BCD APT13003SZTR-G1 High voltage fast switching npn power transistor Datasheet

Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
General Description
Features
The APT13003S series are high voltage, high speed
switching transistors specially designed for off-line
switch mode power supplies with low output power.
·
·
·
·
The APT13003S series are available in TO-92 and TO126 packages.
APT13003S
High Switching Speed
High Collector-Emitter Voltage
Low Cost
Bulk and Ammo Packing TO-92 Package and
TO-126 Package
Applications
·
·
TO-92
(Bulk Packing)
Battery Chargers for Mobile Phone
Standby Power Supply
TO-92
(Ammo Packing)
TO-126
Figure 1. Package Types of APT13003S
Pin Configuration
Z Package
(TO-92(Bulk Packing))
Base
3
Base
2 Collector
2
Collector
1 Emitter
1
Emitter
3
U Package
(TO-126)
Z Package
(TO-92(Ammo Packing))
(Top View)
3
Emitter
2
Collector
1
Base
(Front View)
Figure 2. Pin Configurations of APT13003S
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
Ordering Information
APT13003
E1: Lead Free
G1: Green
TR: Ammo
Blank: Bulk
Package
Z: TO-92
U: TO-126
Circuit Type
S: APT13003S
Part Number
Package
Lead Free
Green
Lead Free
APT13003SZ-G1
TO-92
TO-126
Marking ID
APT13003SZTR-G1
APT13003SU-E1
APT13003SU-G1
EU13003S
Green
Packing Type
13003SZ-G1
Bulk
13003SZ-G1
Ammo
GU13003S
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage (VBE=0)
VCES
700
V
Collector-Emitter Voltage (IB=0)
VCEO
450
V
Emitter-Base Voltage (IC=0)
VEBO
9
V
IC
1.3
A
ICM
2.6
A
IB
0.65
A
IBM
1.3
A
Collector Current
Collector Peak Current (Pulse) (Note 2)
Base Current
Base Peak Current (Pulse) (Note 2)
Power Dissipation, TA=25oC
For TO-92
PTOT
1.1
W
Power Dissipation, TC=25oC
For TO-126
PTOT
20
W
TJ
150
o
TSTG
-55 to 150
o
Operating Junction Temperature
Storage Temperature Range
C
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%.
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
Thermal Characteristics
Parameter
Symbol
For TO-92
Thermal Resistance (Junction-to-Case)
For TO-92
oC/W
6.25
113.6
θJA
For TO-126
Unit
83.3
θJC
For TO-126
Thermal Resistance (Junction-to-Ambient)
Value
oC/W
96
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Symbol
Conditions
ICEV
VCE=700V
Collector-Emitter Sustaining
Voltage
VCEO (sus)
IC=100μA
Collector-Emitter Saturation
Voltage (Note 3)
VCE (sat)
Base-Emitter Saturation Voltage
(Note 3)
VBE (sat)
DC Current Gain (Note 3)
hFE
Current Gain Bandwidth Product
fT
Turn-on Time with Resistive Load
ton
Storage Time with Resistive Load
ts
Fall Time with Resistive Load
tf
Min
Typ
Max
Unit
10
μA
450
V
IC=0.5A, IB=0.1A
0.3
IC=1.0A, IB=0.25A
0.6
IC=0.5A, IB=0.1A
1.0
IC=1.0A, IB=0.25A
1.2
IC=0.5A, VCE=2V
13
30
IC=1.0A, VCE=2V
5
25
VCE=10V, IC=0.1A
4
IC=1A, VCC=125V, IB1=0.2A,
IB2=-0.2A, TP=25μS
V
V
MHz
1.0
3.0
μs
0.5
Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
10
10
1
1
Collector Current IC(A)
Collector Current IC (A)
Typical Performance Characteristics
0.1
DC
0.01
1E-3
1
10
100
1000
DC
0.1
0.01
1E-3
1
10
Collector-Emitter Clamp Voltage V CE (V)
100
1000
Collector-Emitter clamp Voltage VCE(V)
Figure 3. Safe Operating Areas (TO-92 Package)
Figure 4. Safe Operating Areas (TO-126 Package)
2.0
125
1.8
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Collector Current IC(A)
