FAIRCHILD FDP2710

FDP2710
tm
250V N-Channel PowerTrench MOSFET
General Description
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
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Application
50A, 250V, RDS(on) = 36.3mΩ @VGS = 10 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
• PDP application
D
G
G DS
TO-220
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
Ratings
Unit
250
V
± 30
V
50
31.3
A
A
(Note 1)
See Figure 9
A
145
mJ
VGS
Gate-Source voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
(Note 2)
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
4.5
V/ns
260
2.1
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
Thermal Characteristics
Min
Max
Unit
RθJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
--
0.48
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FDP2710 Rev. A
1
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FDP2710 250V N-Channel PowerTrench MOSFET
November 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP2710
FDP2710
TO-220
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
250
--
--
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.25
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V,TC = 125°C
---
---
10
500
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
4.0
5.0
V
--
36.3
42.5
mΩ
--
63
--
S
--
5470
7280
pF
--
426
570
pF
--
97
146
pF
--
80
170
ns
--
252
515
ns
--
112
235
ns
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source On-Resistance
VGS = 10V, ID = 25A
gFS
Forward Transconductance
VDS = 10V, ID = 25A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125V, ID = 50A
VGS = 10V, RGEN = 25Ω
(Note 4, 5)
VDS = 125V, ID = 50A
VGS = 10V
(Note 4, 5)
--
154
320
ns
--
78
101
nC
--
34
--
nC
--
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
50
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
150
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 50A
--
--
1.2
V
trr
Reverse Recovery Time
--
163
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 50A
dIF/dt =100A/μs
--
1.3
--
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 100A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP2710 Rev. A
2
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FDP2710 250V N-Channel PowerTrench MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
ID,Drain Current[A]
100
Figure 2. Transfer Characteristics
250
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
o
150 C
ID,Drain Current[A]
500
10
o
-55 C
10
o
25 C
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 20V
2. 250μs Pulse Test
o
1
0.1
2. TC = 25 C
1
1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
6
8
VGS,Gate-Source Voltage[V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.07
150
100 * Notes :
IS, Reverse Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
1. VGS=0V
0.06
0.05
VGS = 10V
0.04
VGS = 20V
0.03
2. 250μs Pulse Test
o
TA = 150 C
10
o
TA = 25 C
o
0.02
* Note : TJ = 25 C
0
25
50
75
100
ID, Drain Current [A]
125
1
0.2
150
Figure 5. Capacitance Characteristics
6000
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
3000
* Note:
1. VGS = 0V
2. f = 1MHz
Crss
0
-1
10
FDP2710 Rev. A
0
1.2
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
Capacitances [pF]
9000
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
1
10
10
VDS, Drain-Source Voltage [V]
VDS = 50V
3
VDS = 200V
6
4
2
0
30
VDS = 125V
8
* Note : ID = 50A
0
10
20
30
40
50
60
Qg, Total Gate Charge [nC]
70
80
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FDP2710 250V N-Channel PowerTrench MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
rDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250μA
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
* Notes :
1. VGS = 10V
2. ID = 25A
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
60
500
100
50
ID, Drain Current [A]
100μs
Drain Current, ID [A]
1
0
-100
200
Figure 9. Maximum Safe Operating Area
10
1ms
1
Operation in This Area
is Limited by R DS(on)
10 ms
* Notes :
0.1
o
DC
1. TC = 25 C
2. TJ = 150 C
3. Single Pulse
1
40
30
20
10
o
0.01
2
0
25
400
10
100
Drain-Source Voltage, VDS [V]
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
10
0
0.5
10
-1
0.2
PDM
0.1
t1
0.05
10
-2
0.02
0.01
t2
* Notes :
o
1. Zθ JC(t) = 0.48 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)
Single pulse
10
-3
10
-5
10
-4
-3
10
10
-2
-1
10
0
10
10
1
Rectangular Pulse Duration [sec]
FDP2710 Rev. A
4
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FDP2710 250V N-Channel PowerTrench MOSFET
Typical Performance Characteristics (Continued)
FDP2710 250V N-Channel PowerTrench MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP2710 Rev. A
5
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FDP2710 250V N-Channel PowerTrench MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP2710 Rev. A
6
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TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
FDP2710 Rev. A
7
www.fairchildsemi.com
FDP2710 250V N-Channel PowerTrench MOSFET
Mechanical Dimensions
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
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the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FDP2710 Rev. A
8
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FDP2710 250V N-Channel PowerTrench MOSFET
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