RMPA2259 28 dBm WCDMA PowerEdge™ Power Amplifier Module Features General Description • 40% CDMA efficiency at +28dBm average output power • Single positive-supply operation and low power and shutdown modes • Meets WCDMA/UTMS and HSDPA performance requirements • Compact Lead-free compliant LCC package - 4.0 x 4.0 x 1.5 mm • Industry standard pinout • Internally matched to 50Ω and DC blocked RF input/ output The RMPA2259 power amplifier module (PAM) is designed for WCDMA/UTMS and HSDPA applications. The 2-stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 GND 3 Vmode 4 Vref 5 10 Vcc2 INPUT MATCH 9 GND OUTPUT MATCH BIAS/MODE SWITCH 8 RF OUT 7 GND 6 GND 11 (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation RMPA2259 Rev. E 1 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module May 2005 Symbol Parameter VCC1, V CC2 Supply Voltages Vref Reference Voltage Vmode Power Control Voltage PIN RF Input Power TSTG Storage Temperature Ratings Units 5.0 V 2.6 to 3.5 V 3.5 V +10 dBm -55 to +150 °C Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Electrical Characteristics1 Symbol f Parameter Operating Frequency Min Typ 1920 Max Units 1980 MHz Comments WCDMA Operation Gp Po Power Gain Linear Output Power 26.5 dB Po=+28dBm; Vmode=0V 24 dB Po=+16dBm; Vmode≥2.0V 28 16 PAEd Itot dBm Vmode=0V dBm Vmode≥2.0V PAEd (digital) @ +28dBm 40 % PAEd (digital) @ +16dBm 9 % Vmode≥2.0V PAEd (digital) @ +16dBm 20 % Vmode≥2.0V, Vcc=1.4V High Power Total Current 450 mA Po=+28dBm, Vmode=0V Low Power Total Current 130 mA Adjacent Channel Leakage Ratio ACLR1 ACLR2 Vmode=0V Po=+16dBm, Vmode≥2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH+1 DCDCH ±5.0MHz Offset ±10.0MHz Offset -40 dBc Po=+28dBm; Vmode=0V -43 dBc Po=+16dBm; Vmode≥2.0V -53 dBc Po=+28dBm; Vmode=0V -66 dBc Po=+16dBm; Vmode≥2.0V General Characteristics VSWR NF Input Impedance 2.0:1 Noise Figure 3 Rx No Receive Band Noise Power 2fo-5fo Harmonic Suppression3 S Tc dB -139 dBm/Hz Po≤+28dBm; 2110 to 2170MHz -30 dBc Spurious Outputs -60 dBc Ruggedness w/ Load Mismatch3 10:1 2,3 Case Operating Temperature -30 Po≤+28dBm Load VSWR ≤ 5.0:1 No permanent damage 85 °C DC Characteristics Iccq Quiescent Current 50 Iref Reference Current 5 8 mA Po≤+28dBm Shutdown Leakage Current 1 5 µA No applied RF signal Icc(off) mA Vmode≥2.0V Notes: 1: All parameters met at Tc = +25°C, Vcc = +3.4V, f = 1950MHz, and load VSWR ≤ 1.2:1. 2: All phase angles. 3: Guaranteed by design. ©2005 Fairchild Semiconductor Corporation RMPA2259 Rev. E 2 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Absolute Ratings 1 Symbol f Vcc1, Vcc2 Vref Vmode Pout Tc Parameter Min Operating Frequency Typ 1920 Max Units 1980 MHz Supply Voltage 3.0 3.4 4.2 V Reference Voltage Operating Shutdown 2.7 0 2.85 3.1 0.5 V V Bias Control Voltage Low-Power High-Power 1.8 0 2.0 3.0 0.5 V V +28 +16 dBm dBm +85 °C Linear Output Power High-Power Low-Power Case Operating Temperature -30 Note: 1: RF input power for WCDMA Pout = +28dBm. DC Turn On Sequence: 1. Vcc1 = Vcc2 = 3.4V (typical) 2. Vref = 2.85V (typical) 3. High-Power: Vmode = 0V (Pout > 16dBm) Low-Power: Vmode = 2.0V (Pout < 16dBm) Performance Data RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm 33 45 32 44 31 43 30 42 29 41 PAE (%) GAIN (dB) RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm 28 27 40 39 26 38 25 37 24 36 23 1900 1920 1940 1960 1980 35 1900 2000 Figure 2. -42 -34 -44 -36 -46 ACLR2 (dBc) ACLR1 (dBc) -40 -38 -40 -42 RMPA2259 Rev. E -50 -52 -54 -46 -56 -48 -58 1960 1980 2000 -48 -44 1940 1980 RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm -32 ©2005 Fairchild Semiconductor Corporation 1960 Figure 1. -30 1920 1940 FREQUENCY (MHz) RMPA2259 W-CDMA 4x4mm2 PAM Vcc = 3.4V, Vref = 2.85V, Pout = 28dBm -50 1900 1920 FREQUENCY (MHz) 2000 -60 1900 1920 1940 1960 FREQUENCY (MHz) FREQUENCY (MHz) Figure 3. Figure 4. 