FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). • –10 A, –20 V. RDS(ON) = 13 mΩ @ V GS = –4.5 V RDS(ON) = 17 mΩ @ V GS = –2.5 V Applications • High performance trench technology for extremely low RDS(ON) • Low gate charge • Power management • High current and power handling capability • Load switch • Battery protection DD DD DD DD SO-8 Pin 1 SO-8 G G S S SS SS Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage ±8 V ID Drain Current –10 A PD Power Dissipation for Single Operation – Continuous (Note 1a) – Pulsed –50 (Note 1a) 2.5 (Note 1b) 1.5 (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range W 1.2 –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6575 FDS6575 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6575 Rev F(W) FDS6575 September 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V –13 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –10 A 57 S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 4951 pF 884 pF 451 pF –0.4 –0.6 3 V GS = –4.5 V, ID = –10 A V GS = –2.5 V, ID = –9 A V GS = –4.5 V, ID =–10A, TJ =125°C 8.5 11 11 mV/°C 13 17 20 mΩ –50 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) V DD = –10V, V GS = –4.5 V, 16 29 ns 9 18 ns Turn–Off Delay Time 196 314 ns tf Turn–Off Fall Time 78 125 ns Qg Total Gate Charge 53 74 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge V DS = –10 V, V GS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –10 A, 6 nC 12 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.1 A Voltage (Note 2) –0.6 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1in2 pad of 2 oz copper b) 105 °C/W when mounted on a .04 in2 pad of 2 oz copper c) 125 °C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6575 Rev F(W) FDS6575 Electrical Characteristics FDS6575 Typical Characteristics 50 2.2 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V -3.0V -ID, DRAIN CURRENT (A) 40 -2.0V -1.5V 30 20 10 0 2 V GS = - 1.5V 1.8 1.6 1.4 -2.0V -2.5V 1.2 -3.0V -3.5V -4.5V 1 0.8 0 0.5 1 1.5 2 0 10 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 0.035 ID = -10A V GS = - 4.5V ID = -5A 1.4 1.2 1 0.8 0.6 0.03 0.025 0.02 T A = 125o C 0.015 0.01 T A = 25o C 0.005 -50 -25 0 25 50 75 100 125 150 175 0 1 2 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 50 25o C TA = -55oC 40 -I S, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 30 -ID , DRAIN CURRENT (A) 125oC 30 20 10 0 V GS = 0V 1 T A = 125o C 0.1 25o C 0.01 -55o C 0.001 0.0001 0 0.5 1 1.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 0 0.2 0.4 0.6 0.8 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6575 Rev F(W) FDS6575 Typical Characteristics 6000 ID = -10A VDS = -5V 5000 4 -15V 3 2 4000 3000 2000 C OSS 1 1000 CRSS 0 0 0 10 20 30 40 50 60 0 5 Q g, GATE CHARGE (nC) 20 50 P(pk), PEAK TRANSIENT POWER (W) 100µ 1ms 10ms RDS(ON) LIMIT 100ms 1s 10s DC 1 V GS = -4.5V SINGLE PULSE RθJA = 125o C/W 0.1 TA = 25 oC 0.01 0.01 0.1 1 10 SINGLE PULSE Rθ JA = 125°C/W T A = 25°C 40 30 20 10 0 0.001 100 0.01 0.1 1 10 100 t1 , TIME (sec) -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 10 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -10V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6575 Rev F(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4