AOSMD AOL1446L N-channel enhancement mode field effect transistor Datasheet

AOL1446
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1446 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power
conversion. Standard Product AOL1446 is Pb-free
(meets ROHS & Sony 259 specifications).
AOL1446L is a Green Product ordering option.
AOL1446 and AOL1446L are electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7mΩ (VGS = 10V)
RDS(ON) < 11mΩ (VGS = 4.5V)
TM
Ultra SO-8
Top View
Fits SOIC8
footprint !
D
D
Bottom tab
connected to
drain
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
VDS
30
Drain-Source Voltage
VGS
±20
Gate-Source Voltage
Continuous Drain
85
TC=25°C G
B
Current
70
ID
TC=100°C
IDM
200
Pulsed Drain Current
Continuous Drain
TA=25°C
14
G
Current
IDSM
11
TA=70°C
C
Avalanche Current
IAR
30
C
Repetitive avalanche energy L=0.3mH
EAR
135
TC=25°C
100
PD
Power Dissipation B TC=100°C
50
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
A
A
mJ
W
2.5
1.6
-55 to 175
TA=25°C
PDSM
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Power Dissipation
Units
V
V
RθJA
RθJC
Typ
19.5
48
1
W
°C
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
AOL1446
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250μA, VGS=0V
VDS=24V, V GS=0V
30
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON)
Static Drain-Source On-Resistance
gFS
VSD
IS
VGS=4.5V, ID=20A
VDS=5V, ID=20A
Forward Transconductance
Diode Forward Voltage
IS=1A,V GS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
Typ
Max
0.005
1
5
100
3
V
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250μA
VGS=10V, V DS=5V
VGS=10V, ID=20A
1
100
TJ=125°C
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, V DS=15V, R L=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
Units
2.3
μA
nA
V
A
5
6.7
8.4
60
0.72
7
8.1
11
mΩ
1
85
S
V
A
1325
535
155
0.95
1600
26
13.5
3.2
6.6
7.2
12.5
22
6
29.7
29
32
18
1.5
10
18
33
9
36
36
mΩ
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
Rev0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
50
4.0V
50
40
30
ID(A)
ID (A)
40
VDS=5V
3.5V
20
125°C
30
25°C
20
10
10
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
10
1.8
9
VGS=4.5V
Normalized On-Resistance
RDS(ON) (mΩ)
2.5
8
7
6
VGS=10V
5
ID=20A
1.6
VGS=10V
1.4
VGS=4.5V
1.2
1
4
0
10
20
30
40
50
0.8
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
20
100
125
150
175
1.0E+02
125°C
1.0E+01
16
1.0E+00
ID=20A
12
IS (A)
RDS(ON) (mΩ)
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
125°C
8
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=15V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
Ciss
1200
Coss
800
400
0
0
5
10
15
20
25
Crss
0
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
100
10μs
1ms
10
DC
0.1
1
10
100
30
T J(Max)=175°C
T A=25°C
200
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
10
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJC=1.5°C/W
PD
0.1
T on
Single Pulse
0.01
0.00001
25
100
T J(Max)=175°C
T A=25°C
0.1
ZθJc Normalized Transient
Thermal Resistance
20
300
100μs
1
15
400
RDS(ON)
limited
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
1000
5
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOL1446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
T A=25°C
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
60
40
20
0
0.00001
0.0001
0.001
90
60
30
0
0.01
0
25
100
100
80
80
60
40
20
75
100
125
150
175
60
40
20
0
0
25
50
75
100
125
150
0
0.01
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power (W)
Current rating ID(A)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
PD
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=60 °C/W
0.0001
0.001
0.01
T on
0.1
1
T
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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