FKN08PN40 tm TRIAC (Silicon Bidirectional Thyristor) Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 3 2 1: T1 2: Gate 3: T2 1 TO-92 1 2 3 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value VDRM VRRM Peak Repetitive Off-State Voltage IT (RMS) RMS On-State Current Commercial frequency, sine full wave 360° conduction, Tc= 70 ℃ ITSM Surge On-State Current Sinewave 1 full cycle, peak value, non-repetitive Rating Units 400 V 0.8 A 50Hz 8 A 60Hz 9 A 0.33 A 2s 5 W 0.1 W Sine Wave 50 to 60Hz, Gate Open I2 t I2t for Fusing PGM Peak Gate Power Dissipation PG (AV) Average Gate Power Dissipation VGM Peak Gate Voltage 5 V IGM Peak Gate Current 1 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Value Units 40 °C/W 160 °C/W Value corresponding to 1 cycle of halfwave, surge on-state current, tp=8.4ms Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case (note1) Thermal Resistance, Junction to Ambient (note2) Note1: Infinite cooling condition. Note2: JESD51-10 ( Test Borad: FR4 3.0”*4.5”*0.062”, Minimum land pad) ©2006 Fairchild Semiconductor Corporation FKN08PN40 Rev. A 1 www.fairchildsemi.com FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) August 2006 Symbol TC = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units IDRM IRRM Repetieive Peak Off-State Current VDRM/VRRM applied - - 100 µA VTM On-State Voltage TC=25°C, ITM=1.12A Instantaneous measurement - - 1.8 V T2(+), Gate (+) - - 2.0 V VGT Gate Trigger Voltage T2(+), Gate (-) - - 2.0 V III T2(-), Gate (-) - - 2.0 V I T2(+), Gate (+) - - 5 mA T2(+), Gate (-) - - 5 mA T2(-), Gate (-) - - 5 mA TJ=125°C, VD=1/2VDRM 0.2 - - V VD = 12V, ITM = 200mA - - 15 mA VD = 12V, IG = 10mA - - 15 mA - - 20 mA 20 - - V/µs 3.0 - - V/µs I II Gate Trigger Current IGT II VD=12V, RL=100Ω VD=12V, RL=100Ω III VGD Gate Non-Trigger Voltage IH Holding Current IL Latching Current (I, II,III) I, III II dv/dt(s) Critical Rate of Rise of Off-State Voltag VDRM = 63% Rated, Tj = 125°C, Exponential Rise dv/dt(c) Critical-Rate of Rise of Off-State Commutating Voltage (di/dt=-0.7A/mS) Commutation dv/dt Test VDRM (V) FKN08PN40 Commutating voltage and current waveforms (inductive load) Test Condition 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-state voltage VD = 200V Supply Voltage (di/dt)C Main Current Time Time Main Voltage (dv/dt)C 2 FKN08PN40 Rev. A Time VD www.fairchildsemi.com FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Electrical Characteristics FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Quadrant Definitions for a Triac T2 Positive + (+) T2 Quadrant II (+) T2 (-) IGT GATE Quadrant I (+) IGT GATE T1 T1 IGT - + IGT (-) T2 Quadrant III (-) T2 (-) IGT GATE (+) IGT GATE T1 Quadrant IV T1 T2 Negative Package Marking and Ordering Information Device Marking Device Package Packing Tape Width Quantity K08PN40 FKN08PN40 TO-92 Bulk -- -- 3 FKN08PN40 Rev. A www.fairchildsemi.com Figure 2. Power Dissipation PAV[W], Maximum Average Power Dissipation ITM[A], On-State Current Figure 1. On-State Characteristics o TJ=125 C o TJ=25 C 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VTM[V], On-State Voltage DC o 180 0.8 o 120 0.6 o 90 0.4 o 60 o 30 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 ITRMS[A], On-State Current 6 o 120 IGT[mA], Gate Trigger Current 30 o 60 110 o 90 100 o 120 o 180 90 DC 80 70 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 5 4 Q3 3 Q2 2 Q1 1 0 -40 1.0 80 120 Figure6. Typical Latching Currrent vs Junction Temperature 1.0 VGT[mA], Gate Trigger Voltage 6 0.9 0.8 0.7 Q3 Q1 0.6 Q2 0.5 0 40 80 4 Q3 2 Q1 0 -40 120 0 40 80 120 o TJ[ C], Junction Temperature o TJ[ C], Junction Temperature 4 FKN08PN40 Rev. A 40 o ITRMS[A], On-State Current 0.4 -40 0 TJ[ C], Junction Temperature Figure5. Typical Gate Voltage vs Junction Temperarure VGT[mA], Gate Trigger Voltage 1.0 Figure 4. Typical Gate Trigger Current vs Junction Temperature o Maximum Allowable Case Temperature, TC[ C] Figure 3. RMS Current Rating 1.2 www.fairchildsemi.com FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics Figure7. Typical Holding Current vs Junction Temperature Figure8. Junction to Case Thermal Resistance 50 IH[mA],Holding Current o Junction to Case Thermal Resistance, [ C/W] 5 4 3 Q3 2 Q1 1 0 -40 Q2 0 40 80 120 o TJ[ C], Junction Temperature 30 20 10 0 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Time, [S] 5 FKN08PN40 Rev. A 40 www.fairchildsemi.com FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Typical Performance Characteristics (Continued) FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) Package Dimension TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] (0.25) +0.10 0.38 –0.05 0.38 –0.05 ±0.20 3.86MAX 3.60 1.02 ±0.10 +0.10 1.27TYP [1.27 ±0.20] (R2.29) 6 FKN08PN40 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 7 FKN08PN40 Rev. A www.fairchildsemi.com FKN08PN40 TRIAC (Silicon Bidirectional Thyristor) TRADEMARKS