VISHAY SI7884DP

Si7884DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
rDS(on) (W)
ID (A)
0.007 @ VGS = 10 V
20
0.0095 @ VGS = 4.5 V
17
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
D 100% Rg Tested
APPLICATIONS
D Sychronous Rectifier
PowerPAK SO-8
D
S
6.15 mm
1
2
5.15 mm
S
3
S
4
G
G
D
8
7
D
6
S
D
5
D
N-Channel MOSFET
Bottom View
Ordering Information: Si7884DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
Avalanche Current
L = 0.1 mH
Continuous Source Current (Diode Conduction)a
TA = 70_C
Operating Junction and Storage Temperature Range
12
16
10
50
IAS
30
PD
V
20
IDM
IS
TA = 25_C
Maximum Power Dissipationa
ID
A
4.7
1.7
5.2
1.9
3.3
1.2
TJ, Tstg
Unit
-55 to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Case (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
19
24
52
65
1.2
1.8
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71855
S-32077—Rev. D, 13-Oct-03
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1
Si7884DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 32 V, VGS = 0 V
1
VDS = 32 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
50
VDS w 5 V, VGS = 10 V
rDS(on)
mA
A
VGS = 10 V, ID = 14 A
0.0055
0.007
VGS = 4.5 V, ID = 12 A
0.0075
0.0095
gfs
VDS = 15 V, ID = 14 A
50
VSD
IS = 2.8 A, VGS = 0 V
0.75
1.1
18.5
28
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
nC
6
7.5
0.8
1
td(on)
15
30
tr
10
20
50
100
20
40
30
60
Rise Time
Turn-Off Delay Time
VDS = 20 V, VGS = 5 V, ID = 14 A
0.2
VDD = 20 V, RL = 20 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.8 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
VGS = 10 thru 4 V
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
3V
20
10
30
20
TC = 125_C
10
25_C
-55_C
2V
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
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2
5
6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Document Number: 71855
S-32077—Rev. D, 13-Oct-03
Si7884DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
2500
VGS = 4.5 V
0.008
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
0.010
VGS = 10 V
0.006
0.004
0.002
Ciss
2000
1500
1000
Coss
500
0.000
Crss
0
0
10
20
30
40
50
0
8
ID - Drain Current (A)
Gate Charge
32
40
On-Resistance vs. Junction Temperature
2.0
VDS = 20 V
ID = 14 A
r DS(on) - On-Resistance ( W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
10
8
6
4
2
VGS = 10 V
ID = 14 A
1.6
1.2
0.8
0.4
0
0
7
14
21
28
0.0
-50
35
-25
0
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.020
r DS(on) - On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ - Junction Temperature (_C)
50
I S - Source Current (A)
16
ID = 14 A
0.016
0.012
0.008
0.004
0.000
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Document Number: 71855
S-32077—Rev. D, 13-Oct-03
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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Si7884DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.6
100
0.4
80
ID = 250 mA
Power (W)
V GS(th) Variance (V)
0.2
-0.0
-0.2
60
40
-0.4
-0.6
20
-0.8
-1.0
-50
0
-25
0
25
50
75
100
125
150
0.001
0.1
0.01
10
1
Time (sec)
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55_C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10 - 4
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10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71855
S-32077—Rev. D, 13-Oct-03