FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC(cont) = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89 package. B Features • Very low saturation voltage • High gain • Small outline package E Applications • Motor drive • Strobe flash • MOSFET and IGBT gate driving • DC -DC converters E C C B Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1,000 FCX1051ATA Pinout - top view Device mark 051 Issue 2 - July 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com FCX1051A Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Peak pulse current(a) ICM 10 A IC 3 A Ptot 1(b) W 2(c) W -55 to +150 °C Continuous collector current Power dissipation at Tamb = 25°C Operating and storage temperature range Tj;Tstg NOTES: (a) Measured under pulsed conditions. Pulse width=300s. Duty cycle ⱕ2%. Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. (b) Recommended Ptot calculated using FR4 measuring 15x15x0.6mm. (c) Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. Typical characteristics Issue 2 - July 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com FCX1051A Electrical characteristics (@ Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Typ. Unit Conditions 150 V IC = 100µA VCES 150 V IC = 100µA Collector-emitter breakdown voltage VCEO 40 V IC = 10mA Collector-emitter breakdown voltage VCEV 150 V IC =100µA, VEB = 1V Emitter-base breakdown voltage V(BR)EBO 5 V IE = 100µA Collector cut-off current ICBO 0.3 10 nA VCB = 120V Emitter cut-off current IEBO 0.3 10 nA VEB = 4V Collector emitter cutoff current ICES 0.3 10 nA VCES = 120V Collector-emitter saturation voltage VCE(sat) 17 25 mV IC = 0.2A, IB = 10mA (*) 85 120 mV IC = 1A, IB = 10mA (*) 140 180 mV IC = 2A, IB = 20mA (*) 170 250 mV IC = 3A, IB = 40mA (*) 250 340 mV IC = 5A, IB = 100mA (*) Base-emitter saturation VBE(sat) voltage 880 1000 mV IC = 3A, IB = 40mA (*) Base-emitter turn-on voltage VBE(on) 840 950 mV IC = 3A, VCE = 2V (*) Static forward current transfer ratio hFE 290 440 1200 270 450 IC = 1A, VCE = 2V (*) 270 360 IC = 3A, VCE = 2V (*) 130 220 IC = 5A, VCE = 2V (*) 40 55 IC = 10A, VCE = 2V (*) Transition frequency fT 155 Output capacitance Cobo 27 Switching times ton toff Max. IC = 10mA, VCE = 2V (*) MHz 40 IC = 50mA, VCE = 10V f = 100MHz pF VCB = 10V, f = 1MHz 220 ns IC = 3A, IB = 30mA, VCC = 10V 540 ns IC = 3A, IB = 30mA, VCC = 10V NOTES: (*) Measured under pulsed conditions. Pulse width=300s. Duty cycle ⱕ2%. Issue 2 - July 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com FCX1051A Typical characteristics 0.5 0.5 +25°C IC/IB=100 0.4 VCE(sat) - (V) VCE(sat) - (V) 0.4 IC/IB=50 IC/IB=100 IC/IB=200 0.3 0.2 0.1 -55°C +25°C +100°C +150°C 0.3 0.2 0.1 0 0 1m 10m 100m 1 IC - Collector Current (A) 10 1m 10m 100m 1 10 IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 600 IC/IB=100 1.6 +100°C VBE(sat) - (V) hFE - Typical gain VCE=2V 450 +25°C 300 -55°C -55°C +25°C +100°C +150°C 1.2 0.8 0.4 150 0 0 1m 10m 100m 1 IC - Collector Current (A) 10 1m 10m 100m 1 10 IC - Collector Current (A) VBE(sat) v IC hFE v IC 1.0 VBE(on) - (V) 0.8 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 1m 10m 100m 1 10 IC - Collector Current (A) VBE(on) v IC Issue 2 - July 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com FCX1051A Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - July 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com FCX1051A Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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