10V Drive Nch MOSFET R5011FNX zDimensions (Unit : mm) zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Fast reverse recovery time. 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 12.0 2.8 0.8 (1) Gate 2.54 (2) Drain 2.54 0.75 2.6 (1) (2) (3) (3) Source zApplications Switching zInner circuit zPackaging specifications Type Package Bulk Basic ordering unit (pieces) 500 ∗1 R5011FNX (1) ∗1 Body Diode (2) (3) (1) Gate (2) Drain (3) Source zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VDSS 500 V Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) ±30 V ∗3 ±11 A ∗1 ±44 A 11 A ∗1 44 A 5.5 A 8.1 mJ 50 W VGSS Continuous ID Pulsed IDP Continuous IS Pulsed ISP ∗3 Avalanche current IAS ∗2 ∗2 Avalanche energy EAS Total power dissipation (Tc=25°C) PD Channel temperature Tch 150 °C Tstg −55 to +150 °C Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed zThermal resistance Parameter Channel to case Symbol Limits Unit Rth(ch-c) 2.5 °C/W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/5 2009.03 - Rev.A Data Sheet R5011FNX zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V IDSS − − 100 µA VDS=500V, VGS=0V VGS(th) 2.0 − 4.0 V VDS=10V, ID=1mA − Symbol Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance RDS(on) Forward transfer admittance | Yfs | ∗ ∗ Conditions 0.40 0.52 Ω ID=5.5A, VGS=10V 4.5 − − S VDS=10V, ID=5.5A Input capacitance Ciss − 950 − pF VDS=25V Output capacitance Coss − 580 − pF VGS=0V Reverse transfer capacitance Crss pF f=1MHz − 30 − ∗ − 26 − ns VDD 250V, ID=5.5A ∗ − 28 − ns VGS=10V td(off) ∗ − 75 − ns RL=45.5Ω tf ∗ − 30 − ns RG=10Ω Total gate charge Qg ∗ − 30 − nC Gate-source charge Qgs ∗ − 7 − nC Gate-drain charge Qgd ∗ − 12 − nC VDD 250V ID=11A VGS=10V RL=22.7Ω / RG=10Ω Turn-on delay time td(on) Rise time Turn-off delay time tr Fall time ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Forward recovery time Symbol VSD ∗ trr ∗ Min. Typ. Max. − 55 − 85 1.5 115 Unit V ns Conditions IS= 11A, VGS=0V IF= 11A, di/dt=100A/µs ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/5 2009.03 - Rev.A Data Sheet R5011FNX zElectrical characteristic curves 10 1 Operation in this area is limited PW = 1ms Tc = 25°C DC operation Single Pulse 0.1 1 10 100 8.0V 15 6.5 10 5.5V 5.0V 5 0.1 0.01 0.001 0.0 1.5 3.0 4.5 6.0 0.8 0.7 ID= 11.0A 0.6 0.5 0.4 ID= 5.5A 0.3 0.2 0.1 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 10 20 30 40 VGS= 4.5V 0 50 1 5 3 2 1 50 100 150 5 Fig.3: Typical output VGS= 10V Pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS= 10V Pulsed 1 0.8 ID= 11.0A 0.6 0.4 ID= 5.5A 0.2 0 -50 4 0.01 0 1.4 1.2 3 10 VDS= 10V ID= 1mA 4 0 -50 2 DRAIN-SOURCE VOLTAGE: VDS (V) CHANNEL TEMPERATURE: Tch (°C) Fig.5 Gate Threshold Voltage vs. Channel Temperature STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed 5.0V 2 6 GATE-SOURCE VOLTAGE : VGS (V) 1 6.0V Fig.2: Typical output characteristics(Ⅰ) Fig.4 Typical Transfer Characteristics 0.9 6.5V 4 DRAIN-SOURCE VOLTAGE: VDS (V) GATE THRESHOLD VOLTAGE: VGS(th) (V) DRAIN CURRENT : ID (A) Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 5.5V 0 0 Fig.1 Maximum Safe Operating Aera 10 8.0V 7.0V 6 0 1000 VDS= 10V Pulsed 10V VGS= 4.5V DRAIN-SOURCE VOLTAGE : VDS ( V ) 100 6.0V 7.0V Ta= 25°C Pulsed 8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.01 10 10V 0 50 100 150 CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 3/5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.1 Ta= 25°C Pulsed DRAIN CURRENT: ID (A) 20 PW = 100us DRAIN CURRENT: ID (A) DRAIN CURRENT : ID (A) 100 VDS= 10V Pulsed 10 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current 2009.03 - Rev.A Data Sheet 10000 VGS= 0V Pulsed 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 Coss Crss 100 Ta= 25°C f= 1MHz VGS= 0V 10 1 0.5 1 0.01 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10 Ta= 25°C VDD= 250V ID= 11.0A RG= 10Ω Pulsed 5 0 0 10 20 30 40 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics 10000 1000 Ta= 25°C di/dt= 100A/µs VGS= 0V Pulsed SWITCHING TIME : t (ns) REVERSE RECOVERY TIME: trr (ns) Ciss 1000 0.01 0 100 Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed 1000 tf 100 td(off) 10 tr td(on) 1 10 0.1 1 10 0.1 100 REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 15 GATE-SOURCE VOLTAGE : VGS (V) 100 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) R5011FNX 1 10 100 DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics 10 1 Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 50.4°C/W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/5 2009.03 - Rev.A Data Sheet R5011FNX zSwitching characteristics measurement circuit Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms IG(Const.) Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche measurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.3-2 Avalanche waveform 5/5 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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