VISHAY SI7456DP-T1-E3

Si7456DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)
ID (A)
0.025 at VGS = 10 V
9.3
0.028 at VGS = 6.0 V
8.8
PowerPAK SO-8
APPLICATIONS
S
6.15 mm
• Primary Side Switch for High Density DC/DC
• Telecom/Server 48 V, Full-/Half-Bridge DC/DC
• Industrial and 42 V Automotive
5.15 mm
1
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• PWM Optimized for Fast Switching
• 100 % Rg Tested
S
2
S
3
D
G
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7456DP-T1-E3 (Lead (Pb)-free)
Si7456DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150°C)a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
TA = 25 °C
TA = 85 °C
ID
L = 0.1 mH
IDM
IAS
EAS
IS
a
Continuous Source Current (Diode Conduction)
TA = 25 °C
TA = 85 °C
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
10 s
9.3
6.7
4.3
5.2
2.7
Steady State
100
± 20
5.7
4.1
40
30
45
1.6
1.9
1.0
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
a
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
www.vishay.com
1
Si7456DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
2
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 85 °C
20
VDS ≥ 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
4
± 100
µA
40
A
VGS = 10 V, ID = 9.3 A
0.021
0.025
VGS = 6.0 V, ID = 8.8 A
0.023
0.028
gfs
VDS = 15 V, ID = 9.3 A
35
VSD
IS = 4.3 A, VGS = 0 V
0.8
1.2
36
44
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = 50 V, VGS = 10 V, ID = 9.3 A
0.5
td(on)
Turn-On Delay Time
VDD = 50 V, RL = 50 Ω
ID ≅ 1.0 A, VGEN = 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
10
8.6
IF = 4.3 A, dI/dt = 100 A/µs
1.27
2.1
20
40
10
20
46
90
26
50
50
80
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 V thru 6 V
5V
32
ID - Drain Current (A)
ID - Drain Current (A)
32
24
16
24
16
TC = 125 °C
8
8
25 °C
- 55 °C
4V
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.04
3500
Ciss
0.03
VGS = 6.0
0.02
2500
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3000
VGS = 10 V
2000
1500
1000
0.01
Crss
500
0.00
0
0
8
16
24
32
40
0
20
30
40
50
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
60
2.6
VDS = 50 V
ID = 9.3 A
VGS = 10 V
ID = 9.3 A
2.3
8
6
4
2.0
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
ID - Drain Current (A)
10
1.7
1.4
1.1
2
0.8
0.5
- 50
0
0
6
12
18
24
30
36
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.08
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
TJ = 25 °C
1
0.0
- 25
Qg - Total Gate Charge (nC)
40
IS - Source Current (A)
Coss
0.06
ID = 9.3 A
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
10
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3
Si7456DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
50
40
ID = 250 μA
Power (W)
VGS(th) Variance (V)
0.0
- 0.5
30
20
- 1.0
10
- 1.5
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 52 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71603.
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Document Number: 71603
S09-0271-Rev. F, 16-Feb-09
Package Information
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Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
E3
Backside View of Dual Pad
MILLIMETERS
DIM.
MIN.
A
0.97
A1
b
0.33
c
0.23
D
5.05
D1
4.80
D2
3.56
D3
1.32
D4
D5
E
6.05
E1
5.79
E2 (for AL product)
3.30
E2 (for other product)
3.48
E3
3.68
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
0.56
H
0.51
L
0.51
L1
0.06

0°
W
0.15
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
b
D2
INCHES
NOM.
MAX.
MIN.
NOM.
MAX.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
1
0.246
0.236
0.144
0.151
0.154
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
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15
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Revision: 02-Oct-12
1
Document Number: 91000