December 1996 NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel 3 A, 20 V, RDS(ON)=0.06 Ω @ VGS=4.5 V RDS(ON)=0.075 Ω @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON)=0.13 Ω @ VGS=-4.5 V RDS(ON)=0.19 Ω @ VGS=-2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________ Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous 5 4 6 3 7 2 8 1 T A= 25°C unless otherwise noted (Note 1) - Pulsed PD Power Dissipation for Single Operation TJ,TSTG Operating and Storage Temperature Range (Note 1) N-Channel P-Channel Units 20 -20 V 8 -8 V 3 -2 A 15 -10 0.8 W -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W © 1997 Fairchild Semiconductor Corporation NDH8320C Rev.B Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min N-Ch 20 -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA P-Ch IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V N-Ch V V TJ = 55oC VDS = -16 V, VGS = 0 V 1 µA 10 µA P-Ch -1 µA o -10 µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS= 0 V All -100 nA V TJ = 55 C ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage N-Ch VDS = VGS, ID = 250 µA TJ = 125oC P-Ch VDS = VGS, ID = -250 µA TJ = 125oC RDS(ON) Static Drain-Source On-Resistance 0.4 0.7 1 0.3 0.45 0.7 -0.4 -0.6 -1 -0.3 -0.42 -0.7 0.047 0.06 0.07 0.11 0.059 0.075 N-Ch VGS = 4.5 V, ID = 3 A TJ = 125oC VGS = 2.7 V, ID = 2.6 A VGS = -4.5 V, ID = -2 A P-Ch o TJ = 125 C VGS = -2.7 V, ID = -1.7 A ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V N-Ch 15 P-Ch -10 VGS = 2.7 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V Forward Transconductance 0.13 0.15 0.23 0.147 0.19 A 5 VGS = -2.7 V, VDS = -5 V gFS 0.102 Ω -4 VDS = 5 V, ID = 3 A N-Ch 10 VDS = -5 V, ID = -2 A P-Ch 5 N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch 415 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz P-Ch 515 N-Ch 220 P-Ch 250 N-Ch 85 P-Ch 85 pF pF pF NDH8320C Rev.B Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type N-Channel VDD = 5 V, ID = 1 A, VGEN = 4.5 V, RGEN = 6 Ω P-Channel VDD = -5 V, ID = -1 A, VGEN = -4.5 V, RGEN = 6 Ω Min Typ Max Units N-Ch 8 15 ns P-Ch 10 20 N-Ch 25 45 P-Ch 27 50 N-Ch 30 55 P-Ch 37 65 N-Ch 8 15 SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time Turn - On Rise Time tr tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Gate-Drain Charge Qgd P-Ch 39 75 N-Channel VDS = 10 V, ID = 3 A, VGS = 4.5 V N-Ch 10 15 P-Ch 7.8 11 N-Ch 0.9 P-Channel VDS = -10 V, ID = -2 A, VGS = -4.5 V P-Ch 1.2 N-Ch 3.5 P-Ch 1.8 ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 0.67 A VGS = 0 V, IS = -0.67 A (Note2) (Note2) N-Ch 0.67 P-Ch -0.67 N-Ch 0.7 1.2 P-Ch -0.75 -1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. P D(t ) = T J −T A R θJ A(t ) = T J −T A R θJ C+R θCA(t ) = I 2D (t ) × RDS(ON)@TJ Typical RθJA for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment: 156oC/W when mounted on a 0.0025 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH8320C Rev.B Typical Electrical Characteristics: N-Channel VGS =4.5V 3.0 2 2.7 2.5 R DS(on), NORMALIZED 12 2.0 9 6 3 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 15 0 0 0.5 1 V DS 1.5 2 2.5 1.75 VGS = 2.0V 1.5 2.5 2.7 1.25 3.0 3.5 4.5 1 0.75 3 0 3 6 , DRAIN-SOURCE VOLTAGE (V) 9 12 15 I D , DRAIN CURRENT (A) Figure 1. N-Channel On-Region Characteristics. Figure 2. N-Channel On-Resistance Variation with Gate Voltage and Drain Current. 