ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth™ Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package Symbol 2 LEAD TO-247 JEDEC TO-263AB JEDEC TO-220AC ANODE ANODE CATHODE CATHODE CATHODE (FLANGE) K N/C A ANODE CATHODE (BOTTOM SIDE METAL) CATHODE (FLANGE) Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR Parameter Repetitive Peak Reverse Voltage Ratings 1200 Units V Working Peak Reverse Voltage 1200 V DC Blocking Voltage 1200 V A IF(AV) Average Rectified Forward Current (TC = 92oC) 18 IFRM Repetitive Peak Surge Current (20kHz Square Wave) 36 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A Power Dissipation 125 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 150 °C 300 260 °C °C PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S March 2004 Device Marking R18120G2 Device ISL9R18120G2 Package TO-247 Tape Width N/A Quantity 30 R18120P2 ISL9R18120P2 TO-220AC N/A 50 R18120S3 ISL9R18120S3S TO-263AB 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA Off State Characteristics IR Instantaneous Reverse Current VR = 1200V On State Characteristics VF Instantaneous Forward Voltage IF = 18A TC = 25°C - 2.7 3.3 V TC = 125°C - 2.5 3.1 V VR = 10V, IF = 0A - 69 - pF ns Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 30V - 38 45 IF = 18A, dIF/dt = 100A/µs, VR = 30V - 60 70 ns IF = 18A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C - 300 - ns - 6.5 - A - 950 - nC ns IF = 18A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C IF = 18A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C Maximum di/dt during tb - 400 - - 7.0 - - - 8.0 - A - 2.0 - µC - 235 - ns - 5.2 - - - 22 - A - 2.1 - µC - 370 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.0 °C/W RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W RθJA Thermal Resistance Junction to Ambient TO-220, TO-263 - - 62 °C/W ©2004 Fairchild Semiconductor Corporation TO-247, TO-220, TO-263 ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Package Marking and Ordering Information 30 1000 150oC IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 25 20 15 150oC 125oC 10 100oC 5 100 125oC 100oC 10 75oC 1 25oC 0.1 25oC 0 0.25 0.75 1.25 1.75 2.25 2.75 0.01 0.1 3.25 0.2 0.3 Figure 1. Forward Current vs Forward Voltage 600 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VR , REVERSE VOLTAGE (kV) VF, FORWARD VOLTAGE (V) Figure 2. Reverse Current vs Reverse Voltage 600 VR = 780V, TC = 125oC VR = 780V, TC = 125oC tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 500 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 400 300 200 100 6 9 12 15 18 21 IF, FORWARD CURRENT (A) 24 27 200 ta AT IF = 30A, 15A, 7.5A 0 200 0 3 300 100 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 tb AT IF = 30A, 15A, 7.5A 400 30 dIF/dt = 800A/µs 20 dIF/dt = 600A/µs 15 10 5 dIF/dt = 200A/µs 0 3 6 9 12 15 18 21 24 27 30 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2004 Fairchild Semiconductor Corporation 800 1000 1200 1400 Figure 4. ta and tb Curves vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) VR = 780V, TC = 125oC 600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta and tb Curves vs Forward Current 25 400 25 VR = 780V, TC = 125oC IF = 30A IF = 15A IF = 7.5A 20 15 10 5 200 400 600 800 1000 1200 1400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Typical Performance Curves 3600 VR = 780V, TC = 125oC QRR, REVERSE RECOVERED CHARGE (nC) IF = 30A 9 8 7 IF = 15A 6 5 IF = 7.5A 4 3 200 400 600 800 1000 1200 VR = 780V, TC = 125oC 3200 IF = 30A 2800 2400 IF = 15A 2000 1600 IF = 7.5A 1200 800 200 1400 400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 1200 CJ , JUNCTION CAPACITANCE (pF) f = 1MHZ 1000 800 600 400 200 0.1 1 10 1000 100 -8.5 1200 1400 400 IF = 18A, VR = 780V, dIF /dt = 300A/µs -9.0 380 IRM(REC) -9.5 360 -10.0 340 -10.5 320 -11.0 300 -11.5 280 tRR -12.0 260 -12.5 25 50 VR , REVERSE VOLTAGE (V) 75 100 TC, CASE TEMPERATURE Figure 9. Junction Capacitance vs Reverse Voltage IF(AV), AVERAGE FORWARD CURRENT (A) 800 Figure 8. Reverse Recovered Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 0 0.01 600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) tRR , RECOVERY TIMES (ns) S, REVERSE RECOVERY SOFTNESS FACTOR 10 125 240 150 (oC) Figure 10. Reverse Recovery Current and Times vs Case Temperature 20 15 10 5 0 80 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (oC) Figure 11. DC Current Derating Curve ©2004 Fairchild Semiconductor Corporation ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJA, NORMALIZED THERMAL IMPEDANCE 1.0 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 15. Avalanche Energy Test Circuit ©2004 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Typical Performance Curves (Continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9