FAIRCHILD FJNS7565

FJNS7565
FJNS7565
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
TO-92Mini
1
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
15
Units
V
VCEO
VEBO
Collector-Emitter Voltage
10
V
Emitter-Base Voltage
7
V
IC
Collector Current
5
A
PC
Collector Dissipation
0.55
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Voltage
Test Condition
IC = 10µA, IE = 0
Min.
15
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Voltage
IC = 1mA, IB = 0
10
V
BVEBO
Emitter Base Voltage
IC = 10µA, IC = 0
7
V
ICBO
Collector Cut-off Current
VCB = 15V, IE = 0
100
nA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
100
nA
hFE1
hFE2
hFE3
DC Current Gain
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2A
VCE = 2V, IC = 5A
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 60mA
0.45
VBE (sat)
Base-Emitter Saturation Voltage
IC = 3A, IB = 60mA
1.5
Cob
Collector Output Capacitance
VCB = 20V, IE = 0, f = 1MHz
©2003 Fairchild Semiconductor Corporation
450
300
150
800
20
V
V
pF
Rev. B, May 2003
FJNS7565
Typical Characteristics
14
1000
0
Ta= 125 C
12
Ta= 25 C
10
IB=60mA
8
IB=40mA
6
IB=20mA
4
0
Ta= -40 C
hFE, DCC CURRENT GAIN
IC[A], COLLECTOR CURRENT
VCE=2V
0
100
2
0
0
2
4
6
8
10
0.1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
IC=50IB
VBE(SAT)[V], SATURATION VOLTAGE
VCE(SAT)[V], SATURATION VOLTAGE
IC=50IB
0
Ta= 125 C
0
Ta= 25 C
0
Ta= -40 C
0.01
0.1
1
10
Figure 2. DC Current Gain
1
0.1
1
IC[A], COLLECTOR CURRENT
0
Ta= -40 C
1
0.1
0.1
10
0
Ta= 125 C
0
Ta= 25 C
IC[A], COLLECTOR CURRENT
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
12
Figure 4. Base-Emitter Saturation Voltage
80
IE=0,f=1MHZ
VCE=2V
COB[pF], OUTPUT CAPACITANCE
IC[A], COLLECTOR CURRENT
10
60
8
6
40
0
Ta= 125 C
4
0
Ta= 25 C
0
Ta= -40 C
20
2
0
0.2
0.4
0.6
0.8
1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2003 Fairchild Semiconductor Corporation
1.2
0
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 6. Collector Output Capacitance
Rev. B, May 2003
FJNS7565
Package Dimensions
TO-92Mini
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2