RF MOSFET Power Transistor, 12OW, 28V 2 - 175 MHz DU2812OV Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices .. Absolute Maximum Ratings at 25°C Electrical Characteristics Parameter Symbol Voltage Min Max Units 65 - V Test Conditions Drain-Source Breakdown Drain-Source Leakage Current ’05s 6.0 mA V,,=28.0 v, v,,=o.o V’ Gate-Source Leakage Current ‘GSS 6.0 pA v,,=20.0 v, v,,=o.o V’ Gate Threshold Voltage ForwardTransconductance L at 25°C BV,,, V,,=O.O V, l,s=30.0 mA’ V GSfW 2.0 6.0 V V,,=lO.O V, 1,,=600.0 GM 3.0 - S V,,=lO.O V, 1,,=6000.0 mA’ Input Capacitance C ISS 270 pF V,,=28.0 V, F=l .O MHz’ Output Capacitance C oss 240 pF V,,=28.0 V, F=l .O MHz’ Reverse Capacitance C Rss 48 PF V,,=28.0 V, F=l .O MHz’ A, AV,,=l .O V, 80 us Pulse’ Power Gain GP 13 - dB V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz Drain Efficiency ‘1D 60 - % V,,=28.0 V, I,,=600 mA, P,,fl20.0 W, F=l7.5 MHz Return Loss 5 10 - % V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz - 3O:l - V,,=28.0 V, I,,=600 mA, P,e120.0 W, F=175 MHz Load Mismatch Tolerance VSWR-T * Per side Specifications Subject to Change Without Notke. MIA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 D Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, DU2812OV 12OW, 28V v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V&z8 EFFICIENCY V I,,=600 mA P,,,=l20 W V,,=28 vs FREQUENCY V I,,=600 mA P,,=l20 W 70 25 20 5 s z d 15 A 50 10 0 50 150 FREQUENCY POWER OUTPUT I’,,=28 200 0 25 (MHz) 100 FREQUENCY vs POWER INPUT POWER OUTPUT V I,,=600 mA F=175 MHz 140 - 20 L 0.1 50 150 VOLTAGE mA P,,=3.0 W I 0.2 0.3 1 2 3 4 5 6 7 6 200 (MHz) vs SUPPLY I,,=600 175 I 29 9 POWER INPUT(W) 25 SUPPLY VOLTAGE 30 33 M/A-COM, Inc. (V) Specifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 12OW, 28V DU2812OV v2.00 Typical Device Impedance Frequency (MHz) ) ZLOAo (OHMS) Z,,, (OHMS) 30 3.0 -j 12.5 100 1.5 - j 8.5 7.0 + j 6.5 175 1.0 - j 6.0 6.5 + j 5.0 V,,=28 Z,, is the series equivalent input impedance Z LOAD is the optimum series equivalent 8.0 +j 6.0 ) - ,. V, I,,=.600 mA, PoUs=120 Watts of the device from gate to gate. load impedance as measured from drain to drain. RF Test Fixture PARTS LIST TRIMMER WPAC!ToR CMAC~OR TulHMER UCQF O.WlpF CAPACrrOR CAPACrroR SSPF CAPAcltoR SopF ELEcTRcLs-Tx S-SGPF c4mcrOR o.so’xo.lo’TFucs loow=so ON mAuocv.,25’x O.STXO.IO’TRACEON ’02s LOOP SOAR0 7.5 TURNS OF NO. 20 AWG COPPER RESISTOR 13 OHMS 2 WATTS REsKroR 10x ONMS so WM VOLTS SALUN CORES. 2 TURNS WIRE X 0.31’ OF so ONM coAxTNRU 2srAcKPoLE~.I522 41 TRAMFORMER 2 STACKPOLE 2 TURNS 57.1S22 SAWN OF 2 M ONM COAX TNRU CORES ou2s1m” Flu Specifications 0.082 Subject to Change Without Notice. WA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020