oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4500H3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage ................................................... >245 V rms - For Controlled Environment ............................... 0 °C to 70 °C SMBJ Package (Top View) Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge Device TISP4500H3BJ R 1 VDRM V(BO) V @ 0 °C V @ 70 °C 350 500 2 T MD-SMB-004-a Device Symbol Rated for International Surge Wave Shapes Wave Shape T IPPSM Standard A 2/10 GR-1089-CORE 500 10/250 GR-1089-CORE 230 10/700 ITU-T K.20/21/45 200 10/1000 GR-1089-CORE 100 R SD-TISP4xxx-001-a .............................................. UL Recognized Component Description This device is designed to limit overvoltages on the telephone line to ±500 V over the temperature range. The minimum off-state voltage of ±350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations K.20/21/45 230 V rms power cross test condition (test number 2.3.1). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. How To Order Device TISP4500H3BJ Package SMB (DO-214AA) Carrier For Standard Termination Finish Order As Embossed Tape Reeled TISP4500H3BJR *RoHS Directive 2002/95/EC Jan 27 2003 including Annex APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. For Lead Free Termination Finish Order As Marking Code Std. Qty. TISP4500H3BJR-S 4500H3 3000 TISP4500H3BJ Overvoltage Protector Absolute Maximum Ratings, 0 °C ≤ T A ≤ 70 °C (Unless Otherwise Noted) Rating Repetitive peak off-state voltage Symbol Value Unit VDRM ±350 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) TA = 25 °C TA = 25 °C 2/10 (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape) 10/250 (Telcordia GR-1089-CORE, 10/250 µs voltage wave shape) 10/700 (ITU-T K.20/21/45, 5/310 µs current wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape) 500 230 200 100 IPPSM TA = 25 °C A Non-repetitive peak on-state current (see Notes 1, 2 and 3) 50 Hz, 20 ms (1 cycle) 50 Hz, 1000 s Junction temperature Storage temperature range ITSM ±55 ±2.0 A TJ -40 to +150 °C Tstg -65 to +150 °C NOTES: 1. Initially the device must be in thermal equilibrium. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, 0 °C ≤ TA ≤ 70 °C (Unless Otherwise Noted) Parameter IDRM V(BO) V(BO) Test Conditions Repetitive peak offstate current Breakover voltage Impulse breakover voltage VD = VDRM dv/dt = ±250 V/ms, Max ±5 TA = 70 °C ±10 RSOURCE = 300 Ω Figure A.3-1/K.44 10/700 impulse generator Unit µA ±500 V ±500 V ±0.6 A ±10 µA Charge Voltage = ±4 kV Breakover current IH Holding current IT = ±5 A, di/dt = -/+30 mA/ms ID Off-state current VD = ±50 V Off-state capacitance Typ ITU-T recommendation K.44 (02/2000) I(BO) Coff Min TA = 25 °C dv/dt = ±250 V/ms, RSOURCE = 300 Ω A ±0.15 TA = 70 °C f = 1 MHz, Vd = 1 V rms, VD = 0 84 f = 1 MHz, Vd = 1 V rms, VD = -1 V 67 f = 1 MHz, Vd = 1 V rms, VD = -2 V 62 f = 1 MHz, Vd = 1 V rms, VD = -50 V 31 pF Thermal Characteristics Parameter Test Conditions Min Typ EIA/JESD51-3 PCB, IT = ITSM(1000), RθJA Junction to free air thermal resistance 4-layer PCB, IT = ITSM(1000), TA = 25 °C Unit 113 TA = 25 °C, (see Note 5) 265 mm x 210 mm populated line card, Max °C/W 50 NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4500H3BJ Overvoltage Protector Parameter Measurement Information +i Quadrant I IPPSM Switching Characteristic ITSM V(BO) I(BO) IH VD -v V(BR) I(BR) ID ID I(BR) V(BR) VD +v IH I(BO) V(BO) ITSM Quadrant III IPPSM Switching Characteristic -i Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. PM4XAD TISP4500H3BJ Overvoltage Protector MECHANICAL DATA Recommended Printed Wiring Land Pattern Dimensions SMB Land Pattern 2.54 (.100) 2.40 (.094) 2.16 (.085) DIMENSIONS ARE: MM (INCHES) MDXXBIB Device Symbolization Code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. Device Symbolization Code TISP4500H3BJ 4500H3 APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4500H3BJ Overvoltage Protector MECHANICAL DATA SMBJ (DO-214AA) Plastic Surface Mount Diode Package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB 4.06 - 4.57 (.160 - .180) 3.30 - 3.94 (.130 - .155) 2 Index Mark (if needed) DIMENSIONS ARE: MM (INCHES) 2.00 - 2.40 (.079 - .094) 0.76 - 1.52 (.030 - .060) 1.90 - 2.10 (.075 - .083) 0.10 - 0.20 (.004 - .008) 1.96 - 2.32 (.077 - .091) 5.21 - 5.59 (.205 - .220) MDXXBHAB APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4500H3BJ Overvoltage Protector MECHANICAL DATA Tape DImensions SMB Package Single-Sprocket Tape 1.55 - 1.65 (.061 - .065) 3.90 - 4.10 (.154 - .161) 1.95 - 2.05 (.077 - .081) 0.40 MAX. (.016) 1.65 - 1.85 (.065 - .073) 5.54 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 7.90 - 8.10 (.311 - .319) Ø 1.50 MIN. (.059) 0 MIN. Carrier Tape Direction of Feed Cover Tape 4.50 MAX. (.177) Embossment 20 ° Index Mark DIMENSIONS ARE: 8.20 MAX. (.323) Maximium component rotation Typical component cavity center line Typical component center line MM (INCHES) NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in.) MIN. to 0.65 mm (.026 in.) MAX. so that the component cannot rotate more than 20° within the determined cavity. MDXXBJA B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 ± 3.0 mm (12.99 ± .118 in.) Reel hub diameter: 75 mm (2.95 in.) MIN. Reel axial hole: 13.0 ± 0.5 mm (.512 ± .020 in.) C. 3000 devices are on a reel. “TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries. APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.