NP-SAMC Series Product Preview 50A, Ultra Low Capacitance TSPD The NP−SAMC series of Low Capacitance Thyristor Surge Protection Devices (TSPD) protect sensitive electronic equipment from transient overvoltage conditions. Due to their ultra low off−state capacitance (Co), they offer minimal signal distortion for high speed equipment such as DSL and T1/E1 circuits. The low nominal offstate capacitance translates into the extremely low differential capacitance offering superb linearity with applied voltage or frequency. The NP−SAMC Series helps designers to comply with the various regulatory standards and recommendations including: GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950, UL 1950. http://onsemi.com ULTRA LOW CAPACITANCE BIDIRECTIONAL SURFACE MOUNT THYRISTOR 50A, 10x1000ms SURGE Features • • • • • • Ultra Low − Micro Capacitance Low Leakage (Transparent) High Surge Current Capabilities Precise Turn on Voltages Low Voltage Overshoot These are Pb−Free Devices T R Typical Applications SMB JEDEC DO−214AA CASE 403C • xDSL Central Office and Customer Premise • T1/E1 • Other Broadband High Speed Data Transmission Equipment MARKING DIAGRAM ELECTRICAL CHARACTERISTICS VDRM V(BO) CO, 2 V, 1 MHz CO, 50 V, 1 MHz AYWW xxxAMG G V V pF (Max) pF (Max) NP0640SAMCT3G "58 "77 18 8 NP0720SAMCT3G "65 "88 18 8 NP0900SAMCT3G "75 "98 18 8 NP1100SAMCT3G "90 "130 18 8 NP1300SAMCT3G "120 "160 18 8 NP1500SAMCT3G "140 "180 18 8 NP1800SAMCT3G "170 "220 18 8 NP2100SAMCT3G "180 "240 18 8 NP2300SAMCT3G "190 "260 18 8 Device Package Shipping† NP2600SAMCT3G "220 "300 18 8 NPxxx0SAMCT3G NP3100SAMCT3G "275 "350 18 8 SMB (Pb−Free) 2500 Tape & Reel NP3500SAMCT3G "320 "400 18 8 Device G in part number indicates RoHS compliance Other protection voltages are available upon request Symmetrical Protection − Values the same in both negative and positive excursions (See V−I Curve on page 3) A Y WW xxx = Assembly Location = Year = Work Week = Specific Device Code (NPxxx0SAMC) G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. P2 1 Publication Order Number: NP0640SA/D NP−SAMC Series SURGE RATINGS IPPS A ITSM A di/dt Waveform (ms) 2x10 8x20 10x160 10x560 10x360 10x1000 5x310 0.1 s 60 Hz A/ms Value 150 150 90 50 75 50 75 20 500 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol VDRM IPPS ITSM Rating Value Unit Repetitive peak off−state voltage: Rated maximum NP0640SAMCT3G (peak) continuous voltage that may be applied in the NP0720SAMCT3G off−state conditions including all dc and repetitive alternating voltage components. NP0900SAMCT3G $58 V NP1100SAMCT3G $90 NP1300SAMCT3G $120 NP1500SAMCT3G $140 NP1800SAMCT3G $170 NP2100SAMCT3G $180 NP2300SAMCT3G $190 NP2600SAMCT3G $220 NP3100SAMCT3G $275 NP3500SAMCT3G $320 Nonrepetitive peak pulse current: Rated maximum value of peak impulse pulse current that may be applied. Nonrepetitive peak on−state current: Rated maximum (peak) value of ac power frequency on−state surge current which may be applied for a specified time or number of ac cycles. $65 $75 2x10 ms, GR−1089−CORE 150 8x20 ms, IEC−61000−4−5 150 10x160 ms, TIA−968−A 90 10x560 ms, TIA−968−A 50 10x360 ms, GR−1089−CORE 75 10x1000 ms, GR−1089−CORE 50 5x310 ms, ITU−K.20/K.21/K.45 75 0.1s, 50/60 Hz, full sine wave 20 A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 NP−SAMC Series ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted) Max Unit Breakover voltage: The maximum voltage across the device in or at the NP0640SAMCT3G breakdown region. NP0720SAMCT3G VDC = 1000 V, dv/dt = 100 V/ms Rating $77 V NP0900SAMCT3G $98 NP1100SAMCT3G $130 NP1300SAMCT3G $160 NP1500SAMCT3G $180 NP1800SAMCT3G $220 NP2100SAMCT3G $240 NP2300SAMCT3G $260 NP2600SAMCT3G $300 NP3100SAMCT3G $350 NP3500SAMCT3G $400 Symbol V(BO) I(BO) IH IDRM VT Min Typ $88 Breakover Current: The instantaneous current flowing at the breakover voltage. Holding Current: The minimum current required to maintain the device in the on−state. Off−state Current: The dc value of current that results from the application of the off−state voltage 800 150 mA VD = 50 V 2 VD = VDRM 5 On−state Voltage: The voltage across the device in the on−state condition. IT = 2.2 A (pk), PW = 300 ms, DC = 2% dv/dt Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off−state to the on−state. Linear Ramp between 0.1 VDRM and 0.9 VDRM di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device can withstand without damage. CO Off−state Capacitance f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc mA 4 ±5 mA V kV/ms ±500 A/ms NP0640SAMCT3G 18 pF NP0720SAMCT3G 18 NP0900SAMCT3G 18 NP1100SAMCT3G 18 NP1300SAMCT3G 18 NP1500SAMCT3G 18 NP1800SAMCT3G 18 NP2100SAMCT3G 18 NP2300SAMCT3G 18 NP2600SAMCT3G 18 NP3100SAMCT3G 18 NP3500SAMCT3G 18 THERMAL CHARACTERISTICS Symbol TSTG TJ R0JA Value Unit Storage Temperature Range Rating −65 to +150 °C Junction Temperature −40 to +150 °C 90 °C/W Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06” Fan out in a 3x3 inch pattern, 2 oz copper track. http://onsemi.com 3 ELECTRICAL PARAMETER/RATINGS DEFINITIONS +I Symbol Parameter IPPS VDRM Repetitive Peak Off−state Voltage ITSM V(BO) Breakover Voltage IT IDRM Off−state Current IH I(BO) Breakover Current IH Holding Current VT On−state Voltage IT On−state Current ITSM Nonrepetitive Peak On−state Current IPPS Nonrepetitive Peak Impulse Current VD Off−state Voltage ID Off−state Current VT Off−State Region I(BO) −Voltage On−State Region