FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current TSTG Storage Temperature Range PC Collector Power Dissipation 500 mA -55~150 °C 350 mW Value Units 357 °C/W * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol RTH(j-a) Parameter Thermal Resistance, Junction to Ambiet Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0 350 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 uA, IC = 0 6 ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 hFE DC Current Gain* IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V VCE(sat) Collector-Emitter Saturation Voltage * VBE(sat) Base-Emitter Breakdown Voltage * fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20V, f =100 MHz Ccb Output Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz V 0.1 uA 0.1 uA IC = 20 mA, IB = 2.0 mA 0.5 V IC = 20 mA, IB = 2.0 mA 0.9 V 25 40 40 50 MHz 3 pF * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2007 Fairchild Semiconductor Corporation FJV42 Rev. A 1 www.fairchildsemi.com FJV42 NPN High Voltage Transistor March 2007 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 1000 VCE = 10V 100 10 1 10 10 IC = 10 IB VBE(sat) 1 VCE(sat) 0.1 0.01 1 100 10 IC[mA], COLLECTOR CURRENT 100 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 Ccb [pF], CAPACITANCE IE = 0 f = 1MHz 10 1 0.1 1 10 100 100 VCE = 20V 80 60 40 20 0 1 10 100 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product 2 FJV42 Rev. A 120 www.fairchildsemi.com FJV42 NPN High Voltage Transistor Typical Characteristics FJV42 NPN High Voltage Transistor Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters 3 FJV42 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only. Rev. I23 4 FJV42 Rev. A www.fairchildsemi.com FJV42 NPN High Voltage Transistor TRADEMARKS