FAIRCHILD MPSA12_02

MPSA12
MPSA12
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
VCES
Parameter
Collector-Emitter Voltage
Value
20
Units
V
VCBO
VEBO
Collector-Base Voltage
20
V
Emitter-Base Voltage
10
IC
Collector Current
V
1.2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
100
nA
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100µA, IE = 0
ICBO
Collector Cutoff Current
VCB = 15V, IE = 0
20
V
ICES
Emitter Cutoff Current
VCB = 15V, IC = 0
100
nA
IEBO
Emitter Cutoff Current
VEB = 10V, IC = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE = 5.0V, IC = 10mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.01mA
1.0
V
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 5.0V
1.4
V
20,000
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
PD
Total Device Dissipation
Derate above 25°C
Parameter
Max.
625
5.0
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
MPSA12
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1