TCLT100. Series www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package C E FEATURES 4 3 • SMD low profile 4 lead package • VIORM = 1050 V • CTR flexibility available see order information • Special construction 1 A 17295-5 2 • Extra low coupling capacitance C • DC input with transistor output • Creepage distance > 8 mm • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 The TCLT100. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead SOP4L package. AGENCY APPROVALS APPLICATIONS • UL1577, file no. E76222 • Switchmode power supplies • CSA (cUL) 22.2 bulletin 5A recognized file no. E-76222 • Computer peripheral interface • BSI: BS EN 41003, BS EN 60065 (BS 415), BS EN 60950 (BS 7002), certificate number 7081 and 7402 • Microprocessor system interface • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending), available with option 1 • FIMKO (SETI): EN 60950 Note • See the safety standard approval list “Agency Table” for more detailed information. ORDERING INFORMATION T C L T 1 0 0 SOP-4L # 10.2 mm PART NUMBER AGENCY CERTIFIED/PACKAGE CTR (%) 5 mA UL, cUL, VDE, BSI, FIMKO 50 to 600 SOP-4L 10 mA 5 mA 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 TCLT1000 TCLT1002 TCLT1003 TCLT1004 TCLT1005 TCLT1006 TCLT1007 TCLT1008 TCLT1009 Note • Available only on tape and reel. Rev. 2.4, 29-Apr-11 1 Document Number: 83515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT100. Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA Power dissipation Junction temperature OUTPUT Collector current IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Soldering temperature Tsld 260 °C Collector peak current tp/T = 0.5, tp 10 ms Power dissipation Junction temperature COUPLER Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0 A ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc 110 kHz f = 1 MHz Ck 0.3 pF Junction capacitance V pF OUTPUT Collector emitter cut-off current 10 100 nA 0.3 V COUPLER Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 2.4, 29-Apr-11 2 Document Number: 83515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT100. Series www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. VCE = 5 V, IF = 5 mA TCLT1000 CTR 50 TCLT1002 CTR 63 125 % TCLT1003 CTR 100 200 % VCE = 5 V, IF = 10 mA VCE = 5 V, IF = 1 mA IC/IF VCE = 5 V, IF = 5 mA TYP. MAX. UNIT 600 % TCLT1004 CTR 160 TCLT1002 CTR 22 320 % TCLT1003 CTR TCLT1004 CTR TCLT1005 CTR 50 150 % TCLT1006 CTR 100 300 % TCLT1007 CTR 80 160 % TCLT1008 CTR 130 260 % TCLT1009 CTR 200 400 % 45 % 34 70 % 56 100 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test 100 %, ttest = 1 s Vpd 2 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Vpd 1.68 kV VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 RIO 109 Isi 130 mA Pso 265 mW VIOTM 8 kV Tsi 150 °C 8.0 mm Creepage distance 8.0 mm Insulation distance (internal) 0.40 mm Insulation resistance VIO = 500 V, Tamb = 150 °C (construction test only) Forward current Power dissipation Rated impulse voltage Safety temperature Clearance distance TYP. MAX. UNIT Note • According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor PSO (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode ISI (mA) 50 0 0 0 94 9182-2 25 50 75 100 125 150 13930 TSI - Safety Temperature (°C) tTr = 60 s t2 t stres t Fig. 1 - Derating Diagram Rev. 2.4, 29-Apr-11 t3 ttest t4 t1 Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5 3 Document Number: 83515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT100. Series www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) MIN. TYP. MAX. UNIT td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) tr 3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) tf 4.7 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) ts 0.3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) ton 6 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 , (see figure 3) toff 5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 4) ton 9 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see figure 4) toff 10 μs IF IF 0 +5V IF 0 tp IC I C = 2 mA; adjusted through input amplitude t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 µs 10 % 0 Channel I Channel II 50 Ω Oscilloscope R L = 1 MΩ C L = 20 pF tr td t on 100 Ω tp td tr t on (= td + tr) 95 10804 Fig. 3 - Test Circuit, Non-Saturated Operation IF Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 4 - Test Circuit, Saturated Operation Rev. 2.4, 29-Apr-11 4 Document Number: 83515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TCLT100. Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 0.10 ± 0.10 + 0.10 - 0.05 7.50 ± 0.20 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING TCLT1003 V YWW 68 Rev. 2.4, 29-Apr-11 5 Document Number: 83515 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000