DIODES FCX1051A

FCX1051A
SOT89 NPN medium power transistor
Summary
BVCEO > 40V
IC(cont) = 3A
VCE(sat) < 120mV @ 1A
RCE(sat) = 57m⍀
PD = 2W
Complimentary type - FCX1151A
Description
C
An NPN low voltage, high gain bipolar transistor offering very low
saturation voltage and excellent current handling in the SOT89
package.
B
Features
•
Very low saturation voltage
•
High gain
•
Small outline package
E
Applications
•
Motor drive
•
Strobe flash
•
MOSFET and IGBT gate driving
•
DC -DC converters
E
C
C
B
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1,000
FCX1051ATA
Pinout - top view
Device mark
051
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FCX1051A
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Peak pulse current(a)
ICM
10
A
IC
3
A
Ptot
1(b)
W
2(c)
W
-55 to +150
°C
Continuous collector current
Power dissipation at Tamb = 25°C
Operating and storage temperature range
Tj;Tstg
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮s. Duty cycle ⱕ2%. Spice parameter data is available upon
request for these devices. Refer to the handling instructions for soldering surface mount components.
(b) Recommended Ptot calculated using FR4 measuring 15x15x0.6mm.
(c) Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring
40x40x0.6mm and using comparable measurement methods adopted by other suppliers.
Typical characteristics
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FCX1051A
Electrical characteristics (@ Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Collector-base
breakdown voltage
V(BR)CBO
Collector-emitter
breakdown voltage
Typ.
Unit
Conditions
150
V
IC = 100µA
VCES
150
V
IC = 100µA
Collector-emitter
breakdown voltage
VCEO
40
V
IC = 10mA
Collector-emitter
breakdown voltage
VCEV
150
V
IC =100µA, VEB = 1V
Emitter-base
breakdown voltage
V(BR)EBO
5
V
IE = 100µA
Collector cut-off
current
ICBO
0.3
10
nA
VCB = 120V
Emitter cut-off current
IEBO
0.3
10
nA
VEB = 4V
Collector emitter cutoff current
ICES
0.3
10
nA
VCES = 120V
Collector-emitter
saturation voltage
VCE(sat)
17
25
mV
IC = 0.2A, IB = 10mA (*)
85
120
mV
IC = 1A, IB = 10mA (*)
140
180
mV
IC = 2A, IB = 20mA (*)
170
250
mV
IC = 3A, IB = 40mA (*)
250
340
mV
IC = 5A, IB = 100mA (*)
Base-emitter saturation VBE(sat)
voltage
880
1000
mV
IC = 3A, IB = 40mA (*)
Base-emitter turn-on
voltage
VBE(on)
840
950
mV
IC = 3A, VCE = 2V (*)
Static forward current
transfer ratio
hFE
290
440
1200
270
450
IC = 1A, VCE = 2V (*)
270
360
IC = 3A, VCE = 2V (*)
130
220
IC = 5A, VCE = 2V (*)
40
55
IC = 10A, VCE = 2V (*)
Transition frequency
fT
155
Output capacitance
Cobo
27
Switching times
ton
toff
Max.
IC = 10mA, VCE = 2V (*)
MHz
40
IC = 50mA, VCE = 10V
f = 100MHz
pF
VCB = 10V, f = 1MHz
220
ns
IC = 3A, IB = 30mA, VCC = 10V
540
ns
IC = 3A, IB = 30mA, VCC = 10V
NOTES:
(*) Measured under pulsed conditions. Pulse width=300␮s. Duty cycle ⱕ2%.
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FCX1051A
Typical characteristics
0.5
0.5
+25°C
IC/IB=100
0.4
VCE(sat) - (V)
VCE(sat) - (V)
0.4
IC/IB=50
IC/IB=100
IC/IB=200
0.3
0.2
0.1
-55°C
+25°C
+100°C
+150°C
0.3
0.2
0.1
0
0
1m
10m
100m
1
IC - Collector Current (A)
10
1m
10m
100m
1
10
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
750
600
IC/IB=100
1.6
+100°C
VBE(sat) - (V)
hFE - Typical gain
VCE=2V
450
+25°C
300
-55°C
-55°C
+25°C
+100°C
+150°C
1.2
0.8
0.4
150
0
0
1m
10m
100m
1
IC - Collector Current (A)
10
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(sat) v IC
hFE v IC
1.0
VBE(on) - (V)
0.8
0.6
0.4
-55°C
+25°C
+100°C
+150°C
0.2
0
1m
10m
100m
1
10
IC - Collector Current (A)
VBE(on) v IC
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FCX1051A
Package outline - SOT89
D
A
C
D1
E
H
E1
L
B
e
B1
DIM
e1
Millimeters
Inches
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
B
0.44
0.56
0.017
B1
0.36
0.48
C
0.35
D
D1
DIM
Millimeters
Inches
Min
Max
Min
Max
E
2.29
2.60
0.090
0.102
0.022
E1
2.13
2.29
0.084
0.090
0.014
0.019
e
1.50 BSC
0.059 BSC
0.44
0.014
0.017
e1
3.00 BSC
0.118 BSC
4.40
4.60
0.173
0.181
H
3.94
4.25
0.155
0.167
1.52
1.83
0.064
0.072
L
0.89
1.20
0.035
0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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FCX1051A
Definitions
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service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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