BAW75 and BAW76 Small-Signal Diodes DO-204AH (DO-35 Glass) t c u rod P New Features • Silicon Epitaxial Planar Diodes • Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics Parameter (TA = 25°C unless otherwise noted) Symbol Value Unit Reverse Voltage BAW75 BAW76 VR 25 50 V Peak Reverse Voltage BAW75 BAW76 VRM 35 75 V Rectified Current (Average) Half Wave Rectification with Resistive Load at TA = 25°C and f ≥ 50 Hz IO 150(1) mA Surge Forward Current at t < 1µs, Tj = 25°C IFSM 2 A Power Dissipation at TA = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Ptot RΘJA (1) mW (1) °C/W 500 0.35 Tj 200 °C TS –65 to +200 °C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. 5/2/00 BAW75 and BAW76 Small-Signal Diodes Electrical Characteristics Parameter (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit VF at IF = 30mA at IF = 100mA — — — — 1 1 V — — — — — — — — 100 100 100 100 nA µA nA µA Forward Voltage BAW75 BAW76 Leakage Current BAW75 BAW75 BAW76 BAW76 IR VR = 25V VR = 25V, Tj = 150°C VR = 50V VR = 50V, Tj = 150°C Reverse Breakdown Voltage BAW75 BAW76 V(BR)R tested with 5µA pulses 35 75 — — — — V Capacitance BAW75 BAW76 Ctot VF = VR = 0V — — — — 4 2 pF IF = 10mA, IR = 10mA Irr = 1mA — — 4 IF = 10mA, IR = 1mA VR = 6V, RL = 100Ω — Reverse Recovery Time trr ns — 2 BAW75 and BAW76 Small-Signal Diodes Ratings and Characteristics (TA = 25°C unless otherwise noted) BAW75, BAW76 BAW75, BAW76 BAW75, BAW76 BAW75, BAW76 ° BAW75 and BAW76 Small-Signal Diodes Ratings and Characteristics (TA = 25°C unless otherwise noted) BAW75 BAW76 BAW75, BAW76