FAIRCHILD SGL60N90DG3

SGL60N90DG3
General Description
Features
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 2.0 V @ IC = 60A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
C
G
TO-264
G
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
E
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
SGL60N90DG3
900
± 25
60
42
120
15
180
72
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
----
Max.
0.69
2.08
25
Units
°C/W
°C/W
°C/W
SGL60N90DG3 Rev. A1
SGL60N90DG3
IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
900
---
----
-1.0
± 500
V
mA
nA
IC = 60mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 60A, VGE = 15V
4.0
---
5.0
1.4
2.0
7.0
1.8
2.7
V
V
V
----
6500
250
220
----
pF
pF
pF
--------
250
450
450
250
260
70
60
400
700
700
400
300
---
ns
ns
ns
ns
nC
nC
nC
Typ.
1.2
1.75
1.2
0.05
Max.
1.7
2.0
1.5
2
Units
V
V
us
uA
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE=10V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600 V, IC = 60A,
RG = 51Ω, VGE=15V,
Resistive Load, TC = 25°C
VCE = 600 V, IC = 60A,
VGE = 15V
Electrical Characteristics of DIODE T
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
IR
Diode Reverse Recovery Time
Instantaneous Reverse Current
©2002 Fairchild Semiconductor Corporation
= 25°C unless otherwise noted
Test Conditions
IF = 15A
IF = 60A
IF = 60A di/dt = 20 A/us
VRRM = 900V
Min.
----
SGL60N90DG3 Rev. A1
SGL60N90DG3
Electrical Characteristics of the IGBT
Common Emitter
T C = 25℃
100
20V
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
8V
9V
80
10V
15V
Collector Current, I C [A]
Collector Current, I C [A]
80
60
7V
40
20
SGL60N90DG3
100
60
40
20
VGE = 6V
0
0
0
1
2
3
4
5
0
Fig 1. Typical Output Characteristics
10
Common Emitter
VGE = 15V
80A
60A
3
2
30A
IC = 10A
1
Common Emitter
TC = -40℃
8
6
30A
4
60A
80A
2
IC = 10A
0
0
-50
0
50
100
150
4
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
10
Common Emitter
TC = 25℃
12
16
20
Fig 4. Saturation Voltage vs. VGE
10
Collector-Emitter Voltage, V CE [V]
8
6
30A
4
8
Gate-Emitter Voltage, VGE [V]
Case Temperature, TC [℃]
Collector-Emitter Voltage, VCE [V]
2
Fig 2. Typical Saturation Voltage Characteristics
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
3
1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
60A
80A
2
IC = 10A
Common Emitter
TC = 125℃
8
6
30A
4
60A
80A
2
IC = 10A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
SGL60N90DG3 Rev. A1
SGL60N90DG3
10000
VCC = 600V
IC = 60A
VGE = ± 15V
TC = 25 ℃
Cies
1000
Coes
100
1000
Switching Time [ns]
Capacitance [pF]
10000
Cres
Tr
Tf
100
Tdon
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
0.1
Tdoff
10
1
0
10
50
Fig 7. Capacitance Characteristics
150
200
Fig 8. Switching Characteristics vs.
Gate Resistance
1000
15
Gate-Emitter Voltage, VGE [V]
VCC = 600V
RG = 51Ω
VGE = ± 15V
T C = 25 ℃
Tdoff
Swing Time [ns]
100
Gate Resistance, RG [Ω ]
Collector-Emitter Voltage, VCE [V]
Tr
Tdon
Tf
Common Emitter
VCC = 600V, RL = 10Ω
TC = 25℃
12
9
6
3
0
100
10
20
30
40
50
60
0
100
Collector Current, I C [A]
200
300
Gate Charge, Qg [nC]
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
10
IC MAX. (Continuous)
10us
o
Collector Current , I C [A]
100
Thermal Response, Zthjc [ C/W]
IC MAX. (Pulsed)
100us
1ms
10
10ms
DC Operation
Single Nonrepetitive Pulse
T C = 25℃
Curve must be darated
linearly with increase
in temperature
1
1
0.5
0.2
0.1
0.1
0.05
0.02
Pdm
0.01
t1
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
single pulse
1E-3
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 11. SOA Characteristics
©2002 Fairchild Semiconductor Corporation
1000
-4
10
-3
10
-2
10
-1
10
0
10
1
10
Rectangular Pulse Duration [sec]
Fig 12. Transient Thermal Impedance of IGBT
SGL60N90DG3 Rev. A1
Reverse Recovery Time, t rr [us]
10
1
120
IF = 60A
T C = 25℃
1.0
100
0.8
80
trr
0.6
60
0.4
40
0.2
20
Irr
0.0
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0
0
3.0
40
80
Forward Voltage, VFM [V]
16
1.2
12
1.0
10
trr
8
6
Irr
0.4
4
0.2
2
0
0.0
10
20
30
40
50
60
Forward Current, I F [A]
200
240
TC = 25℃ ━━
TC = 150℃ ------
100
10
1
0.1
0.01
1E-3
0
300
600
900
Reverse Voltage, VR [V]
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
250
1000
Reverse Curent, I R [uA]
Reverse Recovery Time, trr [us]
14
Reverse Recovery Current, Irr [A]
di/dt = -20A/㎲
T C = 25℃
0.6
160
Fig 14. Reverse Recovery Characteristics
vs. di/dt
1.6
0.8
120
di/dt [A/㎲ ]
Fig 13. Forward Characteristics
1.4
Reverse Recovery Current, I rr [A]
Forward Current, IF [A]
1.2
TC = 25℃ ━━
TC = 100℃ ------
Fig 16. Reverse Current vs. Reverse Voltage
TC = 25 ℃
Capacitance, Cj [pF]
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
100
SGL60N90DG3
Package Dimension
(8.30)
(1.00)
(2.00)
(7.00)
20.00 ±0.20
2.50 ±0.10
4.90 ±0.20
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
(1.50)
20.00 ±0.50
(7.00)
(2.00)
(11.00)
1.50 ±0.20
)
.20
.00
0 ±0
0)
2.0
(R
(R1
(0.50)
ø3.3
(9.00)
(9.00)
(8.30)
(4.00)
20.00 ±0.20
6.00 ±0.20
TO-264
+0.25
1.00 –0.10
+0.25
0.60 –0.10
2.80 ±0.30
(2.80)
5.45TYP
[5.45 ±0.30]
(0.15)
(1.50)
3.50 ±0.20
5.00 ±0.20
5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5