NP−SAMC Series ID IDRM +Voltage VD V(BO) VDRM −I Figure 1. Voltage Current Characteristics of TSPD Ipp − PEAK PULSE CURRENT − %Ipp PEAK ON−STATE CURRENT 100 10 1 0.1 1 10 100 CURRENT DURATION (s) 1000 tr = rise time to peak value tf = decay time to half value Peak Value 100 Half Value 50 0 0 tr tf TIME (ms) Figure 2. Nonrepetitive On−State Current vs. Time (ITSM) Figure 3. Nonrepetitive On−State Impulse vs. Waveform (IPPS) Detailed Operating Description The TSPD or Thyristor Surge Protection Device are specialized silicon based overvoltage protectors, used to protect sensitive electronic circuits from damaging overvoltage transient surges caused by induced lightning and powercross conditions. The TSPD protects by switching to a low on state voltage when the specified protection voltage is exceeded. This is known as a “crowbar” effect. When an overvoltage occurs, the crowbar device changes from a high−impedance to a low−impedance state. This low−impedance state then offers a path to ground, shunting unwanted surges away from the sensitive circuits. This crowbar action defines the TSPD’s two states of functionality: Open Circuit and Short Circuit. Open Circuit – The TSPD must remain transparent during normal circuit operation. The device looks like an open across the two wire line. Short Circuit – When a transient surge fault exceeds the TSPD protection voltage threshold, the devices switches on, http://onsemi.com 4 NP−SAMC Series and shorts the transient to ground, safely protecting the circuit. + I(OP) + Protected Equipment − V(OP) TSPD − TSPD’s are useful in helping designers meet safety and regulatory standards in Telecom equipment including GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC Part 68, UL1950, and EN 60950. ON Semiconductor offers a full range of these products in the NP series product line. •TSPD looks like an open •Circuit operates normally DEVICE SELECTION Normal Circuit Operation I + (Fault) V(Fault) TSPD − + I(Fault) Protected Equipment − Operation during a Fault When selecting a TSPD use the following key selection parameters. •Fault voltage greater than Vbo occurs •TSPD shorts fault to ground •After short duration events the O/V switches back to an open condition •Worst case (Fail/Safe) •O/V permanent short •Equipment protected Off−State Voltage VDRM Choose a TSPD that has an Off−State Voltage greater than the normal system operating voltage. The protector should not operate under these conditions: Example: Figure 4. Normal and Fault Conditions Vbat = 48 Vmax Vring = 150 Vrms = 150*1.414 = 212 V peak The electrical characteristics of the TSPD help the user to define the protection threshold for the circuit. During the open circuit condition the device must remain transparent; this is defined by the IDRM. The IDRM should be as low as possible. The typical value is less than 5 mA. The circuit operating voltage and protection voltage must be understood and considered during circuit design. The V(BO) is the guaranteed maximum voltage that the protected circuit will see, this is also known as the protection voltage. The VDRM is the guaranteed maximum voltage that will keep the TSPD in its normal open circuit state. The TSPD V(BO) is typically a 20−30% higher than the VDRM. Based on these characteristics it is critical to choose devices which have a VDRM higher than the normal circuit operating voltage, and a V(BO) which is less than the failure threshold of the protected equipment circuit. A low on−state voltage Vt allows the TSPD to conduct large amounts of surge current (500 A) in a small package size. Once a transient surge has passed and the operating voltage and currents have dropped to their normal level the TSPD changes back to its open circuit state. VDRM should be greater than the peak value of these two components: VDRM > 212 + 48 = 260 VDRM Breakover Voltage V(BO) Verify that the TSPD Breakover Voltage is a value less than the peak voltage rating of the circuit it is protecting. Example: Relay breakdown voltage, SLIC maximum voltage, or coupling capacitor maximum rated voltage. Peak Pulse Current Ipps Choose a Peak Pulse current value which will exceed the anticipated surge currents in testing. In some cases the 100 A “C” series device may be needed when little or no series resistance is used. When a series current limiter is used in the circuit a lower current level of “A” or “B” may be used. To determine the peak current divide the maximum surge current by the series resistance. Hold Current (IH) The Hold Current must be greater than the maximum system generated current. If it is not then the TSPD will remain in a shorted condition, even after a transient event has passed. Transient Surge Equipment Failure Threshold Volts TSPD Protection Voltage Upper Limit Normal System Operating Voltage TSPD Transparent TSPD Protection TSPD Transparent (open) (short) (open) Time Figure 5. Protection During a Transient Surge http://onsemi.com 5 NP−SAMC Series TYPICAL APPLICATIONS Tip NP3100SAMC Voice NP3100SAMC Ring DSL Figure 6. ADSL NP1800SAMC NP0640SAMC NP0640SAMC NP1800SAMC TX POWER RX NP1800SAMC NP0640SAMC NP0640SAMC NP1800SAMC Figure 7. T1/E1 http://onsemi.com 6 NP−SAMC Series PACKAGE DIMENSIONS SMB CASE 403C−01 ISSUE A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B C K J P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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