Z ibo Seno Electronic Engineering Co., Ltd. ER3A – ER3J 3.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE Features ! ! ! ! ! ! ! Glass Passivated Die Construction B Ideally Suited for Automatic Assembly Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 1 0 0A Peak J A C Low Power Loss Super-Fast Recovery Time G H E Plastic Case Material has UL Flammability Classification Rating 94V-O SMB Mechanical Data ! ! ! ! ! ! Case: SMB/DO-214AA,DO-214AB, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: SMB Weight: 0.093 grams (approx.) SMC Weight: 0.20 grams (approx.) Lead Free: For RoHS / Lead Free Version SMC Dim Min Max Min Max A 3.30 3.94 5.59 6.22 B 4.06 4.57 6.60 7.11 C 1.96 2.21 2.75 3.18 D 0.15 0.31 0.15 0.31 E 5.00 5.59 7.75 8.13 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 2.00 2.62 2.00 2.62 J D All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Symbol ER3A ER3B ER3C ER3D ER3E ER3G ER3J Unit VRRM VRWM VR 50 100 150 200 300 400 600 V VR(RMS) 35 70 105 140 210 280 420 V IO 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Forward Voltage @IF = 3.0A VFM @TA = 25°C @TA = 100°C IRM 5.0 500 µA Reverse Recovery Time (Note 1) trr 35 nS Typical Junction Capacitance (Note 2) Cj 45 pF RJL 35 °C/W Tj, TSTG -65 to +150 °C Peak Reverse Current At Rated DC Blocking Voltage @TL = 120°C @TA=25°C unless otherwise specified Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 0.95 1.30 1.7 V Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. ER3A – ER3J 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. ER3A – ER3J IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 4.0 3.0 2.0 1.0 25 50 75 100 125 ER3J 0.1 0.01 0 TT, TERMINAL TEMPERATURE (° C) Fi . 1 Forward Current Deratin Curve 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 120 Tj = 25°C f = 1.0MHz Single Half-Sine-Wave (JEDEC Method) 100 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) ER3E - ER3G ER3A - ER3D 1.0 175 150 Tj = 25°C Pulse width = 300µs 10 80 60 40 10 20 0 1 1 10 1 100 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Surge Current Derating Curve trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit ER3A – ER3J 2 of 2 www.senocn.com Alldatasheet