Power Derating Factor(%)
Α
50
25
1.4
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
1.2
IB=200mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
IB=250mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
IB=300mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
75
IB=350mA
Α
Α
Α
Α
1.6
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
100
IB=400mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
IB=150mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
1.0
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
IB=100mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α ΑΑ
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
0.8
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
ΑΑ
Α
Α
Α
Α
Α
Α
0.6
Α
Α
Α
Α
ΑΑ
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
IB=50mA
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
ΑΑ
Α
Α
Α
Α
Α
Α
0.4
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
0.2
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
Α
0
0
Α
Α
Α
Α
Α
0.0
0
Α
Α
Α
25
50
75
100
125
150
175
Α
Α
200
Α
Α
1
2
3
4
5
6
7
Collector-Emitter Voltage VCE(V)
o
Case Temperature( C)
Figure 5. Power Derating Curve
Figure 6. Static Characteristics
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
Typical Performance Characteristics (Continued)
10
40
35
VCE=2V
o
o
TJ=125 C
Collector-Emitter Voltage VCE(V)
TJ=125 C
DC Current Gain
30
25
20
o
TJ=25 C
15
10
5
1
o
TJ=25 C
0.1
hFE=5
0
0.01
0.1
1
0.01
0.1
10
1
10
Collector Current IC(A)
Collector Current IC(A)
Figure 7. DC Current Gain
Figure 8. Collector-Emitter Saturation Voltage
1.2
1.1
Base-Emitter Voltage VBE(V)
o
TJ=25 C
1.0
0.9
o
TJ=125 C
0.8
0.7
0.6
hFE=5
0.5
0.1
1
10
Collector Current IC(A)
Figure 9. Base-Emitter Saturation Voltage
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
Mechanical Dimensions
TO-92 (Bulk Packing)
Unit: mm(inch)
1.000(0. 039)
3.430(0.135)
MIN
3.700(0.146)
3.300(0.130)
1.400(0.055)
0.320(0. 013)
0.510(0. 020)
0. 000(0. 000)
0. 380(0. 015)
Φ1. 600(0. 063)
MAX
4.700(0.185)
1.270(0. 050)
TYP
15.500(0.610)
0.360(0. 014)
0.760(0. 030)
12.500(0.492)
4.300(0.169)
4.400(0.173)
4.800(0.189)
2.420(0. 095)
2.660(0.105)
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
Mechanical Dimensions (Continued)
TO-92 (Ammo Packing)
Unit: mm(inch)
1. 100(0. 043)
3. 430(0.135)
MIN
1.270(0.050)
Typ
2.500(0.098)
4.000 (0.157 )
0. 000(0.000)
0. 380(0.015)
Φ1. 600(0. 063)
MAX
14.500(0.571)
12.500(0.492)
0.320(0. 013)
0. 510(0. 020)
3.800(0.150)
3.300(0.130)
1. 400(0.055)
4.700(0.185)
4.300(0.169)
4.400(0.173)
4.800 (0.189 )
13.000(0. 512)
15.000 (0.591 )
0.380(0.015)
0.550(0.022 )
2.540(0.100)
Typ
Aug. 2011 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003S
Mechanical Dimensions (Continued)
ٛφ 3.100(0.122)
0.000(0.000)
0.300(0.012)
2.400(0.094)
2.900(0.114)
1.060(0.042)
1.500(0.059)
3.900(0.154)
7.400(0.291)
8.200(0.323)
10.600(0.417)
11.200(0.440)
Unit: mm(inch)
3.600(0.142)
TO-126
3.550(0.140)
1.170(0.046)
1.470(0.058)
2.100(0.083)
1.700(0.067)
14.500(0.570)
15.900(0.626)
0.660(0.026)
4.560(0.180)
TYP.
0.860(0.034)
2.280(0.090)
TYP
Aug. 2011 Rev. 1. 2
0.400(0.016)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
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