3 1980 2000 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Recommended Operating Conditions1 The following charts show measured performance of the PA module in low-power mode (Vmode = +2.0V) at +16dBm output power and over a range of supply voltages from 3.4V nominal to 1.2V. Power-added efficiency is more than doubled from 9.5 percent to nearly 25 percent (Vcc = 1.2V) while maintaining a typical ACLR1 of -46dBc and ACLR2 of approximately -60dBc. In addition to high-power/low-power bias modes, the efficiency of the PA module can be significantly increased at backed-off RF power levels by dynamically varying the supply voltage (Vcc) applied to the amplifier. Since mobile handsets and power amplifiers frequently operate at 10– 20dB back-off, or more, from maximum rated linear power, battery life is highly dependent on the DC power consumed at antenna power levels in the range of 0 to +16dBm. The reduced demand on transmitted RF power allows the PA supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for CDMA modulation with excellent margin. High-efficiency DC-DC converters are now available to implement switched-voltage operation. Operation at even lower levels of Vcc supply voltage are possible with a further restriction on the maximum RF output power. As shown below, the PA module can be biased at a supply voltage of as low as 0.7V with an efficiency as high as 10–12 percent at +8dBm output power. Excellent signal linearity is still maintained even under this low supply voltage condition. Performance Data (continued) Low-Power Mode (Po = +16dBm) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm 30 30 29 25 28 26 25 VCC = 1.2V VCC = 3.4V VCC = 3.0V 20 PAE (%) GAIN (dB) 27 VCC = 2.0V VCC = 1.5V 26 15 VCC = 1.5V VCC = 2.0V VCC = 1.2V 23 10 22 VCC = 3.0V VCC = 3.4V 21 20 1900 1920 1940 1960 5 1900 2000 1960 1980 Figure 5. Figure 6. 2000 RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm -50 -52 -39 -54 -41 -56 VCC = 3.0V ACLR2 (dBc) VCC = 3.4V VCC = 2.0V VCC = 1.5V -45 -47 1940 FREQUENCY (MHz) -37 -43 1920 FREQUENCY (MHz) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm -35 ACLR1 (dBc) 1980 VCC = 1.2V -58 VCC = 1.2V -60 -62 -49 -64 -51 -66 -53 -68 -55 1900 1920 1940 1960 -70 1900 2000 VCC = 3.4V 1920 1940 1960 1980 FREQUENCY (MHz) FREQUENCY (MHz) Figure 7. Figure 8. ©2005 Fairchild Semiconductor Corporation RMPA2259 Rev. E 1980 VCC = 1.5V VCC = 2.0V VCC = 3.0V 4 2000 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Efficiency Improvement Application RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz 30 32 28 28 26 PAE (%) Gain (dB) 24 24 22 20 16 20 12 18 16 0.5 1 1.5 2 2.5 3 3.5 8 0.5 4 1 1.5 2 2.5 VCC (V) VCC (V) Figure 9. Figure 10. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz 3 3.5 4 RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 16dBm, Freq = 1.95GHz -26 -48 -28 -50 -30 -52 -32 -54 ACLR2 (dBc) ACLR1 (dBc) -34 -36 -38 -40 -42 -58 -60 -62 -44 -64 -46 -66 -48 -50 0.5 -56 1 1.5 2 2.5 3 3.5 -68 0.5 4 VCC (V) RMPA2259 Rev. E 1.5 2 2.5 3 3.5 4 VCC (V) Figure 11. ©2005 Fairchild Semiconductor Corporation 1 Figure 12. 5 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Performance Data (continued) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz 30 24 28 20 24 PAE (%) GAIN (dB) 26 22 16 12 20 8 18 16 0.5 1 1.5 2 2.5 3 3.5 4 0.5 4 1 1.5 2 2.5 VCC (V) VCC (V) Figure 13. Figure 14. RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz 3 3.5 4 RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 12dBm, Freq = 1.95GHz -26 -48 -28 -50 -30 -52 -32 -54 ACLR2 (dBc) ACLR1 (dBc) -34 -36 -38 -40 -42 -58 -60 -62 -44 -64 -46 -66 -48 -50 0.5 -56 1 1.5 2 2.5 3 3.5 -68 0.5 4 VCC (V) RMPA2259 Rev. E 1.5 2 2.5 3 3.5 4 VCC (V) Figure 15. ©2005 Fairchild Semiconductor Corporation 1 Figure 16. 