CYSTEKEC BTC4620D3 High voltage npn epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C210D3
Issued Date : 2004.09.01
Revised Date : 2005.04.20
Page No. : 1/4
High Voltage NPN Epitaxial Planar Transistor
BTC4620D3
Features
• High breakdown voltage. (BVCEO =350V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1776D3
• Pb-free package
Symbol
Outline
BTC4620D3
TO-126ML
B:Base
C:Collector
E:Emitter
EC B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
BTC4620D3
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC
ICP
350
350
5
100
200
1.2
7
150
-55~+150
V
V
V
PD
Tj
Tstg
mA
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210D3
Issued Date : 2004.09.01
Revised Date : 2005.04.20
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
350
350
5
40
-
Typ.
0.1
70
2.6
Max.
0.1
0.1
0.6
1
320
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=200V, IE=0
VEB=4V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=30V, IC=10mA, f=10MHz
VCB=30V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTC4620D3
C
40~80
D
60~120
E
100~200
F
160~320
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210D3
Issued Date : 2004.09.01
Revised Date : 2005.04.20
Page No. : 3/4
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
VCE = 10V
VCE = 5V
10
VCE = 1V
1000
VCE(SAT) @ IC = 20IB
100
VCE(SAT) @ IC = 10IB
10
1
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
1.6
Power Dissipation---PD(W)
Saturation Voltage---(mV)
1000
VBE(SAT) @ IC =10IB
100
1.2
0.8
0.4
0
1
10
100
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(W)
10
8
6
4
2
0
0
BTC4620D3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
Spec. No. : C210D3
Issued Date : 2004.09.01
Revised Date : 2005.04.20
Page No. : 4/4
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
C4620
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
CYStek Package Code: D3
*: Typical
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1220
0.1299
0.1181
0.1260
0.0737
0.0837
0.0294
0.0494
DIM
A
B
C
D
Φ1
Φ2
F
G
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
3.10
3.30
3.00
3.20
1.87
2.12
0.74
1.25
DIM
H
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0462
0.0562
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
1.17
1.42
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4620D3
CYStek Product Specification
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