1 .8 R DS(on) , NORMALIZED V GS = 4.5V DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED I D = 3A 1 .4 1 .2 1 0 .8 0 .6 0 .4 -50 -25 0 25 50 75 100 125 DRAIN-SOURCE ON-RESISTANCE 2 1 .6 VGS = 4.5V TJ = 125°C 1.5 TJ , JUNCTION TEMPERATURE (°C) Vth , NORMALIZED 125°C 6 4 D I , DRAIN CURRENT (A) 25°C 8 2 0 0 0.5 1 1.5 3 6 9 12 15 Figure 4. N-Channel On-Resistance Variation with Drain Current and Temperature. 2 2.5 3 GATE-SOURCE THRESHOLD VOLTAGE TJ = -55°C V DS =- 5V 0 I D , DRAIN CURRENT (A) Figure 3. N-Channel On-Resistance Variation with Temperature. 10 -55°C 0.5 0 150 25°C 1 1.3 VDS = VGS 1.2 I D = 250µA 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. N-Channel Transfer Characteristics. Figure 6. N-Channel Gate Threshold Variation with Temperature. NDH8320C Rev.B 10 5 1.15 IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE Typical Electrical Characteristics: N-Channel (continued) ID = 250µA 1.1 1.05 1 0.95 0.9 -50 -25 0 T J 25 50 75 100 125 150 VGS =0V 1 TJ = 125°C 0.1 0.001 0.0001 0 0.2 , JUNCTION TEMPERATURE (°C) V SD 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) Figure 8. N-Channel Body Diode Forward Voltage Variation with Current and Temperature. 1200 5 VDS = 5V I D = 3A 500 Ciss 300 Coss , GATE-SOURCE VOLTAGE (V) 800 200 Crss 100 V GS = 0 V 40 0 .1 0 .2 V DS 15V 3 2 1 GS f = 1 MHz 10 4 V CAPACITANCE (pF) -55°C 0.01 Figure 7. N-Channel Breakdown Voltage Variation with Temperature. 0 .5 1 3 5 , DRAIN TO SOURCE VOLTAGE (V) 10 20 0 0 2 4 6 8 10 12 Q g , GATE CHARGE (nC) Figure 9. N-Channel Capacitance Characteristics. gFS , TRANSCONDUCTANCE (SIEMENS) 25°C Figure 10. N-Channel Gate Charge Characteristics. 20 V DS = 5V TJ = -55°C 16 25°C 12 125°C 8 4 0 0 2 4 6 8 10 ID , DRAIN CURRENT (A) Figure 11. N-Channel Transconductance Variation with Drain Current and Temperature. NDH8320C Rev.B Typical Electrical Characteristics: P-Channel (continued) 2 V GS = -5.0V -4.5 R DS(on) , NORMALIZED -4.0 -16 -3.5 -12 -3.0 -2.7 -8 -2.5 -4 -2.0 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) -20 0 0 -1 -2 V DS -3 -4 -3.0 -3.5 -4.0 1.2 -4.5 -5.0 1 0 -4 -8 -20 2 R DS(on) , NORMALIZED V G S =- 4.5V 1.2 1 0.8 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 VGS = -4.5V 25°C 1 -55°C 0.5 150 TJ = 125°C 1.5 0 -4 -8 I J -10 V DS = -5V T = -55°C J 25°C VGS(th) , NORMALIZED -8 125°C -6 D -4 -2 -1 -1.5 V GS -2 -2.5 -3 , GATE TO SOURCE VOLTAGE (V) Figure 16. P-Channel Transfer Characteristics. -3.5 D -12 -16 -20 , DRAIN CURRENT (A) Figure 15. P-Channel On-Resistance Variation with Drain