www.fairchildsemi.com KA1L0380B/KA1L0380RB/KA1M0380RB/ KA1H0380RB Fairchild Power Switch(SPS) Features Description • • • • • • • • • • • The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. Compared to discrete MOSFET and controller or RCC switching converter solution, a SPS can reduce total component count, design size, weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. Precision fixed operating frequency KA1L0380B/KA1L0380RB (50KHz) KA1M0380RB (67KHz) KA1H0380RB (100KHz) Pulse by pulse over current limiting Over load protection Over voltage protection (Min. 23V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Auto restart (KA1L0380RB/KA1M0380RB/KA1H0380RB) TO-220F-4L 1 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Vref Internal bias #2 DRAIN SFET Good logic OSC 9V 5µA S 1mA R − #4 FB 2.5R 1R 0.1V − + 25V L.E.B + + 7.5V − Q S Thermal S/D R #1 GND Q Power on reset OVER VOLTAGE S/D Rev. .5.0 ©2000 Fairchild Semiconductor International KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Absolute Maximum Ratings Parameter Drain-source (GND) voltage (1) Drain-Gate voltage (RGS=1MΩ) Gate-source (GND) voltage Drain current pulsed (2) Single pulsed avalanche energy Avalanche (3) current(4) Symbol Value Unit VDSS 800 V VDGR 800 V VGS ±30 V IDM 12 ADC EAS 95 mJ IAS 6 A Continuous drain current (TC=25°C) ID 3.0 ADC Continuous drain current (TC=100°C) ID 2.1 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V PD 35 W Derating 0.28 W/°C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C Total power dissipation Notes: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, VDD=50V, RG=25Ω, starting Tj=25°C 4. L=13µH, starting Tj=25°C 2 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Drain-source breakdown voltage Symbol Condition Min. Typ. Max. Unit BVDSS VGS=0V, ID=50µA 800 - - V VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Zero gate voltage drain current IDSS RDS(ON) VGS=10V, ID=1.5A - 4.0 5.0 Ω Forward transconductance (Note) gfs VDS=15V, ID=1.5A 1.5 2.5 - S Input capacitance Ciss - 779 - - 75.6 - - 24.9 - Static drain-source on resistance (Note) Output capacitance Coss Reverse transfer capacitance Crss Turn on delay time td(on) Rise time Turn off delay time tr td(off) Fall time tf Total gate charge (gate-source+gate-drain) Qg Gate-source charge Qgs Gate-drain (Miller) charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=3.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=3.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) - 40 - - 95 - - 150 - - 60 - - - 34 - 7.2 - - 12.1 - pF nS nC Note: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 1S = --R 3 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Electrical Characteristics (CONTROL part) (Ta=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit 4.80 5.00 5.20 V - 0.3 0.6 mV/°C KA1L0380B 45 50 55 KA1L0380RB 45 50 55 KA1M0380RB 61 67 73 KA1H0380RB 90 100 110 - ±5 ±10 KA1L0380B 74 77 80 REFERENCE SECTION Output voltage (1) Temperature Stability Vref (1)(2) Vref/∆T Ta=25°C −25°C≤Ta≤+85°C OSCILLATOR SECTION Initial accuracy FOSC Frequency change with temperature (2) ∆F/∆T −25°C≤Ta≤+85°C kHz % PWM SECTION Maximum duty cycle Dmax KA1L0380RB 74 77 80 KA1M0380RB 74 77 80 KA1H0380RB 64 67 70 Ta=25°C, 0V≤Vfb≤3V 0.7 0.9 1.1 mA Ta=25°C, 5V≤Vfb≤VSD 4.0 5.0 6.0 µA Max. inductor current 1.89 2.15 2.41 A % FEEDBACK SECTION Feedback source current IFB Shutdown delay current Idelay OVER CURRENT PROTECTION SECTION Over current protection IL(max) UVLO SECTION Start threshold voltage Vth(H) - 14 15 16 V Minimum operating voltage Vth(L) After turn on 9 10 11 V TOTAL STANDBY CURRENT SECTION Start current Operating supply current (control part only) VCC zener voltage IST VCC=14V 0.1 0.3 0.45 mA IOPR Ta=25°C 6 12 18 mA ICC=20mA 30 32.5 35 V VZ SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection voltage (1) VSD - 6.9 7.5 8.1 V TSD - 140 160 - °C VOVP - 23 25 28 V Notes: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process 4 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Typical Performance Characteristics (These characteristic graphs are normalized at Ta=25°C) Fig.2 Feedback Source Current Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 Temperature [°C] Figure 1. Operating Frequency Fig.3 Operating Current 1.2 1.15 1.1 1.05 IIop OPR 1 0.95 0.9 0.85 0.8 -25 100 125 150 Fig.4 Max Inductor Current 1.1 1.05 IL(MAX) Ipeak 1 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 3. Operating Current Figure 4. Max. Inductor Current Fig.5 Start up Current Fig.6 Start Threshold Voltage 1.15 1.1 1.3 1.05 1.1 IIstart ST V th(H) 1 Vstart 0.9 0.95 0.7 0.5 -25 75 Figure 2. Feedback Source Current Temperature [°C] 1.5 50 Temperature [°C] 0.9 0 25 50 75 100 125 150 Temperature [°C] Figure 5. Start up Current 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 6. Start Threshold Voltage 5 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.7 Stop Threshold Voltage 1.15 Fig.8 Maximum Duty Cycle 1.15 1.1 1.1 1.05 1.05 Vth(L) 1 Vstop Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 0.85 -25 0 Temperature [°C] Figure 7. Stop Threshold Voltage 50 75 100 125 150 Figure 8. Maximum Duty Cycle Fig.10 Shutdown Feedback Voltage Fig.9 Vcc Zener Voltage 1.15 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 Temperature [°C] 50 75 100 125 150 Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 25 Temperature [°C] Figure 9. VCC Zener Voltage Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 Temperature [°C] Figure 11. Shutdown Delay Current 6 25 Temperature [°C] 0.85 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 12. Over Voltage Protection KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Typical Performance Characteristics (Continued) (These characteristic grahps are normalized at Ta=25°C) Fig.14 Drain Source Turn-on Resistance 2.5 2 1.5 Rdson 1 0.5 0 -25 0 25 50 75 100 125 150 Temperature [°C] Figure 13. Drain Source Turn-on Resistance 7 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Package Dimensions TO-220F-4L 8 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Package Dimensions (Continued) TO-220F-4L (Forming) 9 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB Ordering Information Product Number KA1L0380B-TU KA1L0380B-YDTU KA1L0380RB-TU KA1L0380RB-YDTU KA1M0380RB-TU KA1M0380RB-YDTU KA1H0380RB-TU KA1H0380RB-YDTU TU : Non Forming Type YDTU : Forming Type 10 Package TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) TO-220F-4L TO-220F-4L(Forming) Rating Fosc 800V, 3A 50kHz 800V, 3A 50kHz 800V, 3A 67kHz 800V, 3A 100kHz KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB 11 KA1L0380B/KA1L0380RB/KA1M0380RB/KA1H0380RB DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 9/7/00 0.0m 001 Stock#DSxxxxxxxx 2000 Fairchild Semiconductor International