6 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Performance Data (continued) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz 30 14 28 12 26 10 24 8 PAE (%) GAIN (dB) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz 22 20 4 18 2 16 0.5 1 1.5 2 2.5 3 3.5 0 0.5 4 -54 -41 -56 ACLR2 (dBc) -52 -43 -45 -47 -62 -51 -66 -53 -68 3 3.5 -70 0.5 4 VCC (V) 1 1.5 2 2.5 3 3.5 4 VCC (V) Figure 19. ©2005 Fairchild Semiconductor Corporation 4 -60 -64 2.5 3.5 -58 -49 2 3 RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz -39 RMPA2259 Rev. E 2.5 Figure 18. -37 1.5 2 Figure 17. -50 1 1.5 VCC (V) -35 -55 0.5 1 VCC (V) RMPA2259 W-CDMA 4x4mm2 PAM Vref = 2.85V, Pout = 8dBm, Freq = 1.95GHz ACLR1 (dBc) 6 Figure 20. 7 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Performance Data (continued) Materials List Qty Item No. 1 1 Part Number Description G657553-1 V2 Vendor PC Board Fairchild 2 2 #142-0701-841 SMA Connector Johnson 3 3 #2340-5211TN Terminals 3M Ref 4 G657687 Assembly, RMPA2059 Fairchild 3 5 GRM39XR102KS0V 1000pF Capacitor (0603) Murata 3 5 (Alt) ECJ-1V81H102K 1000pF Capacitor (0603) Panasonic 2 6 C3216X5R1A335M 3.3µF Capacitor (1206) TDK 1 7 1 7 (Alt) GRM39YSV104Z16V 0.1µF Capacitor (0603) Murata ECJ-1VB1CID4K 0.1µF Capacitor (0603) Panasonic A/R 8 SN63 Solder Paste Indium Corp. A/R 9 SN96 Solder Paste Indium Corp Evaluation Board Schematic 3.3 µF 1000 pF 1 VCC1 SMA1 RF IN 50 Ohm TRL 2259 4 YWWXX VREF 5 8 50 Ohm TRL SMA2 RF OUT 3, 6, 7, 9 11 1000 pF 0.1 µF ©2005 Fairchild Semiconductor Corporation VCC2 10 2 VMODE RMPA2259 Rev. E 3.3 µF 1000 pF (PACKAGE BASE) 8 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Evaluation Board Layout I/O 1 INDICATOR TOP VIEW (4.00mm +.100 –.050 ) SQUARE 1 10 2 9 3 2259 8 4 YWWXX 7 Y W 2259 WX X 6 5 1.60mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .10mm .30mm TYP. .10mm .85mm TYP. 3.65mm 11 .40mm .45mm 2 1 1.08mm .18mm 1.84mm DETAIL A. TYP. BOTTOM VIEW Signal Descriptions Pin # Signal Name Description 1 Vcc1 Reference Voltage 2 RF In High Power/Low Power Mode Control 3 GND Ground 4 Vmode RF Input Signal 5 Vref Supply Voltage to Input Stage 6 GND Ground 7 GND Ground 8 RF Out RF Output Signal 9 GND Ground 10 Vcc2 Supply Voltage to Output Stage 11 GND Paddle Ground ©2005 Fairchild Semiconductor Corporation RMPA2259 Rev. E 9 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Package Outline CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: • Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. • Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. • Static Sensitivity: Follow ESD precautions to protect against ESD damage: – A properly grounded static-dissipative surface on which to place devices. – Static-dissipative floor or mat. – A properly grounded conductive wrist strap for each person to wear while handling devices. • General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. • Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. • Dry-bake devices at 125°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C baking temperature. • Assemble the dry-baked devices within 7 days of removal from the oven. • During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30°C • If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. ©2005 Fairchild Semiconductor Corporation RMPA2259 Rev. E 10 www.fairchildsemi.com RMPA2259 28 dBm WCDMA Power EdgeTM Power Amplifier Module Applications Information TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 ©2005 Fairchild Semiconductor Corporation RMPA2259 Rev. E 11 www.fairchildsemi.com