = 250µA 71 69 67 65 63 61 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 100 70 10 60 1m ID -- Drain Current (A) BVDSS -- Drain-to-Source Breakdown Voltage (V) 73 50 40 30 20 10 RDS(ON) Limit s ms 0m 1s s 1 10s 0.1 10 0 10 10 0µ s DC VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100