Current and Temperature. GATE-SOURCE THRESHOLD VOLTAGE Figure 14. P-Channel On-Resistance Variation with Temperature. I , DRAIN CURRENT (A) -16 Figure 13. P-Channel On-Resistance Variation with Gate Voltage and Drain Current. I D = -2A 0 -0.5 -12 I D , DRAIN CURRENT (A) DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.7 1.4 , DRAIN-SOURCE VOLTAGE (V) 1.6 0.6 -50 V GS = -2.5 V 1.6 0.8 -5 Figure 12. P-Channel On-Region Characteristics. 1.4 1.8 1.2 VDS = VGS I D = -250µA 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) J Figure 17. P-Channel Gate Threshold Variation with Temperature. NDH8320C Rev.B 10 1.1 -IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE Typical Electrical Characteristics: P-Channel (continued) I D = -250µA 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 -25 0 25 50 75 100 125 VGS = 0V 4 TJ = 125°C 1 0.1 25°C -55°C 0.01 0.001 0.0001 150 0 T , JUNCTION TEMPERATURE (°C) J Figure 18. P-Channel Breakdown Voltage Variation with Temperature. SD 0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) Figure 19. P-Channel Body Diode Forward Voltage Variation with Current and Temperature. 5 1200 I , GATE-SOURCE VOLTAGE (V) 800 Ciss 500 300 Coss 200 f = 1 MHz V GS = 0 V 100 D = -2A V DS = -5V 4 -10V -15V 3 2 1 -V GS Crss 50 0.1 0 0.2 0.5 1 2 5 10 20 0 2 Q -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 20. P-Channel Capacitance Characteristics. g FS, TRANSCONDUCTANCE (SIEMENS) CAPACITANCE (pF) 0.2 -V g 4 , GATE CHARGE (nC) 6 8 Figure 21. P-Channel Gate Charge Characteristics. 12 V DS = - 5V TJ = -55°C 10 25°C 8 125°C 6 4 2 0 0 -5 -10 -15 -20 I D , DRAIN CURRENT (A) Figure 22. P-Channel Transconductance Variation with Drain Current and Temperature. NDH8320C Rev.B Typical Thermal Characteristics: N & P-Channel 20 40 10 R LIM IT 1m 10 10 1 10 V GS = 4.5V SINGLE PULSE 5 s ms 0m s s DC R J A = See Note 1 θ 0.05 TA 10 10 s 2 RD S(O LI N) = 25°C 0.2 1 DS 1 2 5 10 , DRAIN-SOURCE VOLTAGE (V) 20 s ms s 10 s DC V GS = -4.5V 0.1 0.05 0.01 0.1 30 0m 0u s 1s SINGLE PULSE R J A = See Note 1 θ 0.5 V 10 0.5 A 0.01 0.1 1m T MI 10 D 0.1 0u 1s 0.5 D I , DRAIN CURRENT (A) 5 ( DS ) ON 10 -I , DRAIN CURRENT (A) 20 TA = 25°C 0.2 0.5 1 2 5 10 - V DS , DRAIN-SOURCE VOLTAGE (V) 20 40 Figure 24. P-Channel Maximum Safe Operating Area. Figure 23. N-Channel Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R 0.2 0.1 0.1 0.05 θJA (t) = r(t) * R θJA R JA = See Notes 1 θ P(pk) 0.02 0.01 t1 0.01 TJ - T = P * R JA (t) θ Duty Cycle, D = t1 / t2 Single Pulse 0.001 0.0001 t2 0.001 0.01 0.1 1 A 10 100 300 1 t , TIME (sec) Figure 25. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note1 . Transient thermal response will change depending on the circuit board design. VDD t on t d(on) RL V IN tf 90% 90% VOUT R GEN tr V OUT D VGS t off t d(off) 10% 10% DUT G 90% S V IN 50% 50% 10% PULSE WIDTH Figure 26. N or P-Channel Switching Test Circuit. Figure 27. N or P-Channel Switching Waveforms. NDH8320C Rev.B