oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features ■ *R ■ ■ ■ ■ Lead free versions available RoHS compliant (lead free version)* SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes roll away much more difficult. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter CD214- Symbol Unit B120 B130 B130L B140 B150 B160 B170 B180 B190 B1100 Forward Voltage (Max.) (If = 1 A) VF 0.5 0.5 0.41 0.5 0.7 0.7 0.79 0.79 0.79 0.79 V Typical Junction Capacitance* CT 110 110 100 110 110 110 30 30 30 30 pF Reverse Current (Max.) at Rated VR) IR 500 500 1000 500 500 500 500 500 500 500 µA * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Maximum RMS Voltage Avg. Forward Current CD214- Symbol Unit B120 B130 B130L B140 B150 B160 B170 B180 B190 B1100 VRRM 20 30 30 40 50 60 70 80 90 100 V VR VRMS 20 30 30 40 50 60 70 80 90 100 V 14 21 21 28 35 42 49 56 63 70 V IO 1 A Forward Current, Surge Peak (60 Hz, 1 cycle) Isurge 30 30 25 30 30 30 30 30 30 30 A Typical Thermal Resistance** RθJL 20 20 35 20 20 20 25 25 25 25 °C/W Storage Temperature TSTG -55 to +150 °C Junction Temperature TJ -55 to +125 °C ** Thermal resistance junction to lead. How To Order CD 214A - B 1 30 L __ Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Common Code Chip Diode Package • 214A = SMA/DO-214AC Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 30 = 30 V 40 = 40 V 100 = 100 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD214-B130L) Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout A A B C B C G Dimension A (Max.) F H D E Dimension A B C D E F G H SMA (DO-214AC) 4.06 - 4.57 (0.160 - 0.180) 2.29 - 2.92 (0.090 - 0.115) 1.27 - 1.63 (0.050 - 0.064) 0.15 - 0.31 (0.006 - 0.110) 4.83 - 5.59 (0.190 - 0.220) 0.05 - 0.20 (0.002 - 0.008) 2.01 - 2.62 (0.080 - 0.103) 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) B (Min.) C (Min.) SMA (DO-214AC) 2.69 (0.106) 2.10 (0.083) 1.27 (0.050) DIMENSIONS: MM (INCHES) Physical Specifications Case ............................................................................Molded plastic Polarity ....................................................Indicated by cathode band Weight ....................................................0.002 ounces / 0.064 grams Typical Part Marking CD214A-B120 ...................................................................... 120 CD214A-B130 ...................................................................... 130 CD214A-B130L .................................................................... 130L CD214A-B140 ...................................................................... 140 CD214A-B150 ...................................................................... 150 CD214A-B160 ...................................................................... 160 CD214A-B170 ...................................................................... 170 CD214A-B180 ...................................................................... 180 CD214A-B190 ...................................................................... 190 CD214A-B1100 .................................................................... 1100 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B120, CD214A-B130, CD214A-B140, CD214A-B150 & CD214A-B160 Reverse Characteristics Forward Characteristics 10 100 10 B150 to B160 1 Tj=125 °C Reverse Current (mAmps) Forward Current (Amps) B120 to B140 0.1 Tj=100 °C 1 0.1 0.01 Tj=75 °C Tj=25 °C PULSEWIDTH 300µs 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 Forward Voltage (Volts) 40 60 80 120 140 Percent of Rated Peak Reverse Voltage (%) Capacitance Between Terminals Derating Curve 1.25 1000 F = 1 MHz Ta = 25 °C 900 1.00 800 700 Capacitance (pF) Average Forward Current (Amps) 100 0.75 0.50 600 500 400 300 0.25 200 Single Phase Half Wave 60 Hz Resistive or Inductive Load 100 0 0.00 25 50 75 100 125 Lead Temperature (°C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 150 0 20 40 60 Reverse Voltage (Volts) 80 100 CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B130L Reverse Characteristics Forward Characteristics 10 100 Reverse Current (mAmps) Forward Current (Amps) 10 1 0.1 Tj=125 °C Tj=100 °C 1 0.1 0.01 Tj=75 °C Tj=25 °C PULSEWIDTH 300µs 0.001 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 20 40 60 80 120 140 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (Volts) Capacitance Between Terminals Derating Curve 1.25 1000 F = 1 MHz Ta = 25 °C 900 1.00 800 700 0.75 Capacitance (pF) Average Forward Current (Amps) 100 0.50 600 500 400 300 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 200 0.00 100 25 50 75 100 Lead Temperature (°C) 125 150 0 0 20 40 60 80 100 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B170, CD214A-B180, CD214A-B190 & CD214A-B1100 Reverse Characteristics Forward Characteristics 10 100 Reverse Current (mAmps) Forward Current (Amps) 10 1 0.1 Tj=125 °C 1 Tj=100 °C 0.1 0.01 Tj=75 °C Tj=25 °C PULSEWIDTH 300µs 0.001 0.01 0.2 0.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 20 40 60 80 120 140 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (Volts) Capacitance Between Terminals Derating Curve 1.25 1000 F = 1 MHz Ta = 25 °C 900 1.00 800 700 Capacitance (pF) Average Forward Current (Amps) 100 0.75 0.50 600 500 400 300 0.25 200 Single Phase Half Wave 60 Hz Resistive or Inductive Load 100 0.00 25 50 75 100 125 Lead Temperature (°C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 150 0 0 20 40 60 Reverse Voltage (Volts) 80 100 CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P A Trailer End C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Direction of Feed Item MM (INCHES) Symbol Overall Tape Thickness T Tape Width W Reel Width W1 SMA (DO-214AC) 2.90 ± 0.10 (0.114 - 0.004) 5.59 ± 0.10 (0.220 - 0.004) 2.36 ± 0.10 (0.093 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 330 (12.992) 50.0 MIN. (1.969) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004)) 5.50 ± 0.05 (0.217 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.30 ± 0.10 (0.012 - 0.004) 12.00 ± 0.20 (0.472 - 0.008) 18.4 MAX. (0.724) -- 5,000 Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Quantity per Reel REV. 02/05 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.