LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMC SMC A B DIM. MIN. MAX. A 6.60 7.11 B 5.59 6.22 C 2.92 3.18 D 0.15 0.31 E 7.75 8.13 F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 C MECHANICAL DATA G Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams H D F E All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS SYMBOL VALUE UNIT Non-repetitive peak impulse current @ 10/1000us IPP 100 A Non-repetitive peak On-state current @ 8.3ms (one half cycle) ITSM 50 A Junction temperature range TJ -40 to +150 ℃ storage temperature range TSTG -55 to +150 ℃ SYMBOL VALUE UNIT Junction to leads Rth(J-L) 20 ℃/W Junction to ambient on print circuit (on recommended pad layout) Rth(J-A) 100 ℃/W △VBR/△TJ 0.1 %/℃ THERMAL RESISTANCE CHARACTERISTICS Typical positive temperature coefficient for brekdown voltage WAVEFORM STANDARD IPP (A) 2/10 us GR-1089-CORE 500 8/20 us IEC 61000-4-5 400 10/160 us FCC Part 68 250 10/700 us ITU-T K20/21 200 10/560 us FCC Part 68 160 10/1000 us GR-1089-CORE 100 IPP, PEAK PULSE CURRENT (%) MAXIMUM RATED SURGE WAVEFORM 100 Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value Half value 50 0 tr tp TIME REV. 0, 03-Dec-2001, KSWC02 ELECTRICAL CHARACTERISTICS @ TA= 25℃ unless otherwise specified TC0640H thru TC3500H PARAMETER RATED REPETITIVE OFF-STATE VOLTAGE OFF-STATE LEAKAGE CURRENT @ VDRM BREAKOVER VOLTAGE ON-STATE VOLTAGE @ IT=1.0A SYMBOL VDRM IDRM VBO UNITS Volts uA LIMIT Max TC0640H BREAKOVER CURRENT HOLDING CURRENT VT IBO- IBO+ IH- IH+ Co Volts Volts mA mA mA mA pF Max Max Max Min Max Min Max Typ 58 5 77 3.5 50 800 150 800 200 TC0720H 65 5 88 3.5 50 800 150 800 200 TC0900H 75 5 98 3.5 50 800 150 800 200 TC1100H 90 5 130 3.5 50 800 150 800 120 TC1300H 120 5 160 3.5 50 800 150 800 120 TC1500H 140 5 180 3.5 50 800 150 800 120 TC1800H 160 5 220 3.5 50 800 150 800 120 TC2300H 190 5 265 3.5 50 800 150 800 80 TC2600H 220 5 300 3.5 50 800 150 800 80 TC3100H 275 5 350 3.5 50 800 150 800 80 TC3500H 320 5 400 3.5 50 800 150 800 80 SYMBOL I PARAMETER VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current IPP IBO IH IBR VBO IBO Breakover voltage IDRM V Breakover current VT IH Holding current VT On state voltage IPP Peak pulse current CO Off state capacitance OFF-STATE CAPACITANCE VBR VDRM VBO Note: 1 Note: 2 REV. 0, 03-Dec-2001, KSWC02 NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias. RATING AND CHARACTERISTICS CURVES TC0640H thru TC3500H FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 1.20 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF STATE CURRENT (uA) 100 10 1.0 VDRM=50V 0.1 0.01 0.001 -25 0 25 50 75 100 125 1.15 1.10 VBR (TJ) VBR (TJ=25℃) 1.05 1.0 0.95 0.90 -50 150 -25 TJ, JUNCTION TEMPERATURE (℃) 75 100 125 150 175 FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE 1.10 100 I(T), ON STATE CURRENT NORMALIZED BREAKOVER VOLTAGE 50 25 TJ, JUNCTION TEMPERATURE (℃) FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE VBO (TJ) 1.05 VBO (TJ=25℃) 1.0 0.95 -50 0 -25 0 25 50 75 100 125 150 TJ=25℃ 10 1.0 175 1.0 TJ, JUNCTION TEMPERATURE (℃) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V (T); ON STATE VOLTAGE FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS 1 1.4 1.2 NORMALIZE CAPACITANCE NORMALIZED HOLDING CURRENT 1.3 1.1 1 0.9 0.8 IH (TJ) 0.7 IH (TJ=25℃) 0.6 CO(VR) Tj =25℃ f=1MHz VRMS = 1V CO(VR = 1V) 0.5 0.4 0.3 0.1 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE (℃) 100 125 1 10 100 VR, REVERSE VOLTAGE REV. 0, 03-Dec-2001, KSWC02 TYPICAL CIRCUIT APPLICATIONS TC0640H thru TC3500H FUSE RING TELECOM EQUIPMENT TSPD 1 E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT TSPD 2 E.G. ISDN TIP PTC RING PTC TSPD 2 TELECOM EQUIPMENT TSPD 1 TSPD 3 TIP E.G. LINE CARD PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device REV. 0, 03-Dec-2001, KSWC02